PC133 SDRAM Unbuffered DIMM

www.DataSheet4U.com 16Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635AT6 Series DESCRIPTION The Hynix HYM71V16635AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB. The Hynix HYM71V16635AT6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes memory. The Hynix HYM71V16635AT6 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES • • • • PC133/PC100MHz support 168pin SDRAM Unbuffered DIMM Serial Presence Detect with EEPROM 1.25” (31.75mm) Height PCB with double sided components Single 3.3±0.3V power supply - 1, 2, 4 or 8 or Full page for Sequential Burst • • All device pins are compatible with LVTTL interface - 1, 2, 4 or 8 for Interleave Burst Data mask function by DQM • Programmable CAS Latency ; 2, 3 Clocks • • • • • • SDRAM internal banks : four banks Module bank : two physical bank Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type ORDERING INFORMATION Part No. HYM71V16M635AT6-K HYM71V16M635AT6-H HYM71V16M635ALT6-K HYM71V16M635ALT6-H 133MHz 4 Banks 4K Low Power Clock Frequency Internal Bank Ref. Power Normal SDRAM Package Plating TSOP-II Gold This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.6 / Mar. 2003 2 www.DataSheet4U.com PC133 SDRAM Unbuffered DIMM HYM71V16635AT6 Series PIN DESCRIPTION PIN CK0~CK3 CKE0, CKE1 /S0 ~ /S3 BA0, BA1 A0 ~ A11 /RAS, /CAS, /WE DQM0~DQM7 DQ0 ~ DQ63 VCC VSS SCL SDA SA0~2 WP NC PIN NAME Clock Inputs Clock Enable Chip Select SDRAM Bank Address Address Row Address Strobe, Column Address Strobe, Write Enable Data Input/Output Mask Data Input/Output Power Supply (3.3V) Ground SPD Clock Input SPD Data Input/Output SPD Address Input Write Protect for SPD No Connection DESCRIPTION The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CK, CKE and DQM Selects bank to be activated during /RAS activity Selects bank to be read/written during /CAS activity Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8 Auto-precharge flag : A10 /RAS, /CAS and /WE define the operation Refer function truth table for details Controls output buffers in read mode and masks input data in write mode Multiplexed data input / output pin Power supply for internal circuits and input buffers Ground Serial Presence Detect Clock input Serial Presence Detect Data input/output Serial Presence Detect Address Input Write Protect for Serial Presence Detect on DIMM No connection Rev. 1.6 / Mar. 2003 3 www.DataSheet4U.com PC133 SDRAM Unbuffered DIMM HYM71V16635AT6 Series PIN ASSIGNMENTS FRONT SIDE PIN NO. 1 2 3 4 5 6 7 8 9 10 BACK SIDE PIN NO. 85 86 87 88 89 90 91 92 93 94 FRONT SIDE PIN NO. 41 42 43 44 45 46 47 48 49 50 51 52 BACK SIDE PIN NO. 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 NAME VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NAME VSS DQ32 DQ33 DQ34 DQ35 VCC DQ36 DQ37 DQ38 DQ39 NAME VCC CK0 VSS NC /S2 DQM2 DQM3 NC VCC NC NC NC NC VSS DQ16 DQ17 DQ18 DQ19 VCC DQ20 NC NC NC VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VCC DQ28 DQ29 DQ30 DQ31 VSS CK1 NC WP SDA SCL VCC NAME *CK2 NC VSS CKE0 /S3 DQM6 DQM7 NC VCC NC NC NC NC VSS DQ48 DQ49 DQ50 DQ51 VCC DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VCC DQ60 DQ61 DQ62 DQ63 VSS *CK3 NC SA0 SA1 SA2 VCC Architecture Key 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 NC NC VSS NC NC VCC /WE DQM0 DQM1 /S0 NC VSS A0 A2 A4 A6 A8 A10/AP BA1 VCC 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 Voltage Key DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VCC DQ46 DQ47 NC NC VSS NC NC VCC /CAS DQM4 DQM5 /S1 /RAS VSS A1 A3 A5 A7 A9 BA0 A11 VCC 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Note : * CK2 and CK3 are connected with termination R/C (Refer to the block diagram) Rev. 1.6 / Mar. 2003 4 www.DataSheet4U.com PC133 SDRAM Unbuffered DIMM HYM71V16635AT6 Series BLOCK DIAGRAM DQM0 CS LDQM D0 DQM1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D4 UDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQM0 CS LDQM D1 DQM1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D5 UDQM DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQM0 CS LDQM D2 DQM1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D6 