DirectFET Power MOSFET

www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 7.8nC RDS(on) Qoss 12nC 80V max ±20V max 12mΩ@ 10V Qgs2 1.6nC Qrr 40nC Vgs(th) 4.0V 22nC MZ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MZ DirectFET™ ISOMETRIC Description The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM EAS IAR 60 Typical RDS(on) (mΩ) Max. Units V Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g f f Ãg h VGS, Gate-to-Source Voltage (V) 80 ±20 55 44 170 24 23 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 2 4 6 8 ID= 12A VDS= 64V VDS= 40V A mJ A 50 40 30 20 10 0 4 6 T J = 25°C 8 10 12 T J = 125°C ID = 12A 14 16 10 12 14 16 18 20 22 24 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the DirectFET Website. ƒ Surface mounted on 1 in. square Cu board, steady state. QG, Total Gate Charge (nC) Fig 2. Total Gate Charge vs. Gate-to-Source Voltage „ TC measured with thermocouple mounted to top (Drain) of part. … Repetitive rating; pulse width limited by max. junction temperature. † Starting TJ = 25°C, L = 0.088mH, RG = 25Ω, IAS = 23A. www.irf.com 1 08/28/06 IRF6668PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG(Internal) td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 80 ––– ––– 3.0 ––– ––– ––– ––– ––– 22 ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– 0.097 12 4.0 -11 ––– ––– ––– ––– ––– 22 4.8 1.6 7.8 7.8 9.4 12 1.0 19 13 7.1 23 1320 310 76 ––– ––– 15 4.9 ––– 20 250 100 -100 ––– 31 ––– ––– 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF ns nC Ω Conditions VGS = 0V, ID = 250µA V V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 12A i V mV/°C µA nA S VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A VDS = 40V nC VGS = 10V ID = 12A See Fig. 15 VDS = 16V, VGS = 0V VDD = 40V, VGS = 10V ID = 12A RG = 6.2Ω See Fig. 16 & 17 VGS = 0V VDS = 25V ƒ = 1.0MHz i VDS = VGS, ID = 100µA ––– ––– ––– ––– ––– ––– ––– Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– ––– ––– ––– ––– 34 40 170 1.3 51 60 V ns nC Min. ––– Typ. Max. Units ––– 81 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V i TJ = 25°C, IF = 12A di/dt = 100A/µs i See Fig. 18 Notes: … Repetitive rating; pulse width limited by max. junction temperature. ‡ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRF6668PbF Absolute Maximum Ratings PD @TA = 25°C PD @TA = 70°C PD @TC = 25°C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range e e f Parameter Max. 2.8 1.8 89 270 -40 to + 150 Units W °C Thermal Resistance RθJA RθJA RθJA RθJC RθJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor 10 em km lm fm Parameter Typ. ––– 12.5 20 ––– 1.0 0.022 Max. 45 ––– ––– 1.4 ––– Units °C/W eà W/°C Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τC τ1 τ2 τ3 τ3 τC 0.1 τJ C i= τi/Ri Ci= τi/Ri Ri (°C/W) τi (sec) 0.3173 0.000048 0.5283 0.000336 0.5536 0.001469 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: ‰ Used double sided cooling , mounting pad. Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink. ‹ Rθ is measured at TJ of approximately 90°C. ƒ Surface mounted on 1 in. square Cu (still air). ‰ Mounted to a PCB with small clip heatsink (still air) Š Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) www.irf.com 3 IRF6668PbF 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V ID, Drain-to-Source Current (A) BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 100 6.0V 10 10 6.0V ≤60µs PULSE WIDTH Tj = 25°C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10 1 0.1 ≤60µs PULSE WIDTH Tj = 150°C 1 V DS, Drain-to-Source Voltage (V) 10 Fig 4. Typical Output Characteristics 1000 VDS = 10V ≤60µs PULSE WIDTH ID, Drain-to-Source Current (A) Fig 5. Typical Output Characteristics 2.0 ID = 12A Typical RDS(on) (Normalized) VGS = 10V 100 1.5 10 T J = 150°C T J = 25°C T J = -40°C 1.0 1 0.1 2 4 6 8 10 12 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 6. Typical Transfer Characteristics 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Fig 7. Normalized On-Resistance vs. Temperature 60 T J = 25°C 50 Typical RDS(on) ( mΩ) C oss = C ds + C gd C, Capacitance (pF) 1000 Ciss Coss 40 30 20 10 0 Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V 100 Crss 10 1 10 VDS, Drain-to-Source Voltage (V) 100 0 20 40 60 80 100 ID, Drain Current (A) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance vs. Drain Current 4 www.irf.com IRF6668PbF 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) T J = 150°C T J = 25°C T J = -40°C 100 100µsec 1msec 10 10 10msec 1 VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) , Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 6.0 5.0 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 4.0 ID ID ID ID = 100µA = 250µA = 1.0mA = 1.0A 3.0 2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature ID 80 TOP 4.3A 7.6A BOTTOM 23A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6668PbF Current Regulator Same Type as D.U.T. Id Vds 50KΩ 12V .2µF .3µF Vgs D.U.T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform V(BR)DSS 15V tp DRIVER VDS L VGS RG D.U.T IAS + V - DD A 20V tp 0.01Ω I AS Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit LD VDS 90% + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% VDS 10% VGS td(on) tr td(off) tf Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms 6 www.irf.com IRF6668PbF