FETKY MOSFET / Schottky Diode

PD - 93763 IRF7326D2 FETKY™ MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 7 K K D D VDSS = -30V RDS(on) = 0.10Ω Schottky Vf = 0.52V 2 3 6 4 5 Top Vie w Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. www.DataSheet4U.com S O -8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current  Pulsed Drain Current Œ Power Dissipation  Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt  Junction and Storage Temperature Range Maximum -3.6 -2.9 -29 2.0 1.3 16 ± 20 -5.0 -55 to +150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Junction-to-Ambient  Maximum 62.5 Units °C/W Notes: Œ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)  ISD ≤ -1.8A, di/dt ≤ -90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Ž Pulse width ≤ 300µs; duty cycle ≤ 2%  Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com 1 8/19/99 IRF7326D2 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 — — -1.0 2.5 — — — — — — — — — — — — — — Typ. — 0.073 0.13 — — — — — — — — — 11 17 25 18 440 200 93 Max. Units Conditions — V V GS = 0V, ID = -250µA 0.10 VGS = -10V, ID = -1.8A ƒ Ω 0.16 VGS = -4.5V, ID = -1.5A ƒ — V VDS = VGS, ID = -250µA — S VDS = -24V, ID = -1.8A -1.0 VDS = -24V, VGS = 0V µA -25 VDS = -24V, VGS = 0V, TJ = 55°C 100 VGS = -20V nA -100 V GS = 20V 25 ID = -1.8A 2.9 nC VDS = -24V 9.0 VGS = -10V (see figure 6) Ž — VDD = -15V — ID = -1.8A ns — RG = 6.0Ω — R D = 8.2Ω Ž — VGS = 0V — pF VDS = -25V — ƒ = 1.0MHz (see figure 5) Conditions MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Min. Typ. Max. Units — — -2.5 A — — -29 — — -1.0 V — 53 80 ns — 66 99 nC Max. Units 2.8 A 1.8 200 20 A TJ = 25°C, IS = -1.8A, VGS = 0V TJ = 25°C, IF = -1.8A di/dt = 100A/µs Ž Schottky Diode Maximum Ratings If (av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25°C 50% Duty Cycle. Rectangular Wave, Tc = 70°C 5µs sine or 3µs Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Vfm Parameter Max. Forward voltage drop Max. Units 0.57 0.77 V 0.52 0.79 0.30 mA 37 310 pF 4900 V/µs Conditions If = 3.0, Tj = 25°C If = 6.0, Tj = 25°C If = 3.0, Tj = 125°C If = 6.0, Tj = 125°C . Vr = 30V Tj = 25°C Tj = 125°C Vr = 5Vdc ( 100kHz to 1 MHz) 25°C Rated Vr Irm Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7326D2 Power Mosfet Characteristics 100 TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 -ID , D rain-to-S ource C urrent (A ) 10 -4.5V -I D , D rain-to-S ource C urrent (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 1 0.1 1 2 0µ s P U L S E W ID TH TJ = 25 °C A 10 100 1 0.1 1 2 0µ s P U L S E W ID TH T J = 15 0°C 10 A 100 -VD S , D rain-to-S ource V oltage (V ) -V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 2 5 °C T J = 1 5 0°C R D S (o n) , D rain-to -S ource O n R e sistance (N orm alized) I D = -3 .0A -I D , D ra in -to-Sou rce C urrent (A ) 1.5 10 1.0 0.5 1 4 5 6 7 V D S = -1 5 V 2 0µ s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -1 0V 100 120 140 160 A -V G S , G ate -to-Source Volta ge (V) T J , Junction T em perature (°C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7326D2 Power Mosfet Characteristics 1000 800 -V G S , G a te-to-S ou rc e V o ltag e (V ) V GS C iss C rs s C oss = = = = 0V , f = 1M H z Cg s + C gd , Cds S H O R TE D C gd C ds + C gd 20 I D = -3.0A V D S = -24 V 16 C , C apacitanc e (pF ) 600 C iss C o ss 12 400 8 200 C rss 4 0 1 10 100 A 0 0 5 10 FO R TE S T C IR C U IT S E E FIG U R E 12 15 20 25 A -VD S , Drain -to -S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -I S D , Reverse D ra in Cu rre nt (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 1 5 0°C TJ = 25 °C 1 -I D , Drain Current (A) I 100us 10 1ms 0.1 0.0 0.3 0.6 0.9 VG S = 0 V 1.2 A 1 1 TC = 25 °C TJ = 150 °C Single Pulse 10 10ms 100 1.5 -VS D , S ource-to-D rain Vo ltage (V ) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7326D2 Power Mosfet Characteristics 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 P DM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R DS (on), Drain-to-Source On Resistance ( Ω ) R DS (on), Drain-to-Source On Resistance ( Ω ) 0.50 0.14 0.40 0.12 0.30 VGS = -4.5V 0.20 0.10 ID = -3.6A VGS = -10V 0.10 0.08 0.00 0 2 4 6 8 10 12 14 0.06 4 6 8 10 12 14 16 -I D , Drain Current (A) -VGS , Gate-to-Source Voltage (V) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7326D2 Schottky Diode Characteristics 100 100 T J = 150°C 10 125°C 100°C Reverse Current - IR (mA) 1 75°C 0.1 50°C 25°C In sta n ta n e ou s Fo rw a rd Cu rren t - I F (A ) 10 0.01 T J = 1 50 °C T J = 1 25 °C T J = 2 5 °C 0.001 0 5 10 15 20 25 30 A Reverse Voltage - V R (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage A llow ab le A m bient Tem pe ra ture - (°C ) 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 D D D D D = 3/4 = 1/2 =1 /3 = 1/4 = 1/5 V r = 8 0 % R ated R t hJA = 6 2.5° C /W Sq uare wave DC 0.1 0.0 0.2 0.4 0.6 0.8 1.0 ( ) Forward Voltage Drop - VF (V) Fig. 12 - Typical Forward Voltage Drop Characteristics A Av era ge F orw ard C urrent - I F(AV ) (A ) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7326D2 SO-8 Package Details D -B - D IM 5 θ IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A A1 B 5 8 E -A - 7 6 5 H 0.2 5 (.0 10 ) M A M 1 2 3 4 C D E e e1 H K e 6X e1 A θ K x 45 ° .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0° .2 440 .019 .050 8° 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0° 6.20 0 .48 1.27 8° -CB 8X 0 .25 (.01 0) N O TE S : A1 M C A S B S 0 .10 (.00 4) L 8X 6 C 8X L θ R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking (IRF7101 example ) D A T E C O D E (Y W W ) Y = L A S T D IG IT O F T H E Y E A R a W W = W EEK 312 IN T E R N A T IO N A L R E C T IF IE R L OG O TOP F 7 10 1 PART NUM BER XX X X W AFER L OT C ODE (L A S T 4 D IG IT S ) BOTTOM www.irf.com 7 IRF7326D2 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .484 ) 11 .7 ( .461 ) 8.1 ( .31 8 ) 7.9 ( .31 2 ) F E E D D IR E C T IO N N OTE S : 1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R. 2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ). 3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 . 33 0.00 (12 .992 ) M AX . 14.4 0 ( .5 66 ) 12.4 0 ( .4 88 ) NOTES : 1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T