Low Noise/ High Performance/ Quad Operational Amplifier

www.DataSheet4U.com HA-5104/883 Low Noise, High Performance, Quad Operational Amplifier Description Low noise and high performance are key words describing the unity gain stable HA-5104/883. This general purpose quad amplifier offers an array of dynamic specifications including 1V/µs slew rate (min), and 8MHz bandwidth (typ). Complementing these outstanding parameters are very low noise specifications of 4.3nV/√Hz at 1kHz (typ) or 6nV/√Hz (max). Fabricated using the Intersil standard high frequency D.I. process, these operational amplifiers also offer excellent input specifications such as 2.5mV (max) offset voltage and 75nA (max) offset current. Complementing these specifications are 100dB (min) open loop gain and 55dB channel separation (min). Economically, the HA-5104/883 also consumes a very moderate amount of power (225mW per package) while also saving board space and cost. This impressive combination of features make this amplifier ideally suited for designs ranging from audio amplifiers and active filters to the most demanding signal conditioning and instrumentation circuits. July 1994 Features • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Input Noise Voltage Density at 1kHz. . 6nV/√Hz (Max) 4.3nV/√Hz (Typ) • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . 1V/µs (Min) 3V/µs (Typ) • Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 8MHz (Typ) • High Open Loop Gain (Full Temp) . . . . . 100kV/V (Min) 250kV/V (Typ) • High CMRR, PSRR (Full Temp) . . . . . . . . . . . 86dB (Min) 100dB (Typ) • Low Offset Voltage Drift . . . . . . . . . . . . . . 3µV/oC (Typ) • No Crossover Distortion • Standard Quad Pinout Applications • High Q Active Filters • Audio Amplifiers • Integrators • Signal Generators • Instrumentation Amplifiers Ordering Information PART NUMBER HA1-5104/883 HA4-5104/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC PACKAGE 14 Lead CerDIP 20 Lead Ceramic LCC Pinouts HA-5104/883 (CERDIP) TOP VIEW OUT 1 -IN1 +IN1 V+ +IN2 -IN2 OUT 2 1 2 3 4 5 6 7 +2 -1 + 4+ 14 OUT 4 13 -IN4 12 +IN4 11 V3+ 10 +IN3 9 8 -IN3 OUT 3 +IN1 NC V+ NC +IN2 4 5 6 7 8 9 -IN2 10 11 12 13 NC OUT 2 OUT 3 -IN3 2 +3 -+ +1 -+ 4 HA-5104/883 (CLCC) TOP VIEW OUT 1 -IN1 OUT 4 NC -IN4 18 +IN4 17 NC 16 V15 NC 14 +IN3 3 2 1 20 19 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 Spec Number 3-114 511014-883 File Number 3710 www.DataSheet4U.com Specifications HA5104/883 Thermal Information Thermal Resistance θJA θJC CerDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W 20oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W Package Power Dissipation Limit at +75oC for TJ ≤ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC Absolute Maximum Ratings Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite (One Amplifier Shorted to Ground) Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V VINCM ≤ 1/2 (V+ - V-) RL ≥ 2kΩ TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Input Bias Current +IB VCM = 0V, +RS = 10kΩ, -RS = 100Ω VCM = 0V, +RS = 100Ω, -RS = 10kΩ VCM = 0V, +RS = 10kΩ, -RS = 10kΩ V+ = +3V, V- = -27V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 -CMR V+ = +27V, V- = -3V 1 2, 3 Large Signal Voltage Gain +AVOL VOUT = 0V and +10V, RL = 2kΩ VOUT = 0V and -10V, RL = 2kΩ ∆VCM = +5V, V+ = +10V, V- = -20V, VOUT = -5V ∆VCM = -5V, V+ = +20V, V- = -10V, VOUT = +5V 4 5, 6 4 5, 6 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC MIN -2.5 -3.0 -200 -325 -200 -325 -75 -125 +12 +12 100 100 100 o PARAMETERS Input Offset Voltage SYMBOL VIO CONDITIONS VCM = 0V MAX 2.5 3.0 200 325 200 325 75 125 -12 -12 - UNITS mV mV nA nA nA nA nA nA V V V V kV/V kV/V kV/V kV/V dB dB dB dB +25oC +125oC, -55oC -IB +25oC +125oC, -55oC Input Offset Current IIO +25oC +125oC, -55oC Common Mode Range +CMR +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC -AVOL +25 C +125 C, -55 C +25 C +125 C, -55 C +25oC +125 C, -55 C o o o o o o o 100 86 86 86 86 Common Mode Rejection Ratio +CMRR -CMRR Spec Number 3-115 511014-883 www.DataSheet4U.com Specifications HA5104/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RSOURCE = 100Ω, RLOAD = 500kΩ, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 -VOUT1 RL = 2kΩ 1 2, 3 +VOUT2 RL = 10kΩ 1 2, 3 -VOUT2 RL = 10kΩ 1 2, 3 Output Current +IOUT VOUT = -5V 1 2, 3 -IOUT VOUT = +5V 1 2, 3 Quiescent Power Supply Current +ICC VOUT = 0V, IOUT = 0mA 1 2, 3 -ICC VOUT = 0V, IOUT = 0mA 1 2, 3 Power Supply Rejection Ratio +PSRR ∆VSUP = 10V, V+ = +10V, V- = -15V V+ = +20V, V- = -15V ∆VSUP = 10V, V+ = +15V, V- = -10V V+ = +15V, V- = -20V 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 10 10 12 12 10 10 -6.5 -7.5 86 86 86 86 MAX -10 -10 -12 -12 -10 -10 6.5 7.5 UNITS V V V V V V V V mA mA mA mA mA mA mA mA dB dB dB dB PARAMETERS Output Voltage Swing SYMBOL +VOUT1 CONDITIONS RL = 2kΩ -PSRR TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. GROUP A SUBGROUPS 4 4 4 4 4 4 LIMITS TEMPERATURE +25 C +25 C +25 C +25oC +25oC +25 C o o o o PARAMETERS Slew Rate SYMBOL +SR -SR CONDITIONS VOUT = -3V to +3V VOUT = +3V to -3V VOUT = 0 to +200mV 10% ≤ TR ≤ 90% VOUT = 0 to -200mV 10% ≤ TF ≤ 90% VOUT = 0 to +200mV VOUT = 0 to -200mV MIN 1 1 - MAX 200 200 35 35 UNITS V/µs V/µs ns ns % % Rise and Fall Time TR TF Overshoot +OS -OS Spec Number 3-116 511014-883 www.DataSheet4U.com Specifications HA5104/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = 1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Differential Input Resistance Input Noise Voltage Density Input Noise Current Density Full Power Bandwidth Minimum Closed Loop Stable Gain Output Resistance Quiescent Power Consumption Channel Separation SYMBOL RIN EN IN FPBW CLSG ROUT PC CS CONDITIONS VCM = 0V RS = 20Ω, fO = 1000Hz RS = 2MΩ, fO = 1000Hz VPEAK = 10V RL = 2kΩ, CL = 50pF Open Loop VOUT = 0V, IOUT = 0mA RS = 1kΩ, AVCL = 100V/V, VIN = 100mVPEAK at 10kHz Referred to Input NOTES 1 1 1 1, 2 1 1 1, 3 1 TEMPERATURE +25oC +25oC +25oC +25oC -55oC to +125oC +25oC -55oC to +125oC MIN 250 32 +1 55 MAX 6 3 270 225 UNITS kΩ nV/√Hz pA/√Hz kHz V/V Ω mW dB +25oC NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.). TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLES 1 AND 2) 1 1 (Note 1), 2, 3, 4, 5, 6 1, 2, 3, 4, 5, 6 1 Spec Number 3-117 511014-883 www.DataSheet4U.com HA5104/883 Die Characteristics DIE DIMENSIONS: 95 x 99 x 19 mils ± 1 mils 2420 x 2530 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ WORST CASE CURRENT DENSITY: 1.43 x 105 A/cm2 SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: 175 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA5104/883 +IN2 V+ +IN1 -IN2 -IN1 OUT2 OUT3 OUT1 OUT4 -IN3 -IN4 +IN3 V- +IN4 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems