DirectFet Power MOSFET

www.DataSheet4U.com PD - 97044A IRF6668 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHS compliant containing no lead or bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS VGS RDS(on) Qg tot Qgd 7.8nC 80V max ±20V max 12mΩ@ 10V 22nC MZ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN DirectFET™ ISOMETRIC The IRF6668 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DCDC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Description Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM IS @ TC = 25°C IS @ TC = 70°C ISM Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Max. Units V Pulsed Drain Current Continuous Source Current (Body Diode) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) e f f e f f 80 ±20 55 44 170 81 52 170 A „ TC measured with thermocouple mounted to top (Drain) of part.  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Repetitive rating; pulse width limited by max. junction temperature. Notes: www.irf.com 1 11/4/05 IRF6668 Electrical Characteristic @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG (Internal) td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Min. 80 ––– ––– 3.0 ––– ––– ––– ––– ––– 22 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 0.097 12 4.0 -11 ––– ––– ––– ––– ––– 22 4.8 1.6 7.8 7.8 9.4 12 1.0 19 13 7.1 23 1320 310 76 1400 200 ––– ––– 15 4.9 ––– 20 250 100 -100 ––– 31 ––– ––– 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC Ω Conditions VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 12A g V mV/°C µA nA S VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A VDS = 40V nC VGS = 10V ID = 12A See Fig. 14 VDS = 16V, VGS = 0V VDD = 40V, VGS = 10V ID = 12A RG= 6.2Ω See Fig. 16 VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 64V, f=1.0MHz g VDS = VGS, ID = 100µA Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy Min. ––– Typ. Max. Units ––– 24 mJ Conditions TJ = 25°C, IS = 23A, RG = 25Ω L = 0.088mH. See Fig. 13 Diode Characteristics Parameter VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. ––– ––– ––– Typ. Max. Units ––– 34 40 1.3 51 60 V ns nC Conditions TJ = 25°C, IS = 12A, VGS = 0V g TJ = 25°C, IF = 12A, VDD = 40V di/dt = 100A/µs g Notes: … Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF6668 Absolute Maximum Ratings PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range h h f Parameter Max. 2.8 1.8 89 270 -40 to + 150 Units W °C Thermal Resistance RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted hj ij fj Parameter Typ. ––– 12.5 ––– 1.0 Max. 45 ––– 1.4 ––– Units °C/W 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τC τ1 τ2 τ3 τ3 τC 0.1 τJ C i= τi/R i C i= τi/R i Ri (°C/W) τi (sec) 0.3173 0.000048 0.5283 0.000336 0.5536 0.001469 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 1. Maximum Effective Transient Thermal Impedance, Junction-to-Case  Notes: † Surface mounted on 1 in. square Cu, steady state (still air). ‡ Used double sided cooling, mounted on 1 in. square Cu board PCB with small clip heatsink (still air). ˆ Rθ is measured at TJ of approximately 90°C. Note † Note † Note ‡ www.irf.com 3 IRF6668 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V ID, Drain-to-Source Current (A) BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 100 6.0V 10 10 6.0V ≤60µs PULSE WIDTH Tj = 25°C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10 1 0.1 ≤60µs PULSE WIDTH Tj = 150°C 1 V DS, Drain-to-Source Voltage (V) 10 Fig 2. Typical Output Characteristics 1000 VDS = 10V ≤60µs PULSE WIDTH ID, Drain-to-Source Current (A) Fig 3. Typical Output Characteristics 2.0 ID = 12A Typical RDS(on) (Normalized) VGS = 10V 100 1.5 10 T J = 150°C T J = 25°C T J = -40°C 1.0 1 0.1 2 4 6 8 10 12 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 4. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig 5. Normalized On-Resistance vs. Temperature 12.0 ID= 12A VGS, Gate-to-Source Voltage (V) 10.0 8.0 6.0 4.0 2.0 0.0 VDS= 64V VDS= 40V C, Capacitance (pF) 1000 Ciss Coss 100 Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 0 2 4 6 8 10 12 14 16 18 20 22 24 QG, Total Gate Charge (nC) Fig 6. Typical Capacitance vs.Drain-to-Source Voltage Fig 7. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www.irf.com IRF6668 RDS(on), Drain-to -Source On Resistance (m Ω) 60 ID = 12A 50 Typical RDS(on) ( mΩ) 60 T J = 25°C 50 40 30 20 10 Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V 40 30 20 10 T J = 25°C 0 4 6 8 10 12 14 16 T J = 125°C 0 0 20 40 60 80 100 VGS, Gate -to -Source Voltage (V) ID, Drain Current (A) Fig 8. Typical On-Resistance vs. Gate Voltage 1000 Fig 9. Typical On-Resistance vs. Drain Current 6.0 Typical VGS(th) , Gate threshold Voltage (V) ISD, Reverse Drain Current (A) 100 T J = 150°C T J = 25°C T J = -40°C 5.0 10 4.0 ID = 100µA ID = 250µA 1 VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 3.0 ID = 1.0mA ID = 1.0A 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Typical Source-Drain Diode Forward Voltage 1000 Fig 11. Typical Threshold Voltage vs. Junction Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) OPERATION IN THIS AREA LIMITED BY R DS(on) ID 80 TOP ID, Drain-to-Source Current (A) 100 100µsec 1msec 4.3A 7.6A BOTTOM 23A 60 10 10msec 40 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig12. Maximum Safe Operating Area Fig 13. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6668 Current Regulator Same Type as D.U.T. Id Vds 50KΩ 12V .2µF .3µF Vgs D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Fig 14b. Gate Charge Waveform V(BR)DSS 15V tp DRIVER VDS L RG VGS 20V D.U.T IAS tp + V - DD A 0.01Ω I AS Fig 15b. Unclamped Inductive Waveforms Fig 15a. Unclamped Inductive Test Circuit VDS VGS RG RD 90% D.U.T. + VDS - VDD 10% 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % VGS td(on) tr td(off) tf Fig 16a. Switching Time Test Circuit Fig 16b. Switching Time Waveforms 6 www.irf.com IRF6668 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • �