Compact Refl ective Photointerrupter

www.DataSheet4U.com GP2S27J0000F Series GP2S27J0000F Series SMT, Detecting Distance : 0.7mm Phototransistor Output, Compact Reflective Photointerrupter ■ Description GP2S27J0000F Series is a compact-package, phototransistor output, reflective photointerrupter, with emitter and detector facing the same direction in a molding that provides non-contact sensing. The compact package series is a result of unique technology, combing transfer and injection molding, that also blocks visible light to minimize false detection. This photointerrupter can be ordered in different CTR ranks, and comes in a surface-mount, gullwing lead package, suitable for reflow soldering. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. Detection of object presence or motion. 2. Example : printer, optical storage ■ Features 1. Reflective with Phototransistor Output 2. Highlights : • Compact Size • Surface Mount Type (SMT), reflow soldering, with gullwing leads • Optional Tape and Reel (T&R) 1 000 pcs per reel 3. Key Parameters : • Optimal Sensing Distance : 0.7mm • Package : 4×3×1.7mm • Visible light cut resin to prevent 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A01901EN Date Oct. 3. 2005 © SHARP Corporation GP2S27J0000F Series ■ Internal Connection Diagram 1 2 1 2 3 4 3 4 Anode Emitter Collector Cathode ■ Outline Dimensions (0.4) Detector center (Unit : mm) C0.7 2 1 3 4 1.75 4−0.1 0.75 0.15−0.1 +0.2 +0.2 (0.2) Emitter center 3−0.1 +0.2 1.7 0.4 5 MAX. (0.4) • Tolerance : ±0.15mm. • ( ) : Reference dimensions. • The parallerism in 4 leads are 0.15mm. • The dimensions shown do not include burr. Burr's dimension : 0.15mm MAX. • The shaded portion has no SnCu plating. Date code mark Product mass : approx. 0.03g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D3-A01901EN 2 GP2S27J0000F Series Date code (Symbol) January July February August March September April October May November June December Rank mark There is no rank indicator. Country of origin Japan Sheet No.: D3-A01901EN 3 GP2S27J0000F Series ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ Symbol Rating IF 50 VR 6 P 75 VCEO 35 VECO 6 20 IC 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C) Unit mA V mW V V mA mW mW ˚C ˚C ˚C Soldering area: The hatched area more than 0.5mm away from the lower edge of package as shown in the figure below. 0.5mm 0.5mm 1 For 5s or less ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current ∗2 Collector Current Transfer Rise time Response time characFall time teristics ∗3 Leak current ∗ Symbol VF IR ICEO IC tr tf ILEAK Condition IF=20mA VR=6V VCE=20V IF=4mA, VCE=2V VCE=2V, IC=100μA, RL=1kΩ, d=1mm IF=4mA, VCE=2V MIN. − − − 20 − − − TYP. 1.2 − 1 45 20 20 − (Ta=25˚C) MAX. Unit 1.4 V 10 μA 100 nA 120 μA 100 μs 100 100 nA 2 The condition and arrangement of the reflective object are shown below. The rank splitting of collector current (IC) shall be executed according to the table below. Rank A B C Collector current, IC [μA] (IF=4mA, VCE=2V) 20 to 42 34 to 71 58 to 120 Package oleeve color Yellow Transparent Green ∗ 3 Without reflective object. ● Test Condition and Arrangement