HEXFET Power MOSFET

PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 100V 11m: 14m: 73A GDS TO-220AB IRFB4610 GDS D2Pak IRFS4610 GDS TO-262 IRFSL4610 Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dV/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 73 52 290 190 1.3 ± 20 7.6 -55 to + 175 300 10lbxin (1.1Nxm) Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f 370 See Fig. 14, 15, 16a, 16b, mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA RθJA Parameter Junction-to-Case j Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 j Junction-to-Ambient (PCB Mount) , D2Pak ij Typ. ––– 0.50 ––– ––– Max. 0.77 ––– 62 40 Units °C/W www.irf.com 1 11/3/04 IRF/B/S/SL4610 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 100 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– 0.085 11 ––– ––– ––– ––– ––– 1.5 ––– ––– 14 4.0 20 250 200 -200 ––– Ω nA V Conditions VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS IGSS RG Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance V/°C Reference to 25°C, ID = 1mAc mΩ VGS = 10V, ID = 44A f V µA VDS = VGS, ID = 100µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Min. Typ. Max. Units 73 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 90 20 36 18 87 53 70 3550 260 150 330 380 ––– 140 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns S nC ID = 44A VDS = 80V VGS = 10V f VDD = 65V ID = 44A RG = 5.6Ω VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz Conditions VDS = 50V, ID = 44A Reverse Transfer Capacitance ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– VGS = 0V, VDS = 0V to 80V h, See Fig.11 VGS = 0V, VDS = 0V to 80V g, See Fig. 5 Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 35 42 44 65 2.1 73 290 1.3 53 63 66 98 ––– A nC V ns A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 44A, VGS = 0V f VR = 85V, TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF = 44A di/dt = 100A/µs f G S D Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.39mH RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use above this value. ƒ ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † Coss eff. (ER) is a fixed capacitance that gives the same energy as ‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom ˆ Rθ is measured at TJ approximately 90°C Coss while VDS is rising from 0 to 80% VDSS. mended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF/B/S/SL4610 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C 10 0.1 1 10 100 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 3.0 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 73A 2.5 ID, Drain-to-Source Current(Α) VGS = 10V 100.0 TJ = 175°C 10.0 2.0 1.5 1.0 TJ = 25°C VDS = 25V 1.0 ≤ 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 6000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Fig 4. Normalized On-Resistance vs. Temperature 20 VGS, Gate-to-Source Voltage (V) ID= 44A VDS = 80V VDS= 50V VDS= 20V 5000 16 C, Capacitance (pF) 4000 Ciss 12 3000 8 2000 4 1000 Coss Crss 1 10 100 0 0 0 20 40 60 80 100 120 140 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRF/B/S/SL4610 1000.0 1000 ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100µsec ISD , Reverse Drain Current (A) 100.0 TJ = 175°C 100 10.0 10 1msec 10msec Tc = 25°C Tj = 175°C Single Pulse TJ = 25°C 1.0 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 DC 10 100 1000 0.1 1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 80 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage 125 ID , Drain Current (A) 60 120 115 40 110 20 105 0 25 50 75 100 125 150 175 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 2.0 Fig 10. Drain-to-Source Breakdown Voltage 1600 EAS, Single Pulse Avalanche Energy (mJ) 1.5 1200 ID 4.6A 6.3A BOTTOM 44A TOP Energy (µJ) 1.0 800 0.5 400 0.0 0 20 40 60 80 100 0 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C) Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent 4 www.irf.com IRF/B/S/SL4610 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 0.01 0.01 τJ Ri (°C/W) τi (sec) 0.4367 0.001016 0.3337 0.009383 τ1 0.001 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 10 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 400 EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 44A 200 100 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRF/B/S/SL4610 5.0 16 VGS(th) Gate threshold Voltage (V) 4.0 ID = 1.0A ID = 1.0mA ID = 250µA ID = 100µA IRRM - (A) 12 3.0 8 2.0 4 IF = 29A VR = 85V TJ = 125°C TJ = 25°C 100 200 300 400 500 600 700 800 900 1000 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 0 TJ , Temperature ( °C ) dif / dt - (A / µs) Fig 16. Threshold Voltage Vs. Temperature 16 Fig. 17 - Typical Recovery Current vs. dif/dt 300 12 200 8 QRR - (nC) 100 IRRM - (A) 4 IF = 44A VR = 85V TJ = 125°C TJ = 25°C IF = 29A VR