Power MOSFET

www.DataSheet4U.com PD - 95367 IRF7350PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 100V RDS(on) 0.21Ω P-Ch -100V 0.48Ω 6 5 P-CHANNEL MOSFET Top View Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C EAS VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. N-Channel 100 2.1 1.7 8.4 2.0 0.016 35 ± 20 4.0 -55 to + 150 51 ± 20 4.3 P-Channel -100 -1.5 -1.2 -6.0 Units A W W/°C mJ V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ. ––– ––– Max. 20 62.5 Units °C/W www.irf.com 1 6/10/04 IRF7350PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units 100 — — V -100 — — — 0.12 — V/°C — -0.11 — — — — — — — — — — — — 19 21 3.0 3.4 8.8 10 6.7 25 11 13 35 30 20 40 380 360 100 110 54 65 0.21 0.48 Ω Conditions VGS = 0V, I D = 250µA VGS = 0V, ID = -250µA Reference to 25°C, I D = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 2.1A ‚ VGS = -10V, ID = -1.5A ‚ ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient R DS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf C iss C oss C rss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Ch — P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch — 2.0 -2.0 2.4 1.1 — — — — –– — — — — — — — — — — — — — — — — — — — — 4.0 V -4.0 — S — 25 -25 µA 250 -250 ±100 28 31 4.5 nC 5.1 13 16 — — — — ns — — — — — — — pF — — — VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 50V, ID = 2.1A VDS = -50V, ID = -1.5A VDS = 100V, VGS = 0V ‚ VDS = -100V, VGS = 0V ‚ VDS = 80 V, VGS = 0V, TJ = 70°C VDS = -80V, VGS = 0V, TJ = 70°C VGS = ± 20V N-Channel ID = 2.1A, VDS = 80V, VGS = 10V P-Channel ID = -1.5A, VDS = -80V, VGS = -10V N-Channel VDD = 50V, I D = 1.0A, RG = 22Ω, RD = 50Ω, VGS = 10V P-Channel VDD = -50V, ID = -1.0A, RG = 22Ω, RD = 50Ω, VGS = -10V N-Channel VGS = 0V, V DS = 25V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -25V, ƒ = 1.0MHz ‚ Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 1.8 — — -1.4 A — — 8.4 — — -6.0 — — 1.3 TJ = 25°C, IS = 1.8A, VGS = 0V ‚ V — — -1.6 TJ = 25°C, IS = -1.4A, VGS = 0V ‚ — 72 110 ns N-Channel — 77 120 TJ = 25°C, IF = 1.8A, di/dt = 100A/µs — 205 310 nC P-Channel TJ = 25°C, IF = -1.4A, di/dt = -100A/µs — 240 360 ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ N channel: Starting TJ = 25°C, L = 4.0mH, RG = 25Ω, IAS = 4.2A P channel: Starting TJ = 25°C, L = 11mH, RG = 25Ω, IAS = -3.0A ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. ƒ Surface mounted on 1 in square Cu board 2 www.irf.com N-CHANNEL IRF7350PbF 100 VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V TOP 100 10 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 4.0V TOP 10 1 1 4.0V 0.1 0.1 4.0V 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10.00 2.5 I D = 2.1A ID, Drain-to-Source Current (Α) 1.00 R DS(on) , Drain-to-Source On Resistance TJ = 150°C 2.0 (Normalized) 1.5 T J = 25°C 0.10 1.0 0.5 0.01 3.0 4.5 VDS = 15V 20µs PULSE WIDTH 6.0 7.5 9.0 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 10V 120 140 160 VGS, Gate-to-Source Voltage (V) TJ, Junction Temperature (° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7350PbF 10000 N-CHANNEL VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds VGS, Gate-to-Source Voltage (V) 12 ID = 2.1A 10 VDS = 80V VDS = 50V VDS = 20V C, Capacitance(pF) 1000 7 Ciss Coss Crss 5 100 2 10 1 10 100 0 0 4 8 12 16 20 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10.00 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µsec 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 1msec 1.00 T J = 150°C T J = 25°C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10msec VGS = 0V 0.10 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) 0.1 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com N-CHANNEL IRF7350PbF VDS RD 2.5 2.0 VGS RG D.U.T. + ID , Drain Current (A) 1.5 -V DD VGS 1.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 100 D = 0.50 (Z thJA ) 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TA 10 100 J = P DM x Z thJA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7350PbF RDS(on) , Drain-to -Source On Resistance (Ω) 0.40 N-CHANNEL 0.30 RDS (on) , Drain-to-Source On Resistance (Ω) 0.18 0.17 0.20 ID = 2.1A VGS = 10V 0.16 0.10 0.00 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 0.15 0 2 4 6 8 10 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 4.0 70 60 VGS(th) Gate threshold Voltage (V) 3.5 50 Power (W) 50 75 100 125 150 3.0 ID = 250µA 40 30 20 10 2.5 2.0 -75 -50 -25 0 25 0 1.00 10.00 100.00 1000.00 T J , Temperature ( °C ) Time (sec) 6 Fig 14. Typical Threshold Voltage Vs. Junction Temperature Fig 15. Typical Power Vs. Time www.irf.com N-CHANNEL IRF7350PbF 100 ID TOP 1.9A 3.4A 4.2A 80 BOTTOM 15V EAS , Single Pulse Avalanche Energy (mJ) 60 VDS L DRIVER 40 RG 20V D.U.T IAS + V - DD A 20 tp 0.01Ω Fig 16c. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting T , J Junction Temperature ( °C) Fig 16a. Maximum Avalanche Energy Vs. Drain Current V(BR)DSS tp I AS Fig 16d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF QG VGS D.U.T. + V - DS QGS VG QGD VGS 3mA IG ID Current Sampling Resistors Charge Fig 17. Gate Charge Test Circuit Fig 18. Basic Gate Charge Waveform www.irf.com 7 IRF7350PbF 10 N-CHANNEL Duty Cycle = Single Pulse Avalanche Current (A) 1 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.1 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tav (sec) Fig 19. Typical Avalanche Current Vs.Pulsewidth 40 EAR , Avalanche Energy (mJ) 30 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 4.2A 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = t av ·f ZthJC(D,