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PD - 91879A
IRF7207
HEXFET® Power MOSFET
l l l l l l
Generation 5 Technology P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S
1
8 7
A D D D D
S
S G
2
VDSS = -20V
3
6
4
5
RDS(on) = 0.06Ω
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
T op V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-20 -5.4 -4.3 -43 2.5 1.6 0.02 ± 12 -16 140 -5.0 -55 to + 150
Units
V A
W W/°C V V V/ns °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
°C/W
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6/5/00
IRF7207
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -20 ––– ––– ––– -0.7 8.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– -0.011 ––– ––– ––– ––– ––– ––– ––– ––– 15 2.2 5.7 11 24 43 41 780 410 200
Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.06 VGS = -4.5V, ID = -5.4A Ω 0.10 VGS = -2.7V, ID = -2.7A ––– V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -5.4A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = 12V nA 100 VGS = -12V 22 ID = -5.4A 3.3 nC VDS = -10V 8.6 VGS = -4.5V, ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– RD = 10Ω, ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0MHz,
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 42 50 -3.1 A -43 -1.0 63 75 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -3.1A, VGS = 0V TJ = 25°C, I F = -3.1A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L = 9.6mH
RG = 25Ω, IAS = -5.4A.
Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t<10 sec
2
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IRF7207
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
100
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
10
10
-2.25V
20µs PULSE WIDTH T = 25 C
J ° 1 10
-2.25V
1 0.1
1 0.1
20µs PULSE WIDTH T = 150 C
J ° 1 10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
ID = -5.4A
TJ = 25 ° C TJ = 150 ° C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D , Drain-to-Source Current (A)
1.5
1.0
0.5
1 2.0
V DS = -10V 20µs PULSE WIDTH 5.0 3.0 4.0 6.0
0.0 -60 -40 -20
VGS = -4.5V -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7207
1600
-VGS , Gate-to-Source Voltage (V)
1200
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = -5.4A
8
VDS = -10V
C, Capacitance (pF)
Ciss
800
6
C oss
400
4
C rss
2
0 1 10 100
0 0 5 10
FOR TEST CIRCUIT SEE FIGURE 13
20 25 15 30
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
-ID , Drain Current (A) I
TJ = 150 ° C
100us
10
1
TJ = 25 ° C
1ms
0.1 0.4
V GS = 0 V
0.6 0.7 0.9 1.1 1.2 1.4
1
TA = 25 ° C TJ = 150 ° C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7207
6.0
400
EAS , Single Pulse Avalanche Energy (mJ)
5.0
-ID , Drain Current (A)
300
ID -2.4A -4.3A BOTTOM -5.4A TOP
4.0
3.0
200
2.0
100
1.0
0.0 25 50 75 100 125 150
0 25 50 75 100 125 150
TC , Case Temperature
( °C)
Starting TJ , Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
100
Thermal Response (Z thJA )
D = 0.50
10
0.20 0.10 0.05 0.02 0.01
1
SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10
P DM t1 t2 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7207
SO-8 Package Details
D -B -
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M A M
5
8 E -A -
7
A1 B C D E e e1 H K
L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
θ
θ
K x 4 5°
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8°
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8°
-C B 8X 0 .2 5 (.0 1 0 ) NOTES: 1. 2. 3. 4. A1 M C A S B S
0 .1 0 (.0 0 4 )
L θ
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
Part Marking
6
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IRF7207
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 )
8 .1 ( .31 8 ) 7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.0 0 (1 2 .9 9 2 ) M AX .
1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00
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