AUTOMOTIVE MOSFET

PD - 97046 AUTOMOTIVE MOSFET Features l l l l l l IRF3805PbF IRF3805SPbF IRF3805LPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 3.3mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G S ID = 75A www.DataSheet4U.com Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM P D @TC = 25°C V GS E AS (Thermally limited) E AS (Tested ) IAR E AR TJ TSTG TO-220AB IRF3805PbF D2Pak IRF3805SPbF Max. 210 150 75 890 300 2.0 ± 20 TO-262 IRF3805LPbF Units A Continuous Drain Current, V GS @ 10V (Silicon Limited) Continuous Drain Current, V GS @ 10V (Silicon Limited) Continuous Drain Current, V GS @ 10V (Package limited) Pulsed Drain Current ™ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentÙ Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw W W/°C V mJ A mJ h 650 940 See Fig.12a, 12b, 15, 16 -55 to + 175 g i °C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case k Parameter Typ. Max. 0.5 ––– 62 40 Case-to-Sink, Flat Greased Surface Junction-to-Ambient ik i ––– 0.50 ––– ––– l Units °C/W Junction-to-Ambient (PCB Mount) jk www.irf.com 1 9/20/05 IRF3805/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– 2.0 75 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.051 2.6 ––– ––– ––– ––– ––– ––– 190 52 72 150 20 93 87 4.5 7.5 7960 1260 630 4400 980 1550 ––– ––– 3.3 4.0 ––– 20 250 200 -200 290 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC nA V mΩ V V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 75A VDS = 25V, ID = 75A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 75A VDS = 44V VGS = 10V VDD = 28V ID = 75A RG = 2.6 Ω VGS = 10V V/°C Reference to 25°C, ID = 1mA VDS = VGS, ID = 250µA e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz G D S VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 36 47 75 A 890 1.3 54 71 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 28V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF3805/S/LPbF 1000 TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 100 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 10 0.1 4.5V ≤ 60µs PULSE WIDTH Tj = 175°C 10 100 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 200 TJ = 175°C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current(Α) TJ = 25°C 160 TJ = 175°C 100.0 120 10.0 TJ = 25°C 1.0 80 VDS = 20V 0.1 4.0 5.0 6.0 40 ≤ 60µs PULSE WIDTH 7.0 8.0 VDS = 10V 380µs PULSE WIDTH 0 0 20 40 60 80 100 120 140 160 180 ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRF3805/S/LPbF 14000 12000 10000 8000 6000 4000 2000 0 1 10 100 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID= 75A VGS, Gate-to-Source Voltage (V) VDS = 44V VDS= 28V 16 C, Capacitance (pF) Ciss 12 8 Coss Crss 4 0 0 50 100 150 200 250 300 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) TJ = 175°C 100.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 10msec 10 1msec 10.0 TJ = 25°C 1.0 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Tc = 25°C Tj = 175°C Single Pulse 1 10 100 1000 0.1 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3805/S/LPbF 240 LIMITED BY PACKAGE 200 ID , Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = 75A VGS = 10V 160 120 80 40 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 0.01 τJ Ri (°C/W) τi (sec) 0.2653 0.001016 0.2347 0.012816 τ1 0.001 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3805/S/LPbF EAS, Single Pulse Avalanche Energy (mJ) 15V 2000 VDS L DRIVER 1600 ID 15A 20A BOTTOM 75A TOP RG VGS 20V D.U.T IAS tp + V - DD 1200 A 0.01Ω 800 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 400 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 4.5 VG 4.0 ID = 250µA 3.5 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 3.0 2.5 50KΩ 12V .2µF .3µF 2.0 D.U.T. VGS 3mA + V - DS 1.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF3805/S/LPbF 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 100 0.01 0.05 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 10 0.10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 800 EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF3805/S/LPbF Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +