(HSMP-38xx / HSMP-48xx) Surface Mount PIN Diodes

www.DataSheet4U.com Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and SOT-143 Packages Single and Dual Versions Tape and Reel Options Available • Low Failure in Time (FIT) Rate[1] Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet. required. The HSMP-48XX series are special products featuring ultra low parasitic inductance in the SOT-23 package, specifically designed for use at frequencies which are much higher than the upper limit for conventional SOT-23 PIN diodes. The HSMP-4810 diode is a low distortion attenuating PIN designed for operation to 3 GHz. The HSMP-4820 diode is ideal for limiting and low inductance switching applications up to 1.5 GHz. The HSMP-4890 is optimized for low current switching applications up to 3 GHz. The HSMP-386X series of general purpose PIN diodes are designed for two classes of applications. The first is attenuators where current consumption is the most important design consideration. The second application for this series of diodes is in switches where low cost is the driving issue for the designer. The HSMP-386X series Total Capacitance (CT) and Total Resistance (RT) are typical specifications. For applications that require guaranteed performance, the general purpose HSMP-383X series is recommended. For low distortion Package Lead Code Identification SINGLE #0 SERIES COMMON ANODE #2 COMMON CATHODE #3 UNCONNECTED PAIR #4 DUAL ANODE #5 DUAL CATHODE Description/Applications The HSMP-380X and HSMP-381X series are specifically designed for low distortion attenuator applications. The HSMP-382X series is optimized for switching applications where ultra-low resistance is required. The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications from 50 MHz to 1.5 GHz. The HSMP-389X series is optimized for switching applications where low resistance at low current and low capacitance are #A #B attenuators, the HSMP-380X or -381X series are recommended. For high performance switching applications, the HSMP-389X series is recommended. A SPICE model is not available for PIN diodes as SPICE does not provide for a key PIN diode characteristic, carrier lifetime. www.DataSheet4U.com 2 Absolute Maximum Ratings[1] TA = 25°C Symbol If Pt Piv Tj TSTG Parameter Forward Current (1 ms Pulse) Total Device Dissipation Peak Inverse Voltage Junction Temperature Storage Temperature Units Absolute Maximum Amp mW [2] — °C °C 1 250 Same as VBR 150 -65 to 150 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. CW Power Dissipation at TLEAD = 25°C. Derate to zero at maximum rated temperature. PIN Attenuator Diodes Electrical Specifications TA = 25°C (Each Diode) Nearest Equivalent Minimum Maximum Maximum Minimum Maximum Axial Lead Breakdown Series Total High Low Part No. Voltage Resistance Capacitance Resistance Resistance 5082VBR (V) RS (Ω) CT (pF) RH (Ω) RL (Ω) 3080 100 2.0 0.37 1000 8 Part Number HSMP3800 3802 3804 3810 3812 3813 3814 Package Marking Code[1] D0 D2 D4 E0 E2 E3 E4 Lead Code Configuration 0 2 4 0 2 3 4 Single Series Common Cathode Single Series Common Anode Common Cathode 3081 100 3.0 0.35 1500 10 Test Conditions VR = VBR Measure IR ≤ 10 µA IF = 100 mA f = 100 MHz VR = 50 V f = 1 MHz IF = 0.01 mA IF = 20 mA f = 100 MHz f= 100 MHz PIN Switching Diodes Electrical Specifications TA = 25°C Nearest Equivalent Axial Lead Part No. 50823188 Minimum Breakdown Voltage VBR (V) 50 Maximum Series Resistance RS (Ω) 0.6* Maximum Total Capacitance CT (pF) 0.8* Maximum Shunt Mode Harmonic Distortion Hmd (dBc) — Part Number HSMP3820 3822 3823 3824 3880 3890 3892 3893 3894 3895 Package Marking Code[1] F0 F2 F3 F4 S0 G0 G2 G3 G4 G5 Lead Code Configuration 0 2 3 4 0 0 2 3 4 5 Single Series Common Anode Common Cathode Single Single Series Common Anode Common Cathode Unconnected Pair — — 100 100 6.5 2.5 0.40 0.30** –55 — Test Conditions VR = VBR Measure IR ≤ 10 µA IF = 5 mA f = 100 MHz IF = 10 mA* VR = 50 V f = 1 MHz VR = 20 V* VR = 5 V** 2 fo, Zo = 50 W f o = 400 MHz Pin = +30 dBm 0 V bias Note: 1. Package marking code is white. www.DataSheet4U.com 3 PIN General Purpose Diodes, Electrical Specifications TA = 25°C Nearest Equivalent Axial Lead Part No. 50823077 Minimum Breakdown Voltage VBR (V) 200 Maximum Series Resistance RS (Ω) 1.5 Maximum Total Capacitance CT (pF) 0.3 Part Number HSMP3830 3832 3833 3834 Package Marking Code[1] K0 K2 K3 K4 Lead Code 0 2 3 4 Configuration Single Series Common Anode Common Cathode Test Conditions VR = VBR Measure IR ≤ 10 mA IF = 100 mA f = 100 MHz VR = 50 V f = 1 MHz High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes, Electrical Specifications TA = 25°C Part Number HSMP4810 4820 4890 Package Marking Code EB FA GA Minimum Breakdown Voltage VBR (V) 100 50 100 VR = VBR Measure IR ≤ 10 µA Maximum Series Resistance RS (Ω) 3.0 0.6* 2.5** IF = 100 mA IF = 10 mA* IF = 5 mA** Typical Total Capacitance CT (pF) 0.35 0.75* 0.33 VR = 50 V f = 1 MHz VR = 20 V* Maximum Total Capacitance CT (pF) 0.4 1.0 0.375 VR = 50 V f = 1 MHz VR = 0 V Typical Total Inductance LT (nH) 1.0 1.0* 1.0 f = 500 MHz – 3 GHz VR = 20 V* Lead Code B A A Configuration Dual Cathode Dual Anode Dual Anode Application Attenuator Limiter Switch PIN General Purpose Diodes, Typical Specifications TA = 25°C Part Number HSMP3860 3862 3863 3864 Test Conditions Code Marking Code[1] L0 L2 L3 L4 Lead Code 0 2 3 4 Minimum Breakdown Voltage VBR (V) 50 Typical Series Resistance RS (Ω) 3.0/1.5* Typical Total Capacitance CT (pF) 0.20 Configuration Single Series Common Anode Common Cathode VR = VBR Measure IR ≤ 10 µA IF = 10 mA f = 100 MHz *IF = 100 mA VR = 50 V f = 1 MHz Typical Parameters at TA = 25°C Part Number HSMP380X 381X 382X 383X 388X 389X Test Conditions Series Resistance RS (Ω) 55 75 1.5 20 3.8 3.8 IF = 1 mA f = 100 MHz IF = 10 mA* Carrier Lifetime τ (ns) 1800 1500 70* 500 2500 200* IF = 50 mA IR = 250 mA IF = 10 mA* IR = 6 mA* Reverse Recovery Time Trr (ns) 500 300 7 80 550 – VR = 10 V IF = 20 mA 90% Recovery Total Capacitance CT (pF) 0.32 @ 50 V 0.27 @ 50 V 0.60 @ 20 V 0.20 @ 50 V 0.30 @ 50 V 0.20 @ 5 V Note: 1. Package marking code is white. www.DataSheet4U.com 4 Typical Parameters at TA = 25°C (unless otherwise noted), Single Diode 0.45 TOTAL CAPACITANCE (pF) 0.35 TOTAL CAPACITANCE (pF) 10000 0.40 0.35 1 MHz 0.30 0.25 0.20 frequency>100 MHz 0.15 0 2 4 6 8 10 12 14 16 18 20 30 MHz HSMP-381x, /HSMP-4810 RESISTANCE (OHMS) 0.30 1 MHz 0.25 100 MHz 0.20 1 GHz 1000 HSMP-383x, -386x 100 10 1 HSMP-382x, -4820 0.15 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) 0.1 0.01 0.1 1 10 100 IF – FORWARD BIAS CURRENT (mA) Figure 1. RF Capacitance vs. Reverse Bias, HSMP-3810 Series. Figure 2. RF Capacitance vs. Reverse Bias, HSMP-3830 Series. Figure 3. Resistance at 25°C vs. Forward Bias Current. 