IRF9952PBF (International Rectifier)

Part Number	IRF9952PBF
Manufacturer	International Rectifier
Semiconductor DataSheet
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PD - 95135 IRF9952PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V 3 6 4 5 P-CHANNEL MOSFET Top View RDS(on) 0.10Ω 0.25Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 SO-8 Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C V DS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG N-Channel Maximum P-Channel 30 ± 20 -2.3 -1.8 -10 -1.3 2.0 1.3 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range 3.5 2.8 16 1.7 A W 57 -1.3 mJ A mJ V/ ns 44 2.0 0.25 5.0 -5.0 -55 to + 150 °C Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RθJA Limit 62.5 Units °C/W www.irf.com 1 09/15/04 IRF9952PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 Typ. Max. 0.015 0.015 0.08 0.10 0.12 0.15 0.165 0.250 0.290 0.400 12 2.4 2.0 -2.0 25 -25 ±100 6.9 14 6.1 12 1.0 2.0 1.7 3.4 1.8 3.5 1.1 2.2 6.2 12 9.7 19 8.8 18 14 28 13 26 20 40 3.0 6.0 6.9 14 190 190 120 110 61 54 Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.2A VGS = 4.5V, ID = 1.0A VGS = -10V, ID = -1.0A VGS = -4.5V, ID = -0.50A VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 3.5A VDS = -15V, I D = -2.3A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, V GS = 0V, TJ = 125°C VDS = -24V, VGS = 0V, TJ = 125°C VGS = ±20V N-Channel I D = 1.8A, VDS = 10V, VGS = 10V P-Channel I D = -2.3A, V DS = -10V, VGS = -10V N-Channel VDD = 10V, ID = 1.0A, R G = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, RD = 10Ω N-Channel V GS = 0V, VDS = 15V, = 1.0MHz P-Channel V GS = 0V, VDS = -15V, = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 1.7 -1.3 A 16 16 0.82 1.2 TJ = 25°C, IS = 1.25A, V GS = 0V V -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V 27 53 N-Channel ns 27 54 TJ = 25°C, IF =1.25A, di/dt = 100A/µs 28 57 P-Channel nC TJ = 25°C, IF = -1.25A, di/dt = 100A/µs 31 62 Repetitive rating; pulse width limited by Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 23 ) Surface mounted on FR-4 board, t ≤ 10sec. N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. 2 www.irf.com N-Channel 100 IRF9952PbF VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 10 3.0V 20µs PULSE WIDTH TJ = 25°C A 0.1 1 10 3.0V 20µs PULSE WIDTH TJ = 150°C A 0.1 1 10 1 1 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 10 10 TJ = 25°C TJ = 150°C TJ = 150°C TJ = 25°C 1 1 3.0 3.5 4.0 4.5 V DS = 10V 20µs PULSE WIDTH 5.0 5.5 6.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF9952PbF 2.0 N-Channel 0.12 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 2.2A 1.5 RDS (on) , Drain-to-Source On Resistance (Ω) 0.10 VGS = 4.5V 1.0 0.08 0.5 VGS = 10V 0.06 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.04 0 2 4 6 8 10 12 A TJ , Junction Temperature ( °C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance (Ω) E AS , Single Pulse Avalanche Energy (mJ) 0.16 100 TOP 80 0.14 BOTTOM ID 0.89A 1.6A 2.0A 0.12 0.10 60 0.08 I D = 3.5A 0.06 40 0.04 20 0.02 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V GS , Gate-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com N-Channel 350 IRF9952PbF ID = 1.8A VDS = 10V 300 VGS , Gate-to-Source Voltage (V) A V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 16 C, Capacitance (pF) 250 Ciss Coss 200 12 150 8 100 Crss 4 50 0 1 10 100 0 0 2 4 6 8 10 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF9952PbF 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP P-Channel 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 1 1 -3.0V -3.0V 0.1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 0.1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -ID , Drain-to-Source Current (A) 10 -ISD , Reverse Drain Current (A) 10 TJ = 25°C T J = 150°C 1 TJ = 150°C TJ = 25°C 1 0.1 3.0 4.0 5.0 VDS = -10V 20µs PULSE WIDTH 6.0 7.0 8.0 A 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel IRF9952PbF 2.5 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -1.0A RDS(on) , Drain-to-Source On Resistance ( Ω ) 2.0 1.5 1.5 1.0 VGS = -4.5V 1.0 0.5 0.5 VGS = -10V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 A TJ , Junction Temperature ( °C) -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( Ω ) 0.80 150 EAS , Single Pulse Avalanche Energy (mJ) 120 ID -0.58A -1.0A BOTTOM -1.3A TOP 0.60 90 0.40 I D = -2.3A 60 0.20 30 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 150 -V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( °C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current www.irf.com 7 IRF9952PbF 400 P-Channel 20 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ID = -2.3A VDS =-10V 16 C, Capacitance (pF) 300 Ciss Coss 200 12 8 100 Crss 4 0 1 10 100 A 0 0 2 4 6 8 10 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty fac