HEXFET Power MOSFET

www.DataSheet4U.com PD - 96084A IRF7904UPbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box VDSS 30V Q1 16.2m:@VGS = 10V Q2 10.8m:@VGS = 10V RDS(on) max ID 7.6A 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free G1 1 S2 S2 2 3 8 7 6 5 D1 S1 / D2 S1 / D2 S1 / D2 G2 4 SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range 7.6 6.1 61 1.4 0.9 0.011 -55 to + 150 Q1 Max. 30 ± 20 Q2 Max. Units V 11 8.9 89 2.0 1.3 0.016 W/°C °C W A c Thermal Resistance RθJL RθJA Parameter Junction-to-Drain Lead g Junction-to-Ambient fg Q1 Max. 20 90 Q2 Max. 20 62.5 Units °C/W www.irf.com 1 09/19/06 IRF7904UPbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Q1&Q2 Q1 Q2 Q1 Q2 VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Q1&Q2 Q1 Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1&Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. 30 ––– ––– ––– ––– ––– ––– 1.35 ––– ––– ––– ––– ––– ––– 17 23 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.024 0.024 11.4 14.5 8.6 10 ––– -5.0 -5.0 ––– ––– ––– ––– ––– ––– 7.5 14 2.2 3.7 0.6 1.1 2.5 4.8 2.2 4.4 3.1 5.9 4.5 9.1 3.2 2.9 6.9 7.8 7.3 10 10 15 3.2 4.6 910 1780 190 390 94 180 Max. ––– ––– ––– 16.2 20.5 10.8 13 2.25 ––– ––– 1.0 150 100 -100 ––– ––– 11 21 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.8 4.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– 11 16 2.6 6.9 Max. 1.8 2.5 61 88 1.0 1.0 17 24 3.9 10 Conditions Units VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 7.6A VGS = 4.5V, ID = 6.1A VGS = 10V, ID = 11A VGS = 4.5V, ID = 8.8A Q1: VDS = VGS, ID = 25µA V mV/°C Q2: VDS = VGS, ID = 50µA mΩ µA nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 6.1A VDS = 15V, ID = 8.8A RDS(on) Static Drain-to-Source On-Resistance e e e e nC Q1 VDS = 15V VGS = 4.5V, ID = 6.1A Q2 VDS = 15V VGS = 4.5V, ID = 8.8A nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Ω Q1 VDD = 15V, VGS = 4.5V ID = 6.1A ns Q2 VDD = 15V, VGS = 4.5V ID = 8.8A Clamped Inductive Load VGS = 0V VDS = 15V ƒ = 1.0MHz pF Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current ™ d Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Max. 140 6.1 Q2 Max. 250 8.8 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Units Conditions A MOSFET symbol showing the integral reverse A p-n junction diode. TJ = 25°C, IS = 6.1A, VGS = 0V V TJ = 25°C, IS = 8.8A, VGS = 0V Q1 TJ = 25°C, IF = 6.1A, ns VDD = 15V, di/dt = 100A/µs nC Q2 TJ = 25°C, IF = 8.8A, VDD = 15V, di/dt = 100A/µs Ù Reverse Recovery Time Reverse Recovery Charge e e e e 2 www.irf.com Typical Characteristics Q1 - Control FET 100 TOP IRF7904UPbF Q2 - Synchronous FET 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10 BOTTOM VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 10 TOP 1 1 2.5V BOTTOM VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.5V 0.1 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TOP VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V Fig 2. Typical Output Characteristics 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) BOTTOM TOP 10 10 2.5V BOTTOM 2.5V ≤ 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VGS 10V 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V ≤ 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 100.0 100.0 Fig 4. Typical Output Characteristics ID, Drain-to-Source Current(Α) 10.0 ID, Drain-to-Source Current(Α) TJ = 150°C 10.0 TJ = 150°C 1.0 TJ = 25°C 1.0 TJ = 25°C VDS = 15V ≤ 60µs PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 VDS = 15V ≤ 60µs PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Transfer Characteristics www.irf.com 3 IRF7904UPbF Q1 - Control FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Typical Characteristics Q2 - Synchronous FET 10000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 Ciss C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss 100 Crss Coss Crss 10 1 10 100 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage 12 VGS, Gate-to-Source Voltage (V) 12 ID= 6.1A 10 8 6 4 2 0 0 5 VGS, Gate-to-Source Voltage (V) VDS = 24V VDS= 15V ID= 8.8A 10 8 6 4 2 0 VDS= 24V VDS= 15V 10 15 20 0 5 10 15 20 25 30 35 QG Total Gate Charge (nC) QG Total Gate Charge (nC) Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec 100 1msec 10 10msec 1 100msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 100µsec 100 100µsec 10 10msec 1 100msec 0.1 TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 0.01 0.01 0.01 0.01 VDS , Drain-toSource Voltage (V) VDS , Drain-toSource Voltage (V) Fig 11. Maximum Safe Operating Area Fig 12. Maximum Safe Operating Area 4 www.irf.com Typical Characteristics Q1 - Control FET 1.5 IRF7904UPbF Q2 - Synchronous FET 1.5 RDS(on) , Drain-to-Source On Resistance (Normalized) RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.6A VGS = 10V ID = 11A VGS = 10V 1.0 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature 100.0 Fig 14. Normalized On-Resistance vs. Temperature 100.0 TJ , Junction Temperature (°C) ISD, Reverse Drain Current (A) ISD, Reverse Drain Current (A) 10.0 TJ = 150°C TJ = 150°C 10.0 1.0 1.0 TJ = 25°C TJ = 25°C VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage ( RDS (on), Drain-to -Source On Resistance mΩ) 40 VSD, Source-to-Drain Voltage (V) Fig 16. Typical Source-Drain Diode Forward Voltage ( RDS (on), Drain-to -Source On Resistance mΩ) 25 ID = 7.6A 35 ID = 11A 20 30 25 15 TJ = 125°C 20 TJ = 125°C 10 15 TJ = 25°C 5 2.0 4.0 6.0 8.0 10.0 10 2.0 4.0 6.0 TJ = 25°C 8.0 10.0 VGS, Gate-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance vs.Gate Voltage Fig 18. Typical On-Resistance vs.Gate Voltage www.irf.com 5 IRF7904UPbF Q1 - Control FET 8 Typical Characteristics Q2 - Synchronous FET 12 10 ID , Drain Current (A) ID , Drain Current (A) 25 50 75 100 125 150 6 8 4 6 4 2 2 0 0 25 50 75 100 125 150 TJ , Ambient Temperature (°C) TJ , Ambient Temperature (°C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.6 Fig 20. Maximum Drain Current vs. Ambient Temp. 2.2 VGS(th) Gate threshold Voltage (V) 2.2 VGS(th) Gate threshold Voltage (V) 1.8 ID = 250µA 1.8 ID = 250µA 1.4 1.4 1.0 -75 -50 -25 0 25 50 75 100 125 150 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TJ , Temperature ( °C ) Fig 21. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ) 600 Fig 22. Threshold Voltage vs. Temperature EAS, Single Pulse Avalanche Energy (mJ) 1200 500 I D TOP 0.34A 0.48A BOTTOM 6.1A 1000 I D 0.57A 0.77A BOTTOM 8.8A TOP 400 800 300 600 200 400 100 200 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Starting TJ , Junction Temperature (°C) Fig 23