HEXFET Power MOSFET

www.DataSheet4U.com PD - 97065A IRF7905PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free VDSS 30V Q1 21.8m:@VGS = 10V Q2 17.1m:@VGS = 10V  '  RDS(on) max ID 7.8A 8.9A   6   *   6   *  '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 7.8 6.2 62 2.0 1.3 0.016 -55 to + 150 Q1 Max. 30 ± 20 Q2 Max. Units V 8.9 7.1 71 2.0 1.3 0.016 W/°C °C W A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 20 62.5 Q2 Max. 20 62.5 Units °C/W www.irf.com 1 07/10/06 IRF7905PbF BVDSS ∆ΒVDSS/∆TJ Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 Min. 30 ––– ––– ––– ––– ––– ––– 1.35 ––– ––– ––– ––– ––– ––– 15 18 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.024 0.024 17.4 23.4 13.7 17.1 1.8 -5.0 -5.0 ––– ––– ––– ––– ––– ––– 4.6 6.9 0.9 1.5 0.6 0.8 1.7 2.5 1.4 2.1 2.3 3.3 2.9 4.5 3.1 3.1 5.2 6.2 8.3 9.3 6.9 8.1 3.4 3.4 600 910 130 190 78 95 Max. ––– ––– ––– 21.8 29.3 17.1 21.3 2.25 ––– ––– 1.0 150 100 -100 ––– ––– 6.9 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.9 4.9 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– 10 13 2.5 4.0 Max. 2.8 2.8 62 71 1.0 1.0 15 20 3.8 6.0 Conditions Units VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.8A VGS = 4.5V, ID = 6.2A VGS = 10V, ID = 8.9A VGS = 4.5V, ID = 7.1A VDS = VGS, ID = 25µA RDS(on) Static Drain-to-Source On-Resistance mΩ e e e e VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Q oss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 V mV/°C µA nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 6.2A VDS = 15V, ID = 7.1A nC Q1 VDS = 15V VGS = 4.5V, ID = 6.2A Q2 VDS = 15V VGS = 4.5V, ID = 7.1A nC VDS = 16V, VGS = 0V Ω Q1 VDD = 15V, VGS = 4.5V ID = 6.2A ns Q2 VDD = 15V, VGS = 4.5V ID = 7.1A Clamped Inductive Load VGS = 0V VDS = 15V ƒ = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current ™ d Q1 Max. 12 6.2 Q2 Max. 18 7.1 Units mJ A Diode Characteristics IS ISM VSD trr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Units Conditions A MOSFET symbol showing the A integral reverse p-n junction diode. TJ = 25°C, IS = 6.1A, VGS = 0V V TJ = 25°C, IS = 7.1A, VGS = 0V Q1 TJ = 25°C, IF = 6.2A, ns VDD = 15V, di/dt = 100A/µs nC Q2 TJ = 25°C, IF = 7.1A, VDD = 15V, di/dt = 100A/µs Ù e e e e Reverse Recovery Time Reverse Recovery Charge 2 www.irf.com Typical Characteristics Q1 - Control FET 100 TOP IRF7905PbF Q2 - Synchronous FET 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 BOTTOM 1 1 0.1 0.1 2.3V ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 2.3V 0.01 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V Fig 2. Typical Output Characteristics 100 TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM 10 BOTTOM 2.3V 1 1 2.3V ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 100.0 100.0 Fig 4. Typical Output Characteristics ID, Drain-to-Source Current(Α) 10.0 ID, Drain-to-Source Current(Α) 10.0 TJ = 150°C TJ = 150°C 1.0 TJ = 25°C VDS = 15V ≤ 60µs PULSE WIDTH 1.0 TJ = 25°C VDS = 15V ≤ 60µs PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 6.0 0.1 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics www.irf.com 3 IRF7905PbF Q1 - Control FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Typical Characteristics Q2 - Synchronous FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) 1000 C, Capacitance (pF) Coss = Cds + Cgd Ciss Ciss Coss 100 Coss 100 Crss Crss 10 1 10 100 10 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 12 VGS, Gate-to-Source Voltage (V) 12 ID= 6.3A 10 8 6 4 2 0 0 2 VGS, Gate-to-Source Voltage (V) VDS= 25V VDS= 16V VDS= 7.6V ID= 7.1A 10 8 6 4 2 0 VDS= 25V VDS= 16V VDS= 7.6V 4 6 8 10 0 4 8 12 16 QG Total Gate Charge (nC) QG, Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 1000 Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 1msec ID, Drain-to-Source Current (A) 100 1msec 10 100µsec ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µsec 1 10msec 1 10msec 0.1 TA = 25°C Tj = 150°C Single Pulse 0.1 1 100msec 0.1 TA = 25°C Tj = 150°C Single Pulse 0.1 1 100msec 0.01 0.01 10 100 0.01 0.01 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com Typical Characteristics Q1 - Control FET 2.0 2.0 IRF7905PbF Q2 - Synchronous FET ID = 8.9A VGS = 10V RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.8A VGS = 10V 1.5 RDS(on), Drain-to-Source On Resistance (Normalized) 20 40 60 80 100 120 140 160 1.5 1.0 1.0 0.5 -60 -40 -20 0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) TJ , Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature 100.0 Fig 14. Normalized On-Resistance vs. Temperature 100 ISD, Reverse Drain Current (A) ISD , Reverse Drain Current (A) 10.0 TJ = 150°C 10 TJ = 150°C 1.0 1 TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage ( RDS (on), Drain-to -Source On Resistance mΩ) 50 Fig 16. Typical Source-Drain Diode Forward Voltage ( RDS (on), Drain-to -Source On Resistance mΩ) 50 ID = 7.8A 40 ID = 8.9A 40 30 TJ = 125°C 30 20 TJ = 25°C TJ = 125°C 20 10 2 4 6 8 10 10 2 4 6 TJ = 25°C 8 10 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance vs.Gate Voltage Fig 18. Typical On-Resistance vs.Gate Voltage www.irf.com 5 IRF7905PbF Q1 - Control FET 8 Typical Characteristics Q2 - Synchronous FET 10 8 ID, Drain Current (A) ID, Drain Current (A) 25 50 75 100 125 150 6 6 4 4 2 2 0 0 25 50 75 100 125 150 TJ, Ambient Temperature (°C) TJ, Ambient Temperature (°C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.2 Fig 20. Maximum Drain Current vs. Ambient Temp. 2.4 VGS(th), Gate threshold Voltage (V) VGS(th, Gate threshold Voltage (V) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 2.0 1.8 ID = 250µA ID = 250µA 1.6 1.4 1.2 -75 -50 -25 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TJ , Temperature ( °C ) Fig 21. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ) EAS, Single Pulse Avalanche Energy (mJ) 50 Fig 22. Threshold Voltage vs. Temperature 80 40 I D TOP 3.0A 3.5A BOTTOM 6.2A 60 I D 3.2A 3.7A BOTTOM 7.1A TOP 30 40 20 20 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Starting TJ, Junction Temperature (°C) Fig 23. Maximum Avalanche Energy vs. Drain Current