Silicon N/P Channel Power MOS FET Power Switching

www.DataSheet4U.com HAT3021R Silicon N/P Channel Power MOS FET Power Switching REJ03G0415-0200 Rev.2.00 Oct.06.2004 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 7 8 D D 5 6 D D 65 2 G 4 G 8 7 3 1 2 S1 S3 4 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Ratings Nch 80 ±20 3.4 20.4 3.4 1.5 150 Pch –80 ±20 –2.6 –15.6 –2.6 1.5 Unit V V A A A W °C °C Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.2.00, Oct.06.2004, page 1 of 10 HAT3021R Electrical Characteristics (Ta = 25°C) • N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 ±20 — — 1.0 — — 4.2 — — — — — — — — — — — — Typ — — — — — 90 100 7.0 400 57 24 7.3 1.1 1.3 6.0 4.0 39 3.5 0.83 30 Max — — ± 10 1 2.5 115 145 — — — — — — — — — — — 1.08 — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 1.7 A, VGS = 10 V Note4 ID = 1.7 A, VGS = 4.5 V Note4 ID = 1.7 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 3.4 A VGS = 10 V, ID = 1.7 A VDD ≅ 30 V RL = 17.6 Ω Rg = 4.7 Ω IF = 3.4 A, VGS = 0 Note4 IF = 3.4 A, VGS = 0 diF/ dt = 100 A/ µs Rev.2.00, Oct.06.2004, page 2 of 10 HAT3021R • P Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min –80 ±20 — — –1.0 — — 2.0 — — — — — — — — — — — — Typ — — — — — 165 200 3.3 930 90 56 16 2.1 2.4 20 12 40 5.5 –0.83 30 Max — — ±10 –1 –2.5 210 290 — — — — — — — — — — — –1.08 — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –80 V, VGS = 0 VDS = –10 V, I D = –1 mA ID = –1.3 A, VGS = –10 V Note4 ID = –1.3 A, VGS = – 4.5 V Note4 ID = –1.3 A, VDS = –10 V Note4 VDS = –10 V VGS = 0 f = 1MHz VDD = –25 V VGS = –10 V ID = -2.6 A VGS = –10 V, ID = –1.3 A VDD ≈ –30 V RL = 23.0 Ω Rg = 4.7 Ω IF = –2.6 A, VGS = 0 Note4 IF = –2.6 A, VGS = 0 diF/ dt =100A/µs Rev.2.00, Oct.06.2004, page 3 of 10 HAT3021R Main Characteristics • N Channel Power vs. Temperature Derating 4.0 Pch (W) 100 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Maximum Safe Operation Area 3.0 ID (A) 10 PW Channel Dissipation Drain Current 1 DC =1 10 10 µs 0µ 1m s s 0m s( 1s 2.0 Op era tio 0.1 Operation in this area is limited by RDS(on) n( ho PW t) ≤1 No t 0 se 4 ) 1.0 0.01 Ta = 25°C 0 50 100 150 Ta (°C) 200 0.001 1 shot Pulse 0.1 1 10 100 Ambient Temperature Drain to Source Voltage VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics 10 4.5 V 10 V 3.4 V 10 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) Drain Current ID (A) 3.2 V Drain Current 5 3.0 V 5 VGS = 2.8 V Pulse Test 0 5 Drain to Source Voltage VDS 10 (V) 0 Tc = 75°C 25°C −25°C 2 3 4 Gate to Source Voltage VGS 5 (V) Drain to Source Voltage VDS(on) (mV) 500 Pulse Test 400 300 200 Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1000 100 VGS = 4.5 V 10 V ID = 2 A 1A 0.5 A 15 5 10 20 Gate to Source Voltage VGS (V) 100 0 10 0.1 Pulse Test 1 Drain Current 10 ID (A) 100 Rev.2.00, Oct.06.2004, page 4 of 10 HAT3021R Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 ID = 0.5 A, 1 A, 2 A Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance |yfs| (S) 100 30 10 3 1 0.3 0.1 Tc = –25°C 150 VGS = 4.5 V 100 0.5 A, 1 A, 2 A 25°C 75°C 50 0 -25 10 V 0.03 0.01 0.01 0.03 0.1 0.3 VDS = 10 V Pulse Test 1 3 10 Drain Current ID (A) 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Recovery Time trr (ns) 100 Body-Drain Diode Reverse Recovery Time 1000 500 Typical Capacitance vs. Drain to Source Voltage Ciss 50 Capacitance C (pF) 200 100 50 20 10 5 2 Coss Crss 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 1 3 Reverse Drain Current 10 IDR (A) 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics 20 (V) 100 50 Switching Time t (ns) tf td(on) tr td(off) Dynamic Input Characteristics VDS (V) 100 ID = 3.4 A VGS VDS VDD = 50 V 25 V 10 V Drain to Source Voltage VGS 80 16 60 12 Gate to Source Voltage 20 10 5 40 8 20 VDD = 50 V 25 V 10 V 2 4 6 8 Gate Charge Qg (nC) 4 0 10 0 2 VGS = 10 V, VDD = 30 V Rg = 4.7 Ω, duty ≤ 1 % 1 0.1 0.2 1 2 0.5 5 Drain Current ID (A) 10 Rev.2.00, Oct.06.2004, page 5 of 10 HAT3021R Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) 10 V 5 5V VGS = 0 V, –5 V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 1 D=1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 1 0.0 se pul hot 1s θch - f(t) = γs (t) x θch - f θch - f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40x40x1.6 mm) PDM D= PW T 0.001 PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) 100 1000 10000 Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 30 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Rev.2.00, Oct.06.2004, page 6 of 10 HAT3021R • P Channel Power vs. Temperature Derating 4.0 Pch (W) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 Maximum Safe Operation Area 10 µs ID (A) 10 PW Channel Dissipation Drain Current 1 DC =1 10 0 1 m µs s 2.0 Op 0m era s( 1s 0.1 Operation in this area is 0.01 limited by RDS(on) Ta = 25°C tio ho n( t) PW 1.0 ≤ 1Note 0s 4 ) 0 50 100 150 Ta (°C) 200 0.001 1 shot Pulse 0.1 1 10 100 Ambient Temperature Drain to Source Voltage VDS (V) Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Output Characteristics –5.0 -10 V -4.5 V ID (A) -3.0 V –4 ID (A) –5 Typical Transfer Characteristics VDS = 10 V Pulse Test –3 Drain Current –2.5 VGS = -2.8 V Drain Current –2 Tc = 75°C 25°C −25°C 0 –2 –4 –6 Gate to Source Voltage –8 VGS –10 (V) –1 Pulse Test 0 –5 Drain to Source Voltage VDS –10 (V) Drain to Source Voltage VDS(on) (mV) –1000 Pulse Test –800 Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test VGS = –4.5 V 100 –10 V –600 –400 –200 ID = –2 A –1 A –0.5 A 0 –4 –8 –12 Gate to Source Voltage –16 –20 VGS (V) 10 –0.1 –1 Drain Current –10 ID (A) Rev.2.00, Oct.06.2004, page 7 of 10 HAT3021R Static Drain to Source on State Resistance vs. Temperature 500 Pulse Test 400 ID = –0.5 A, –1 A 300 VGS = 4.5 V 200 –0.5 A, –1 A, –2 A 10 V –2 A Forward Transfer Admittance vs. Drain Current Tc = –25°C Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance |yfs| (S) 10 5 2 1 0.5 25°C 0.2 0.1 0.05 0.02 0.01 0 –0.03 –0.1 –0.3 Drain Current VDS = 10 V Pulse Test –1 –3 –10 ID (A) 75°C 100 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 100 10000 5000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 50 Capacitance C (pF) 2000 1000 500 200 100 50 20 10 20 di / dt = –100 A / µs VGS = 0, Ta = 25°C –0.3 –1 –3 –10 Reverse Drain Current IDR (A) Dynamic Input Characteristics Coss Crss 0 –10 –20 –30 –40 –50 10 –0.1 Drain to Source Voltage VDS (V) Switching Characteristics 100 (V) 50 Switching Time t (ns) td(off) tr td(on) tf VDS (V) 0 VDD = –50 V –25 V –10 V 0 Drain to Source Voltage VGS –20 –4 –40 VDS –60 VDD = –50 V –25 V –10 V VGS –8 Gate to Source Voltage 20 10 5 2 1 –0.1 –12 –80 ID = –2.6 A –100 0 4 8 12 16 Gate Charge Qg (nC) –1