HEXFET Power MOSFET

PD - 95197 IRF7338PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 12V P-Ch -12V 6 5 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.150Ω Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. www.DataSheet4U.com SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. N-Channel 12 6.3 5.2 26 2.0 1.3 16 ±12 „ -55 to + 150 ± 8.0 P-Channel -12 -3.0 -2.5 -13 Units A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ. ––– ––– Max. 20 62.5 Units °C/W www.irf.com 1 9/30/04 IRF7338PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 12 -12 — — — — — — 0.6 -0.40 9.2 3.5 — — — — –– — — — — — — — — — — — — — — — — — — — — — Typ. — — 0.01 -0.01 — — — — — — — — — — — — — — — — — — — — 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 Max. — — — — 0.034 0.060 0.150 0.200 1.5 -1.0 — — 20 -1.0 50 -25 ±100 ±100 8.6 6.6 1.9 1.3 3.9 1.6 — — — — — — — — — — — — — — Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 4.5V, ID = 6.0A ‚ VGS = 3.0V, ID = 2.0A ‚ VGS = -4.5V, ID = -2.9A ‚ VGS = -2.7V, ID = -1.5A ‚ VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 6.0V, ID = 6.0A ‚ VDS = -6.0V, ID = -1.5A ‚ VDS = 9.6V, VGS = 0V VDS = -9.6 V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 55°C VDS = -9.6V, VGS = 0V, TJ = 55°C VGS = ± 12V VGS = ± 8.0V N-Channel ID = 6.0A, VDS = 6.0V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -9.6V, VGS = -4.5 V N-Channel VDD = 6.0V, ID = 1.0A, RG = 6.0Ω, VGS = 4.5V P-Channel VDD = -6.0V, ID = -2.9A, RG = 6.0Ω, VGS = -4.5V pF N-Channel VGS = 0V, VDS = 9.0V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -9.0V, ƒ = 1.0KHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance nC ns ‚ Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 6.3 — — -3.0 A — — 26 — — -13 — — 1.3 TJ = 25°C, IS = 1.7A, VGS = 0V ‚ V — — -1.2 TJ = 25°C, IS = -2.9A, VGS = 0V ‚ — 51 76 N-Channel ns — 37 56 TJ = 25°C, IF = 1.7A, di/dt = 100A/µs — 43 64 P-Channel nC TJ = 25°C, IF = -2.9A, di/dt = -100A/µs — 20 30 ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 400µs; duty cycle ≤ 2%. ƒ Surface mounted on 1 in square Cu board. „ The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. 2 www.irf.com N-Channel 100 100 IRF7338PbF VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP 10 1 1.5V 0.1 1 1.5V 0.01 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100.0 ID, Drain-to-Source Current ( A) T J = 25°C T J = 150°C 10 ISD, Reverse Drain Current (A) 10.0 T J = 150°C 1.0 T J = 25°C VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4 1 1.0 2.0 VDS = 10V 20µs PULSE WIDTH 3.0 4.0 0.1 VGS , Gate-to-Source Voltage (V) VSD, Source-toDrain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7338PbF 2.0 N-Channel 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 5 10 15 20 25 30 ID , Drain Current (A) VGS = 4.5V I D = 6.3A RDS(on) , Drain-to-Source On Resistance 1.5 R DS (on) , Drain-to-Source On Resistance ( Ω) (Normalized) VGS = 3.0V 1.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 4.5V 120 140 160 TJ , Junction Temperature ( °C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to -Source On Resistance ( Ω) 0.05 80 60 0.04 Power (W) 0.03 40 ID = 6.3A 20 0.02 3.0 4.0 5.0 6.0 7.0 8.0 0 0.00 0.00 0.00 0.01 0.10 1.00 10.00 VGS, Gate -to -Source Voltage (V) Time (sec) 4 Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Typical Power Vs. Time www.irf.com N-Channel 1000 IRF7338PbF 12 ID= 6.0A VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds 800 10 8 6 4 2 0 VDS= 12V C, Capacitance (pF) 600 Ciss Coss 400 200 Crss 0 1 10 100 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 D = 0.50 (Z thJA) 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TA 1 10 J = P DM x Z thJA 0.1 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7338PbF 7.0 N-Channel VDS 6.0 RD VGS RG VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D.U.T. + 5.0 ID , Drain Current (A) -VDD 4.0 3.0 2.0 Fig 13a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 1.0 0.0 TC , Case Temperature ( °C) Fig 12. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 13b. Switching Time Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ 12V .2µF .3µF VGS VG QGS QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com P-Channel IRF7338PbF VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 100 -I D, Drain-to-Source Current (A) 10 -I D, Drain-to-Source Current (A) VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 100 10 -1.5V 1 -1.5V 1 0.1 0.1 1 20µs PULSE WIDTH Tj = 25°C 10 0.1 0.1 1 20µs PULSE WIDTH Tj = 150°C 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 15. Typical Output Characteristics Fig 16. Typical Output Characteristics 100 100.0 -I D, Drain-to-Source Current ( A) -I SD, Reverse Drain Current (A) 10.0 T J = 150°C 10 T J = 25°C T J = 150°C 1.0 T J = 25°C VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1.0 2.0 VDS = -10V 20µs PULSE WIDTH 3.0 4.0 0.1 -V GS , Gate-to-Source Voltage (V) -V SD, Source-toDrain Voltage (V) Fig 17. Typical Transfer Characteristics Fig 18. Typical Source-Drain Diode Forward Voltage www.irf.com 7 IRF7338PbF 2.0 P-Channel 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0 2 4 6 8 10 12 14 -I D , Drain Current (A) VGS = -2.7V I D = -3.0A RDS(on) , Drain-to-Source On Resistance 1.5 1.0 RDS (on) , Drain-to-Source On Resistance ( Ω) (Normalized) 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = -4.5V 120 140 160 TJ , Junction Temperature ( °C) Fig 19. Normalized On-Resistance Vs. Temperature Fig 20. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to -Source On Resistance ( Ω) 0.12 80 60 0.10 Power (W) 0.08 40 ID = -3.0A 20 0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 0.00 0.00 0.00 0.01 0.10 1.00 10.00 -V GS, Gate -to -Source Voltage (V) Time (sec) Fig 21. Typical On-Resistance Vs. Gate Voltage Fig 22. Maximum Avalanche Energy Vs. Drain Current 8 www.irf.com P-Channel 800 IRF7338PbF ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ciss 400 200 Coss Crss 0 1 10 100 0 2 4 6 8 10 - -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 23. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Gate Charge Vs. Gate-to-Source Voltage 100 D = 0.50 (Z thJA) 0.20 10 0.10 Thermal Response 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P