SILICON PLANAR HIGH SPEED SWITCHING DIODES
I
HD2A HD3A HD4A
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage
Forward Current Power Dissipation at T amb = 25°C Operating and Storage Temperature Range
VR IF
P
TOT
75
100
V
mA mW
o
330
–55 to + 1 5 0
tj:tstg
c
ELECTRICAL CHARACTERISTICS (at Tj = 25°C unless otherwise stated)
PARAMETER Breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL MIN. MAX. UNIT CONDITIONS
V BR
85
0.5 0.715 1.0 1.0 60 4
Typ.
V
V
IR = 100µA
lF = 1 m A lF= 1 0 m A V R= 7 5 V o V R =75V, TJ = 1 2 5 C V R=O, f=lMHz
VF
IR
CT
t rr
v
µA µA pF
6
ns
I F = l0mA, I R = 10mA I rr = 1 mA
