HEXFET Power MOSFET

PD -95992 IRF7726PbF l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free HEXFET® Power MOSFET VDSS -30V RDS(on) max 0.026@VGS = -10V 0.040@VGS = -4.5V ID -7.0A -6.0A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. S 1 8 A D D D D S S G 2 7 3 6 4 5 Top View MICRO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -7.0 -5.7 -28 1.79 1.14 0.01 ±20 -55 to +150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 70 Units °C/W www.irf.com 1 02/22/05 IRF7726PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 10 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.016 ––– ––– ––– ––– ––– ––– ––– ––– 46 8.0 8.1 15 25 227 107 2204 341 220 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.026 VGS = -10V, ID = -7.0A ‚ Ω 0.040 VGS = -4.5V, ID = -6.0A ‚ -2.5 V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -7.0A -15 VDS = -24V, VGS = 0V µA -25 VDS = -24V, VGS = 0V, TJ = 70°C -100 VGS = -20V nA 100 VGS = 20V 69 ID = -7.0A ––– nC VDS = -15V ––– VGS = -10V 23 VDD = -15V, VGS = -10V 38 ID = -1.0A ns 341 RG = 6.0Ω 161 RD = 15Ω ‚ ––– VGS = 0V ––– pF VDS = -25V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 35 32 -1.8 A -28 -1.2 53 48 V ns µC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -1.8A, VGS = 0V ‚ TJ = 25°C, I F = -1.8A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on 1 inch square copper board, t < 10 sec. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF7726PbF 100 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP 100 VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 1 -2.5V 0.1 -2.5V 1 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 10 100 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 ID = -7.0A -I D , Drain-to-Source Current (A) 1.5 10 TJ = 150° C 1.0 1 TJ = 25 ° C 0.5 0.1 2.0 V DS= -15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7726PbF 3200 2800 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 16 14 12 10 8 6 4 2 0 0 ID = -7.0A V DS=-24V V DS=-15V C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 Ciss Coss Crss 10 100 10 20 30 40 50 60 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) TJ = 25 ° C OPERATION IN THIS AREA LIMITED BY RDS(on) 10 -ID , Drain Current (A) I TJ = 150 ° C 100us 10 1ms 1 0.1 0.0 V GS = 0 V 1.5 3.0 4.5 6.0 1 0.1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7726PbF 8.0 VDS VGS RD -ID , Drain Current (A) 6.0 4.0 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 t2 Thermal Response (Z thJA ) PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com + - RG D.U.T. V DD 5 IRF7726PbF RDS ( on ) , Drain-to-Source On Resistance Ω ) ( ( , RDS(on) Drain-to -Source On ResistanceΩ) 0.070 0.120 0.060 0.050 0.080 0.040 ID = -7.0A 0.030 VGS = -4.5V 0.040 VGS = -10V 0.020 0.010 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.000 0 10 20 30 40 50 60 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7726PbF 2.4 150 2.1 120 -VGS(th) ( V ) ID = -250µA 1.8 Power (W) 150 90 60 1.5 30 1.2 -75 -50 -25 0 25 50 75 100 125 0 0.001 0.010 0.100 1.000 10.000 100.000 TJ , Temperature ( °C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7726PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17 For P Channel HEXFETS 8 www.irf.com IRF7726PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS D -B3 DDDD 8765 3 E -A1234 SSSG S1 G1 S2 G2 8765 H 0.25 (.010) M A M SINGLE 1234 DUAL 1234 D1 D1 D2 D2 8765 DIM INCHES MIN MAX MILLIMETERS MIN MAX A A1 B C D e e1 E H L θ .036 .004 .010 .005 .116 .044 .008 .014 .007 .120 0.91 0.10 0.25 0.13 2.95 1.11 0.20 0.36 0.18 3.05 .0256 BASIC .0128 BASIC .116 .188 .016 0° .120 .198 .026 6° 0.65 BASIC 0.33 BASIC 2.95 4.78 0.41 0° 3.05 5.03 0.66 6° e 6X e1 θ A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X 0.38 8X ( .015 ) 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 6X ( .0256 ) Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF7501 LOT CODE (XX) DAT E CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPT IONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WW = (27-52) IF PRECEDED BY A LET TE R YEAR 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 24 25 26 X Y Z 50 51 52 X Y Z www.irf.com 9 IRF7726PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to ch