HEXFET Power MOSFET

PD - 96988A AUTOMOTIVE MOSFET IRF2903Z IRF2903ZS IRF2903ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS(on) = 2.4mΩ G S Description Specifically designed for Automotive applications, D this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of S D this design are a 175°C junction operating temperaG ture, fast switching speed and improved repetitive avalanche rating . These features combine to make TO-220AB this design an extremely efficient and reliable device IRF2903Z for use in Automotive applications and a wide variety G of other applications. Gate Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current ID = 75A D D G D S G D S D2Pak IRF2903ZS D TO-262 IRF2903ZL S Drain Max. 260 180 75 1020 290 2.0 ± 20 290 820 Source Units A ™ PD @TC = 25°C Power Dissipation Linear Derating Factor VGS EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Tested Value Avalanche CurrentÙ Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw EAS (Thermally limited) Single Pulse Avalanche Energyd W W/°C V mJ A mJ h g i See Fig.12a, 12b, 15, 16 -55 to + 175 °C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case k Parameter Typ. Max. 0.51 ––– 62 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ik i jk ––– 0.50 ––– ––– Junction-to-Ambient (PCB Mount, steady state) www.irf.com 1 8/26/05 IRF2903Z/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 30 ––– ––– 2.0 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.021 1.9 ––– ––– ––– ––– ––– ––– 160 51 58 24 100 48 37 4.5 7.5 6320 1980 1100 5930 2010 3050 ––– ––– 2.4 4.0 ––– 20 250 200 -200 240 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– V V/°C mΩ V S µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A VDS = VGS, ID = 150µA VDS = 10V, ID = 75A VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 75A VDS = 24V VGS = 10V VDD = 15V ID = 75A RG = 3.2 Ω VGS = 10V e nC e e ns nH pF Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 24V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 24V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ù Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 34 29 75 A 1020 1.3 51 44 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 15V di/dt = 100A/µs e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) e 2 www.irf.com IRF2903Z/S/L 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) BOTTOM 100 10 4.5V ≤ 60µs PULSE WIDTH Tj = 175°C 10 0.1 1 10 100 1000 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 240 Gfs, Forward Transconductance (S) TJ = 25°C 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 180 ID, Drain-to-Source Current (A) TJ = 175°C ID, Drain-to-Source Current(Α) 100.0 TJ = 175°C 10.0 1.0 TJ = 25°C VDS = 25V ≤ 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VDS = 10V 380µs PULSE WIDTH VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRF2903Z/S/L 12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID= 75A VGS, Gate-to-Source Voltage (V) VDS = 24V VDS= 15V 10000 16 C, Capacitance (pF) 8000 Ciss 6000 12 8 4000 Coss 2000 4 Crss 0 1 10 100 0 0 40 80 120 160 200 240 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 1msec 100.0 TJ = 175°C 1000 100µsec 100 10msec 10.0 TJ = 25°C 1.0 10 LIMITED BY PACKAGE 1 DC Tc = 25°C Tj = 175°C Single Pulse 0.1 1.0 10.0 100.0 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF2903Z/S/L 300 LIMITED BY PACKAGE 250 ID , Drain Current (A) RDS(on) , Drain-to-Source On Resistance 2.0 ID = 75A VGS = 10V 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) 1.5 (Normalized) 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.08133 0.000044 0.2408 0.000971 0.18658 0.008723 τ1 0.01 τ2 Ci= τi/Ri Ci τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2903Z/S/L 1200 EAS, Single Pulse Avalanche Energy (mJ) 15V 1000 VDS L DRIVER ID 26A 42A BOTTOM 75A TOP 800 RG VGS 20V D.U.T IAS tp + V - DD A 600 0.01Ω 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 4.5 ID = 1.0A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 VG ID = 1.0mA ID = 250µA ID = 150µA Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 100 125 150 175 TJ , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF2903Z/S/L 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 0.01 0.05 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF2903Z/S/L Driver Gate Drive D.U.T + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Wav