HEXFET Power MOSFET

PD- 94095A HEXFET® Power MOSFET l l l l l IRF7329 ID ±9.2A ±7.4A ±4.6A Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V New P-Channel HEXFET Ò power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Description S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter V DS ID @ TA = 25°C I D @ TA= 70°C I DM PD @TA = 25°C P D @TA = 70°C V GS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -9.2 -7.4 -37 2.0 1.3 16 ± 8.0 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RqJL RqJA Parameter Junction-to-Drain Lead Junction-to-Ambient ƒ Typ. ––– ––– Max. 20 62.5 Units °C/W www.irf.com 1 01/29/04 IRF7329 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 ––– ––– ––– ––– -0.40 25 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.007 ––– ––– ––– ––– ––– ––– ––– ––– ––– 38 6.8 8.1 10 8.6 340 260 3450 1000 640 Max. Units Conditions ––– V V GS = 0V, ID = -250µA ––– V/°C Reference to 25°C, I D = -1mA 17 V GS = -4.5V, ID = -9.2A ‚ mW V GS = -2.5V, ID = -7.4A ‚ 21 30 V GS = -1.8V, ID = -4.6A ‚ -0.90 V V DS = V GS, ID = -250µA ––– S V DS = -10V, ID = -9.2A -1.0 V DS = -9.6V, VGS = 0V µA -25 V DS = -9.6V, VGS = 0V, T J = 70°C -100 nA V GS = -8.0V 100 V GS = 8.0V 57 I D = -9.2A 10 nC V DS = -6.0V 12 V GS = -4.5V ––– V DD = -6.0V ns ––– I D = -1.0A ––– R D = 6.0W ––– V GS = -4.5V ‚ ––– V GS = 0V ––– pF V DS = -10V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 50 48 -2.0 A -37 -1.2 75 72 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. T J = 25°C, IS = -2.0A, VGS = 0V ‚ T J = 25°C, IF = -2.0A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on 1 inch square copper board. ‚ Pulse width £ 400µs; duty cycle £ 2%. 2 www.irf.com IRF7329 100 VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS -10V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 10 1 -1.2V -1.2V 20µs PULSE WIDTH TJ = 150 °C 1 10 0.1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 1 0.1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics  $   † € q „ „ ‡ 7  q i „ ‡  S   †  € u g „ RDS(on) , Drain-to-Source On Resistance (Normalized)  2.0 ID = -9.2A 1.5 T 1Â#u7 D  1.0 8   C8  T 1 #u7 D V 1ÂV 8S 0.5   V z…ÂPUFS9ÂWC8TB    0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 ÂAg†q†S‡„iqÂVx†gsqÂV AS TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7329 # VASÂÂÂ1ÂVÂÂÂÂÂÂÂrÂ1ÂÂGB` 7u……ÂÂÂÂ1Â7 Â7sp ÂÂÂ7 ÂÂÂSBIRT98 s… p… 7„…… sp ÂÂ1Â7 7…… p…ÂÂ7sp Â1Â7 10 ID = -9.2A VDS =-9.6V VDS =-6V -VGS , Gate-to-Source Voltage (V) " 8  @ ‚  ! q i € g u†i g ‚  g Â7  7  7u…… 6 4 7…… 7„…… 2   V  Â8„gu€†S‡„iqÂVx†gsqÂV 8S  0 0 10 20 30 40 50 60 70 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 ° C -ID , Drain Current (A) I 100us 10 1ms 1 TJ = 25 ° C 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1 0.1 TA = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7329 10.0 VDS 8.0 RD VGS RG D.U.T. + -ID , Drain Current (A) 6.0 VGS Pulse Width £ 1 µs Duty Factor £ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7329   :  q i € †g … u…  q R € ÂI q i „  ‡  S   † € ug „  Â8  €   S 8 R C 8 1Â' 5  V     :  q i € †g …  # u… q R € ÂI q i „   ‡  S   †  u€ g „ # 8  € Â  S 8 R   ! VASÂ1Â&V VASÂ1 #V VASÂ1Â"#V " $ &   " ÂAg†q†ÂS‡„iqÂVx†gsqÂÂV AS C 8 Â8„gu€Â7‡„„q€†Â5 Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS VG QGD 12V .2µF .3µF VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF7329    V   q s g  † x  V  p x  t … q  „ t †  q † g A   t †   S A V          C8Â1 #z5  W   „ q ‰  P               T DÂÂTqy‚q„g†‡„qÂÂu7 TuyqÂ…qi Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7329 SO-8 Package Details 9 6 ' & ! % " $ 7 9DH 6 6 i DI8C@T HDI H6Y $"! %'' #  " &$  '( (' ! 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CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/04 9