3000 1000 RF RESISTANCE (OHMS) 10000 TA = +85°C TA = +25°C TA = –55°C TA = +85°C TA = +25°C TA = –55°C 1.4 1.2 CAPACITANCE (pF) RF RESISTANCE (OHMS) 1000 1 0.8 0.6 0.4 0.2 HSMP-382X 100 100 10 10 HSMP-3880 HSMP-3800 HSMP-381X HSMP-3830 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 100 IF – FORWARD BIAS CURRENT (mA) 0 0 10 20 HSMP-3890 30 40 50 IF – FORWARD BIAS CURRENT (mA) VR – REVERSE VOLTAGE (V) Figure 4. RF Resistance vs. Forward Bias Current for HSMP-3800. Figure 5. RF Resistance vs. Forward Bias Current for HSMP-3810/ HSMP-4810. Figure 6. Capacitance vs. Reverse Voltage. INPUT INTERCEPT POINT (dBm) INPUT INTERCEPT POINT (dBm) Diode Mounted as a 110 Series Attenuator in a 50 Ohm Microstrip 100 and Tested at 123 MHz 90 80 70 60 50 40 1000 100 10 HSMP-3810 HSMP-3830 Diode Mounted as a Series Attenuator in a 115 50 Ohm Microstrip and Tested at 123 MHz 110 105 HSMP-3880 100 HSMP-3820 95 HSMP-3830 90 HSMP-3890 85 1 10 30 Trr – REVERSE RECOVERY TIME (ns) 120 120 100 HSMP-382X VR = 2V VR = 5V 10 VR = 10V HSMP-3830 1 10 20 FORWARD CURRENT (mA) 30 DIODE RF RESISTANCE (OHMS) IF – FORWARD BIAS CURRENT (mA) Figure 7. 2nd Harmonic Input Intercept Point vs. Diode RF Resistance for Attenuator Diodes. Figure 8. 2nd Harmonic Input Intercept Point vs. Forward Bias Current for Switch Diodes. Figure 9. Reverse Recovery Time vs. Forward Current for Various Reverse Voltages. HSMP-3820 Series. www.DataSheet4U.com 5 Typical Parameters (continued) REVERSE RECOVERY TIME (nS) HSMP-3830 VR = 5V VR = 10V TRR - REVERSE RECOVERY TIME (nS) Trr - REVERSE RECOVERY TIME (nS) 1000 VR = 5V 100 VR = 10V VR = 20V 1000 900 800 700 600 500 400 300 200 200 160 VR = –2V 120 80 VR = 20V VR = –5V VR = –10V 15 20 25 30 40 0 10 10 10 20 FORWARD CURRENT (mA) 30 100 10 15 20 25 30 FORWARD CURRENT (mA) FORWARD CURRENT (mA) Figure 10. Reverse Recovery Time vs. Forward Current for Various Reverse Voltage. HSMP-3830 Series. 100 IF – FORWARD CURRENT (mA) Figure 11. Typical Reverse Recovery Time vs. Reverse Voltage. HSMP-3880 Series. 100 IF – FORWARD CURRENT (mA) Figure 12. Typical Reverse Recovery Time vs. Reverse Voltage. HSMP-3890 Series. 100 IF – FORWARD CURRENT (mA) HSMP-3800 10 HSMP-3810 HSMP-4810 10 HSMP-382X HSMP-482X 10 1 1 1 0.1 125°C 0.01 0 0.2 0.4 25°C –50°C 0.6 0.8 1.0 1.2 0.1 125°C 25°C –50°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 125°C 25°C –50°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 VF – FORWARD VOLTAGE (mA) VF – FORWARD VOLTAGE (mA) VF – FORWARD VOLTAGE (mA) Figure 13. Forward Current vs. Forward Voltage. HSMP-3800 Series. Figure 14. Forward Current vs. Forward Voltage. HSMP-3810 and HSMP-4810 Series. Figure 15. Forward Current vs. Forward Voltage. HSMP-3820 and HSMP-4820