IRF7319PBF (International Rectifier)

Part Number	IRF7319PBF
Manufacturer	International Rectifier
Semiconductor DataSheet
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www.DataSheet4U.com PD - 95267 IRF7319PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P-CHANNEL MOSFET RDS(on) 0.029Ω 0.058Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C V DS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 82 4.0 0.20 5.0 -5.0 -55 to + 150 °C N-Channel 30 6.5 5.2 30 2.5 2.0 1.3 140 -2.8 Maximum P-Channel -30 ± 20 -4.9 -3.9 -30 -2.5 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range A W mJ A mJ V/ ns Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RθJA Limit 62.5 Units °C/W 8/17/04 IRF7319PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 Typ. Max. 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 14 7.7 1.0 -1.0 25 -25 ±100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 710 320 380 130 180 Units V V/°C Ω V S µA nA Conditions VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250µA VDS = VGS, I D = -250µA VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55°C VDS = -24V, V GS = 0V, TJ = 55°C VGS = ±20V N-Channel I D = 5.8A, VDS = 15V, VGS = 10V P-Channel I D = -4.9A, V DS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0Ω, RD = 15Ω P-Channel VDD = -15V, ID = -1.0A, RG = 6.0Ω, RD = 15Ω N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 30 -30 0.78 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V 45 68 N-Channel ns 44 66 TJ = 25°C, I F =1.7A, di/dt = 100A/µs 58 87 P-Channel nC TJ = 25°C, I F = -1.7A, di/dt = 100A/µs 42 63 Repetitive rating; pulse width limited by Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t ≤ 10sec. N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel I SD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. N-Channel 100 IRF7319PbF VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) 10 I D, Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 10 3.0V 3.0V 1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 V DS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25°C TJ = 150°C 10 ISD , Reverse Drain Current (A) TJ = 150°C 10 TJ = 25°C 1 3.0 3.5 4.0 VDS = 10V 20µs PULSE WIDTH 4.5 5.0 A 1 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 A 1.6 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7319PbF 2.0 N-Channel 0.040 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.8A RDS (on) , Drain-to-Source On Resistance (Ω) 0.036 V GS = 4.5V 1.5 0.032 1.0 0.028 0.5 0.024 V GS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.020 0 10 20 30 40 A TJ , Junction Temperature ( °C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance (Ω) E AS , Single Pulse Avalanche Energy (mJ) 0.12 200 TOP 160 I IDD 0.10 BOTTOM 1.8A 3.2A 4.0A 0.08 120 0.06 I D = 5.8A 0.04 80 40 0.02 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 A 150 V GS , Gate-to-Source Voltage (V) Starting T J , Junction Temperature (°C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current N-Channel 1200 IRF7319PbF 20 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ID = 5.8A VDS = 15V 16 C, Capacitance (pF) 900 Ciss Coss 12 600 8 300 Crss 4 0 1 10 100 A 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7319PbF 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP P-Channel 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 10 -3.0V -3.0V 1 0.1 1 20µs PULSE WIDTH TJ = 25°C A 10 1 0.1 1 20µs PULSE WIDTH TJ = 150°C A 10 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25°C TJ = 150°C 10 -ISD , Reverse Drain Current (A) TJ = 150°C 10 TJ = 25°C 1 3.0 3.5 4.0 4.5 V DS = -10V 20µs PULSE WIDTH 5.0 5.5 6.0 A 1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode Forward Voltage P-Channel IRF7319PbF 0.6 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.9A RDS(on) , Drain-to-Source On Resistance ( Ω ) 0.5 1.5 0.4 1.0 0.3 0.2 V GS = -4.5V 0.5 0.1 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS = -10V 0.0 0 TJ , Junction Temperature ( ° C) -ID , Drain Current (A) 10 20 30 A Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to-Source On Resistance ( Ω ) 0.16 300 EAS , Single Pulse Avalanche Energy (mJ) 250 ID -1.3A -2.2A BOTTOM -2.8A TOP 0.12 200 0.08 I D = -4.9A 150 100 0.04 50 0.00 0 3 6 9 12 15 A 0 25 50 75 100 125 150 -VGS , Gate -to-Source Voltage (V) Starting TJ , Junction Temperature ( °C) Fig 18. Typical On-Resistance Vs. Gate Voltage Fig 19. Maximum Avalanche Energy Vs. Drain Current IRF7319PbF 1400 VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd SHORTED P-Channel 20 ID = -4.9A VDS =-15V 1200 -VGS , Gate-to-Source Voltage (V) A 16 C, Capacitance (pF) 1000 Ciss Coss 800 12 600 8 400 Crss 4 200 0 1 10 100 0 0 10 20 30 40 - V DS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Imp