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Part Number |
IRF9956PBF |
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Manufacturer |
International Rectifier |
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Semiconductor DataSheet |
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DataSheet View |
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PD - 95259
IRF9956PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
1 8 7
D1 D1 D2 D2
2
VDSS = 30V RDS(on) = 0.10Ω
3
6
4
5
Top View
Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Description
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
TA = 25°C TA = 70°C
Maximum
Units
V
Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation
TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
30 ± 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150
A
W mJ A mJ V/ ns °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
62.5
Units
°C/W 09/21/04
IRF9956PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 30 1.0
Typ. 0.015 0.06 0.09 12 6.9 1.0 1.8 6.2 8.8 13 3.0 190 120 61
Max. Units Conditions V V GS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA 0.10 V GS = 10V, ID = 2.2A Ω 0.20 V GS = 4.5V, ID = 1.0A V V DS = V GS, ID = 250µA S V DS = 15V, ID = 3.5A 2.0 V DS = 24V, VGS = 0V µA 25 V DS = 24V, VGS = 0V, TJ = 125°C 100 V GS = 24V nA -100 V GS = -24V 14 I D = 1.8A 2.0 nC V DS = 10V 3.5 V GS = 10V, See Fig. 10 12 V DD = 10V 18 I D = 1.0A ns 26 R G = 6.0Ω 6.0 R D = 10Ω V GS = 0V pF V DS = 15V = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 1.7 A 16 1.2 53 57 V ns nC 0.82 27 28
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.25A, VGS = 0V TJ = 25°C, IF = 1.25A di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by Starting TJ = 25°C, L = 22mH
RG = 25Ω, IAS = 2.0A.
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
IRF9956PbF
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
100
I D , Drain-to-Source Current (A)
10
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
3.0V 20µs PULSE WIDTH TJ = 25°C A
0.1 1 10
3.0V 20µs PULSE WIDTH TJ = 150°C A
0.1 1 10
1
1
V DS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
I D , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
10
10
TJ = 25°C TJ = 150°C
TJ = 150°C TJ = 25°C
1
1 3.0 3.5 4.0 4.5
V DS = 10V 20µs PULSE WIDTH
5.0 5.5 6.0
A
0.1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
1.4
VGS , Gate-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
IRF9956PbF
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 2.2A
RDS (on) , Drain-to-Source On Resistance (Ω)
2.0
0.12
1.5
0.10
VGS = 4.5V
1.0
0.08
0.5
VGS = 10V
0.06
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
0.04 0 2 4 6 8 10 12
A
TJ , Junction Temperature ( °C)
I D , Drain Current (A)
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain Current
RDS (on) , Drain-to-Source On Resistance (Ω)
E AS , Single Pulse Avalanche Energy (mJ)
0.16
100
TOP
80
0.14
BOTTOM
ID 0.89A 1.6A 2.0A
0.12
0.10
60
0.08
I D = 3.5A
0.06
40
0.04
20
0.02
0.00 0 3 6 9 12 15
A
0 25 50 75 100 125
A
150
V GS , Gate-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 7. Typical On-Resistance Vs. Gate Voltage
Fig 8. Maximum Avalanche Energy Vs. Drain Current
IRF9956PbF
350
300
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
ID = 1.8A VDS = 10V
16
C, Capacitance (pF)
250
Ciss Coss
200
12
150
8
100
Crss
4
50
0 1 10 100
A
0
0
2
4
6
8
10
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100
0.1 0.00001
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9956PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0° .2440 .0196 .050 8°
1.27 BASIC 0.635 B ASIC 5.80 0.25 0.40 0° 6.20 0.50 1.27 8°
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45°
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
F OOTPRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
IRF9956PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
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