UDQM DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQM0 CS LDQM D3 DQM1 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 CS LDQM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 D7 UDQM DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 RAS CAS WE A0-A11 BA0/BA1 Vcc Vss RAS:D0 to D7 CAS:D0 to D7 WE:D0 to D7 A0-A11:D0 to D7 BA0/BA1:D0 to D7 D0 to D7 D0 to D7 CKE0 CKE1 CK0 CK1 CK0 CK1 CKE:D0 to D3 CKE:D4 to D7 CK: 4 SDRAMs CK: 4 SDRAMs SCL WP 47K Ohms SERIAL PD SDA A0 A1 A2 Note : 1. The serial resistor values of DQs are 10ohms Rev. 1.6 / Mar. 2003 5 www.DataSheet4U.com PC133 SDRAM Unbuffered DIMM HYM71V16635AT6 Series SERIAL PRESENCE DETECT BYTE NUMBER BYTE0 BYTE1 BYTE2 BYTE3 BYTE4 BYTE5 BYTE6 BYTE7 BYTE8 BYTE9 BYTE10 BYTE11 BYTE12 BYTE13 BYTE14 BYTE15 BYTE16 BYTE17 BYTE18 BYTE19 BYTE20 BYTE21 BYTE22 BYTE23 BYTE24 BYTE25 BYTE26 BYTE27 BYTE28 BYTE29 BYTE30 BYTE31 BYTE32 BYTE33 BYTE34 BYTE35 BYTE36 ~61 BYTE62 BYTE63 BYTE64 BYTE65 ~71 FUNCTION DESCRIPTION # of Bytes Written into Serial Memory at Module Manufacturer Total # of Bytes of SPD Memory Device Fundamental Memory Type # of Row Addresses on This Assembly # of Column Addresses on This Assembly # of Module Banks on This Assembly Data Width of This Assembly Data Width of This Assembly (Continued) Voltage Interface Standard of This Assembly SDRAM Cycle Time @/CAS Latency=3 Access Time from Clock @/CAS Latency=3 DIMM Configuration Type Refresh Rate/Type Primary SDRAM Width Error Checking SDRAM Width Minimum Clock Delay Back to Back Random Column Address Burst Lenth Supported # of Banks on Each SDRAM Device SDRAM Device Attributes, /CAS Lataency SDRAM Device Attributes, /CS Lataency SDRAM Device Attributes, /WE Lataency SDRAM Module Attributes SDRAM Device Attributes, General SDRAM Cycle Time @/CAS Latency=2 Access Time from Clock @/CAS Latency=2 SDRAM Cycle Time @/CAS Latency=1 Access Time from Clock @/CAS Latency=1 Minimum Row Precharge Time (tRP) Minimum Row Active to Row Active Delay (tRRD) Minimum /RAS to /CAS Delay (tRCD) Minimum /RAS Pulse Width (tRAS) Module Bank Density Command and Address Signal Input Setup Time Command and Address Signal Input Hold Time Data Signal Input Setup Time Data Signal Input Hold Time Superset Information (may be used in future) SPD Revision Checksum for Byte 0~62 Manufacturer JEDEC ID Code ....Manufacturer JEDEC ID Code 1.5ns 0.8ns 1.5ns 0.8ns Intel SPD 1.2B Hynix JEDED ID Unused HSI (Korea Area) HSA (United States Area) HSE (Europe Area) HSJ (Japan Area) HSS(Singapore) ASIA Area 66h ADh FFh 0*h 1*h 2*h 3*h 4*h 5*h 7.5ns 5.4ns None 15.625us / Self Refresh Supported x16 None tCCD = 1 CLK 1,2,4,8,Full Page 4 Banks /CAS Latency=2,3 /CS Latency=0 /WE Latency=0 Neither Buffered nor Registered +/- 10% voltage tolerence, Burst Read Single Bit Write, Precharge All, Auto Precharge, Early RAS Precharge 7.5ns 5.4ns 15ns 15ns 15ns 45ns 64MB 1.5ns 0.8ns 1.5ns 0.8ns 15h 08h 15h 08h 00h 12h 3, 8 10ns 6ns 20ns 15ns 20ns 45ns 75h 54h 00h 00h 0Fh 0Fh 0Fh 2Dh 10h 15h 08h 15h 08h FUNCTION -K 128 Bytes 256 Bytes SDRAM 12 9 2 Bank 64 Bits LVTTL 7.5ns 5.4ns 75h 54h 00h 80h 10h 00h 01h 8Fh 04h 06h 01h 01h 00h 0Eh A0h 60h 00h 00h 14h 0Fh 14h 2Dh 2 VALUE NOTE -H -K 80h 08h 04h 0Ch 09h 02h 40h 00h 01h -H 1 75h 54h A7h BYTE72 Manufacturing Location 11 Rev. 1.6 / Mar. 2003 6 www.DataSheet4U.com PC133 SDRAM Unbuffered DIMM HYM71V16635AT6 Series Continued BYTE NUMBER BYTE73 BYTE74 BYTE75 BYTE76 BYTE77 BYTE78 BYTE79 BYTE80 BYTE81 BYTE82 BYTE83 BYTE84 BYTE85 BYTE86 ~90 BYTE91 BYTE92 BYTE93 BYTE94 BYTE95 ~98 BYTE99 ~125 BYTE126 BYTE127 BYTE128 ~256 FUNCTION DESCRIPTION Manufacturer’s Part Number (Component) Manufacturer’s Part Number (128Mb based) Manufacturer’s Part Number (Voltage Interface) Manufacturer’s Part Number (Memory Width) ....Manufacturer’s Part Number (Memory Width) Manufacturer’s Part Number (Data Width) ....Manufacturer’s Part Number (Data Width) Manufacturer’s Part Number (Refresh, SDRAM Bank) Manufacturer’s Part Number (Generation) Manufacturer’s Part Number (Package Type) Manufacturer’s Part Number (Component Configuration) Manufacturer’s Part Number