HEXFET Power MOSFET

PD - 96902A IRFB4410 IRFS4410 IRFSL4410 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G S HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID 100V 8.0m: 10m: 96A G DS TO-220AB IRFB4410 G DS D2Pak IRFS4410 G DS TO-262 IRFSL4410 Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy g Max. 96c 68c 380 250 1.6 ± 20 19 -55 to + 175 300 10lbxin (1.1Nxm) 220 See Fig. 14, 15, 16a, 16b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA RθJA Parameter Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D Pak jk 2 Typ. ––– 0.50 ––– ––– Max. 0.61 ––– 62 40 Units °C/W www.irf.com 1 11/4/04 IRFB4410/IRFS4410/IRFSL4410 Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS RG Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance Min. Typ. Max. Units 100 ––– ––– 2.0 ––– ––– ––– ––– ––– ––– ––– 0.094 ––– 8.0 10 ––– 4.0 ––– 20 ––– 250 ––– 200 ––– -200 1.5 ––– Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mAd mΩ VGS = 10V, ID = 58A g V VDS = VGS, ID = 150µA µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω f = 1MHz, open drain Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)h Min. Typ. Max. Units 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 120 31 44 24 80 55 50 5150 360 190 420 500 ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– S nC Conditions VDS = 50V, ID = 58A ID = 58A VDS = 80V VGS = 10V g VDD = 65V ID = 58A RG = 4.1Ω VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V i, See Fig.11 VGS = 0V, VDS = 0V to 80V h, See Fig. 5 ns pF Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– 96c 380 A A Conditions MOSFET symbol showing the integral reverse G D S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 58A, VGS = 0V g VR = 85V, ––– 38 56 ns TJ = 25°C TJ = 125°C IF = 58A ––– 51 77 di/dt = 100A/µs g ––– 61 92 nC TJ = 25°C TJ = 125°C ––– 110 170 ––– 2.8 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ = 25°C, L = 0.14mH RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use above this value. „ ISD ≤ 58A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. … Pulse width ≤ 400µs; duty cycle ≤ 2%. † Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. ‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Coss while VDS is rising from 0 to 80% VDSS. ‰ Rθ is measured at TJ approximately 90°C. 2 www.irf.com IRFB4410/IRFS4410/IRFSL4410 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 1000 TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 10 10 4.5V 1 4.5V ≤60µs PULSE WIDTH 0.1 0.1 1 Tj = 25°C 10 1 100 1000 0.1 1 ≤60µs PULSE WIDTH Tj = 175°C 10 100 1000 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 3.0 Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) 100 T J = 175°C 10 T J = 25°C 1 VDS = 25V ≤60µs PULSE WIDTH 0.1 2 3 4 5 6 7 8 9 10 2.5 ID = 58A VGS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics 100000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 4. Normalized On-Resistance vs. Temperature 12.0 ID= 58A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 80V VDS= 50V VDS= 20V C, Capacitance(pF) 10000 Ciss 1000 Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100 0 20 40 60 80 100 120 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRFB4410/IRFS4410/IRFSL4410 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 1msec 100 T J = 175°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10msec 10 DC Tc = 25°C Tj = 175°C Single Pulse 1 0 1 10 100 1000 10 T J = 25°C VGS = 0V 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100 90 80 ID, Drain Current (A) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 130 Fig 8. Maximum Safe Operating Area Limited By Package 125 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 120 115 110 105 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature 2.0 EAS , Single Pulse Avalanche Energy (mJ) Fig 10. Drain-to-Source Breakdown Voltage 900 800 700 600 500 400 300 200 100 0 1.5 Energy (µJ) ID 6.7A 9.7A BOTTOM 58A TOP 1.0 0.5 0.0 0 20 40 60 80 100 120 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C) 4 Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com IRFB4410/IRFS4410/IRFSL4410 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 Ri (°C/W) τi (sec) 0.2736 0.000376 0.3376 0.004143 τ1 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E-005 0.0001 0.001 0.01 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 250 EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 58A 150 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRFB4410/IRFS4410/IRFSL4410 5.0 20 VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 15 IRRM (A) ID ID ID ID = 150µA = 250µA = 1.0mA = 1.0A 10 5 IF = 19A VR = 85V TJ = 25°C _____ TJ = 125°C ---------- 0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/µs