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Infineon
Infineon

H15R1202 Datasheet

Reverse Conducting IGBT


H15R1202 Datasheet Preview


IHW15N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
www.DataSheet4U.coCmomplete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
IHW15N120R2 1200V 20A
1.5V
175°C H15R1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Mounting Torque
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Ms
C
G
E
PG-TO-247-3-21
Package
PG-TO-247-3-21
Value
1200
30
15
45
45
30
15
45
50
130
120
±20
±25
357
-40...+175
-55...+175
260
0.6
Unit
V
A
V
W
°C
Nm
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1 Feb. 06
Page 1

IHW15N120R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
www.DataSheetT4Uh.ecrommal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.52
0.47
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=15A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=15A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.4mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=15A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
typ.
-
1.5
1.7
1.8
1.45
1.55
1.6
5.8
-
-
-
11.7
none
Unit
max.
-V
1.75
-
-
1.65
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 1 Feb. 06
Page 2

IHW15N120R2
Soft Switching Series
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
www.DataSheet4U.com
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
-
-
-
-
-
1530
49
39
133
13
- pF
-
-
- nC
- nH
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-off energy
Total switching energy
td(off)
tf
Eoff
Ets
Tj=25°C,
VCC=600V,IC=15A
VGE=0 /15V,
RG=14.8,
LCσσ22))==23390pnFH ,
min.
-
-
-
-
Value
typ.
Unit
max.
282 -
62 -
0.9 -
0.9 -
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-off energy
Total switching energy
td(off)
tf
Eoff
Ets
Tj=175°C
VCC=600V,IC=15A,
VGE= 0 /15V,
RG= 14.8,
LCσσ==23390pnFH2 )2 ) ,
min.
-
-
-
-
Value
typ.
342
90
1.3
1.3
Unit
max.
-
-
-
-
2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 1 Feb. 06
Page 3

IHW15N120R2
Soft Switching Series
40A
30A
www.DataSheet4U.c2o0mA
10A
TC=80°C
TC=110°C
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for hard
switching (turn-off)
(Tj 175°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 14.8)
tp=1µs
10µs
10A
50µs
200µs
1A
1ms
10ms
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. IGBT Safe operating area
(D = 0, TC = 25°C,
Tj 175°C;VGE=15V)
250W
200W
30A
150W
20A
100W
50W
10A
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
0A
25°C 50°C 75°C 100°C 125°C 150°C
Figure 4.
TC, CASE TEMPERATURE
DC Collector current as a function
of case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 1 Feb. 06
Page 4
Part Number H15R1202
Manufactur Infineon
Description Reverse Conducting IGBT
Total Page 12 Pages
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