AUTOMOTIVE MOSFET

www.DataSheet4U.com PD - 94645A AUTOMOTIVE MOSFET IRF1405Z IRF1405ZS IRF1405ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB IRF1405Z D2Pak IRF1405ZS TO-262 IRF1405ZL Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 150 110 75 600 230 1.5 ± 20 Units A ™ W W/°C V mJ A mJ Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) Single Pulse Avalanche Energy Tested Value d IAR EAR TJ TSTG Avalanche Current Ù h 270 420 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g °C 300 (1.6mm from case ) 10 lbf in (1.1N m) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state) y y Typ. ––– 0.50 ––– ––– Max. 0.65 ––– 62 40 Units °C/W i HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 08/29/03 IRF1405Z/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 55 ––– ––– 2.0 88 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.049 3.7 ––– ––– ––– ––– ––– ––– 120 31 46 18 110 48 82 4.5 7.5 4780 770 410 2730 600 910 ––– ––– 4.9 4.0 ––– 20 250 200 -200 180 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– ––– pF ns nC nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A e V S µA VDS = VGS, ID = 250µA VDS = 25V, ID = 75A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 75A VDS = 44V VGS = 10V VDD = 25V ID = 75A RG = 4.4Ω VGS = 10V e e D G S Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 30 30 75 A 600 1.3 46 45 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 75A, VGS = 0V TJ = 25°C, IF = 75A, VDD = 25V di/dt = 100A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical max. junction temperature. (See fig. 11). repetitive avalanche performance. ‚ Limited by TJmax, starting TJ = 25°C, L = 0.10mH † This value determined from sample failure population. RG = 25Ω, IAS = 75A, VGS =10V. Part not 100% tested to this value in production. recommended for use above this value. ‡ This is applied to D2Pak, when mounted on 1" square PCB ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ( FR-4 or G-10 Material ). For recommended footprint and „ Coss eff. is a fixed capacitance that gives the same soldering techniques refer to application note #AN-994. charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 www.irf.com IRF1405Z/S/L 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 100 BOTTOM ID, Drain-to-Source Current (A) 100 BOTTOM 4.5V 10 4.5V 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current (Α) T J = 150°C 100 175 150 125 100 T J = 175°C 75 50 25 0 T J = 25°C 10 T J = 25°C VDS = 25V 20µs PULSE WIDTH 1 4 6 8 10 12 0 25 50 75 100 125 150 175 200 VGS, Gate-to-Source Voltage (V) ID,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRF1405Z/S/L 100000 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12.0 ID= 75A 10.0 VDS= 44V VDS= 28V C, Capacitance(pF) 10000 8.0 Ciss 6.0 1000 Coss Crss 4.0 2.0 100 1 10 100 0.0 0 20 40 60 80 100 120 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 T J = 175°C 10.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 100µsec 10 Tc = 25°C Tj = 175°C Single Pulse 1 1 10 1msec 10msec 100 1000 1.00 T J = 25°C VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1405Z/S/L 150 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 125 ID, Drain Current (A) Limited By Package ID = 75A VGS = 10V 2.0 100 75 1.5 50 1.0 25 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1405Z/S/L 15V 500 EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 400 ID TOP 31A 53A BOTTOM 75A RG VGS 20V D.U.T IAS tp + V - DD 300 A 0.01Ω 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy vs. Drain Current 10 V QGS VG QGD 4.0 VGS(th) Gate threshold Voltage (V) 3.5 Charge 3.0 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.5 ID = 250µA 2.0 50KΩ 12V .2µF .3µF 1.5 D.U.T. VGS 3mA + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRF1405Z/S/L 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 100 0.05 10 0.10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 300 EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cy