4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package. .380 (9.64) MAX .012 (.30) .007 (.20) .055 (1.40) .047 (1.20) 4 3 .270 (6.86) .248 (6.30) .327 (8.30) MAX .300 (7.62) MIN The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. 1 2 .187 (4.75) .175 (4.45) FEATURES 0 to 15° s s .200 (5.10) MAX .158 (4.01) .144 (3.68) .020 (.51) MIN .154 (3.90) .120 (3.05) Compact 4-pin package Current transfer ratio in selected groups: H11AA814: 20-300% H11AA814A: 50-150% H11A817: H11A817A: H11A817B: H11A817C: H11A817D: 50-600% 80-160% 130-260% 200-400% 300-600% .022 (.56) .015 (.40) .100 (2.54) TYP APPLICATIONS 1 4 COLLECTOR ANODE 1 4 COLLECTOR 2 3 EMITTER CATHODE 2 3 EMITTER Equivalent Circuit (H11AA814) Equivalent Circuit (H11A817) H11AA814 Series s AC line monitor s Unknown polarity DC sensor s Telephone line interface H11A817 Series s Power supply regulators s Digital logic inputs s Microprocessor inputs s Industrial controls NOTE: ALL DIMENSIONS ARE IN INCHES (mm) PACKAGE CODE T ABSOLUTE MAXIMUM RATING TOTAL PACKAGE Storage temperature . . . . . . . . . . . . . . . . .-55° to 150° C Operating temperature . . . . . . . . . . . . . . . -55° to 100° C Lead solder temperature . . . . . . . . . . . 260° C for 10 sec Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW INPUT DIODE Power dissipation (25° C ambient) . . . . . . . . . . . .70 mW Derate linearly (above 25° C) . . . . . . . . . . . .1.33 mW/° C Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA Peak forward current (1 µs pulse, 300 pps) . . . . . . . . .1 A Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V OUTPUT TRANSISTOR Power dissipation (25° C ambient) . . . . .150 mW Derate linearly (above 25° C) . . . . . .2.0 mW/° C VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Continuous collector current . . . . . . . . . . 50 mA 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS ELECTRO-OPTICAL CHARACTERISTICS (TA = 25° C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS (Applies to all unless indicated otherwise) PARAMETER INPUT DIODE Forward voltage H11A817 H11AA814 Reverse current H11A817 OUTPUT TRANSISTOR Breakdown voltage Collector to emitter Emitter to collector Collector dark current Capacitance BVCEO BVECO ICEO CCE 35 6 100 10 .025 8 100 V V nA pF IC = 1 mA, IF = 0 IE = 100 µA, IF = 0 VCE = 10 V, IF = 0 VCE = 0 V, f = 1 MHz IR .001 10 µA VR = 5 V VF VF 1.2 1.2 1.5 1.5 V V IF = 20 mA IF = ±20 mA SYMBOL MIN TYP MAX UNITS TEST CONDITIONS TRANSFER CHARACTERISTICS CHARACTERISTIC DC current transfer ratio H11AA814 H11AA814A H11A817 H11A817A H11A817B H11A817C H11A817D Saturation Voltage Rise time (non saturated) Fall time (non saturated) CTR CTR CTR CTR CTR CTR CTR VCE (SAT) tr tf 20 50 50 80 130 200 300 0.1 2.4 2.4 300 150 600 160 260 400 600 0.2 18 18 % % % % % % % V µs µs IF = (±)20 mA, IC = 1 mA IC = 2 mA, VCE = 2 V, RL = 100 Ω IC = 2 mA, VCE = 2 V, RL = 100 Ω IF = ±1 mA,VCE = 5V IF = ±1 mA,VCE = 5V IF = 5 mA,VCE = 5V SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ISOLATION CHARACTERISTICS CHARACTERISTIC SYMBOL MIN 5300 10 11 TYP MAX UNITS VRMS Ω TEST CONDITIONS 1 Minute VI-O = 500 VDC VI-O = Ø, f = 1 MHz Steady-state isolation voltage VISO Isolation resistance Isolation capacitance RISO CISO 0.5 pF 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS TYPICAL CHARACTERISTICS 1.4 1.2 IF = 10 mA 1.2 NORMALIZED CTR CTR Normalized @ IF = 5 mA, VCE = 5 V, Ta = 25° C CTR Normalized @ IF = 5 mA, VCE = 5 V, Ta = 25° C 1 1 NORMALIZED CTR 0.8 IF = 5 mA 0.8 0.6 0.4 0.6 0.2 0 0 5 10 15 20 25 30 0.4 -50 -25 0 +25 +50 +75 +100 FORWARD CURRENT – IF (mA) AMBIENT TEMPERATURE (° C) FIG. 1 - Normalized CTR vs. Forward Current FIG. 2 - Normalized CTR vs. Ambient Temperature .14 IF = 20 mA IC = 1 mA .12 1.5 .1 FORWARD VOLTAGE – VF (V) 1.3 1.7 .08 VCE ( SAT) (V) T = -55° C 1.1 T = -25° C 0.9 T = 100° C .06 .04 .02 0.7 0 -50 0.5 -25 0 25 50 75 100 125 0.1 0.2 0.5 1.0 2.0 5 10 20 50 100 AMBIENT TEMPERATURE (° C) FORWARD CURRENT – IF (mA) FIG. 3 - VCE (SAT) vs. Ambient Temperature FIG. 4 - Forward Voltage vs. Forward Current 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS TYPICAL CHARACTERISTICS 25 10 IF = 20 mA 20 COLLECTOR CURRENT IC (mA) 1 VCE = 10 V 10-1 15 ICEO ( A) IF = 5 mA 10-5 10-2 IF = 10 mA 10 10-3 10-4 5 IF = 1 mA 0 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR–EMITTER VOLTAGE VCE (V) 10-6 0 25 50 75 100 125 AMBIENT TEMPERATURE (° C) FIG. 5 - Collector Current vs. Collector-Emitter Voltage FIG. 6 - Collector Leakage Current vs. Ambient Temperature 1000 IF = 5 mA VCC = 5 V Ta = 25° C Toff Tf 100 SWITCHING SPEED ( S) 10 1 Tr Ton 0.1 0.1 1 10 100 R-LOAD RESISTOR (k Ω) FIG. 7 - Switching Speed vs. Load Resistor (TYP) Call QT Optoelectronics for more information or the phone number of your nearest distributor. United States 800-533-6786 France 33 01/43.99.25.12 Germany 49 089/96.30.51 United Kingdom 44 [0] 1296/39.44.99 Asia/Pacific 603/735-2417 s s s s © 1996 QT Optoelectronics QT-012-A DS 104