for Collector Current Al evaporation d=1mm glass plate Sheet No.: D3-A01901EN 4 GP2S27J0000F Series ■ Model Line-up Package Sleeve 50 pcs/sleeve GP2S27J0000F GP2S27BJ000F GP2S27CJ000F GP2S27ABJ00F GP2S27BCJ00F Taping 1 000 pcs/reel GP2S27TJ000F GP2S27T2J00F GP2S27T3J00F GP2S27T5J00F GP2S27T6J00F Rank A, B or C B C A or B B or C Collector current IC[μA] (IF=4mA, VCE=2V, Ta=25˚C) 20 to 120 34 to 71 58 to 120 20 to 71 34 to 120 Model No ∗ The ratio of each rank can not be guaranteed. Please contact a local SHARP sales representative to see the actial status of the produiction. Sheet No.: D3-A01901EN 5 GP2S27J0000F Series Fig.1 Forward Current vs. Ambient Temperature 60 50 Fig.2 Power Dissipation vs. Ambient Temperature 120 100 Power dissipation P (mW) 80 75 60 40 20 15 Ptot Forward current IF (mA) 40 30 20 10 0 −25 P, PC 0 25 50 75 85 100 0 −25 Ambient temperature Ta (˚C) 0 25 50 75 85 Ambient temperature Ta (˚C) 100 Fig.3 Forward Current vs. Forward Voltage Ta =75˚C 50˚C 25˚C Fig.4 Collector Current vs. Forward Current 700 600 Collector current IC (μA) 500 400 300 200 100 VCE=2V Ta=25˚C Forward current IF (mA) 100 0˚C −25˚C 10 1 0 0.5 1 1.5 2 Forward voltage VF (V) 2.5 3 0 0 5 10 15 20 Forward current IF (mA) 25 30 Fig.5 Collector Current vs. Collector-Emitter Voltage 350 300 Collector current IC (μA) 250 10mA 200 150 100 4mA 50 2mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 12 Ta= 25˚C IF=15mA Fig.6 Relative Collector Current vs. Ambient Temperature 120 100 80 60 40 20 0 −25 IF=4mA VCE=2V 7mA Relative collector current IC (%) 0 25 50 75 Ambient temperature Ta (˚C) 100 Sheet No.: D3-A01901EN 6 GP2S27J0000F Series Fig.7 Collector Dark Current vs. Ambient Temperature 10 −6 VCE =20V Fig.8 Response Time vs. Load Resistance 1 000 VCE =2V IC =100μA Ta =25˚C 100 Response time (μs) Collector dark current ICEO (A) 10 −7 tr tf 10 −8 10 td ts 10 −9 1 10 −10 0 25 50 75 Ambient temperature Ta (˚C) 100 0.1 0.1 1 10 100 1 000 Load resistance RL (kΩ) Fig.9 Test Circuit for Response Time Fig.10 Relative Collector Current vs. Distance (Reference value) 100 IF=4mA VCE=2V Ta=25˚C Input RD RL Output Output td tr 10% 90% ts tf Relative collector current (%) Reflector Plate VCC Input 80 60 40 20 0 0 1 2 3 4 5 Distance between sensor and Al evaporation glass d (mm) Fig.11 Detecting Position Characteristics (1) 100 IF=4mA VCE=2V d=1mm Ta=25˚C Fig.12 Detecting Position Characteristics (2) 100 IF=4mA VCE=2V d=1mm Ta=25˚C Relative collector current (%) 60 Relative collector current (%) 80 80 60 40 40 20 20 0 −2 −1 0 2 4 1 3 5 Card moving distance L (mm) 6 7 0 −3 −2 −1 1 3 0 2 4 Card moving distance L (mm) 5 6 Sheet No.: D3-A01901EN 7 GP2S27J0000F Series Fig.13 Test Condition for Distance & Detecting Position Characteristics Al evaporated glass Correspond to Fig.10 d Fig.14 Freauency Response 5 VCE =2V IC =100μA Ta =25˚C 0 Voltage gain AV (dB) Correspond to Fig.11 Test condition IF = 4mA VCE = 2V d = 1mm OMS card White d Black 1mm d Correspond to Fig.12 Test condition IF = 4mA VCE = 2V d = 1mm OMS card White Black 1mm −5 RL =10kΩ 1kΩ −10 −15 −20 102 103 104 Frequency f (Hz) 105 106 − L=0 + − L=0 + Fig.15 Spectral Sensitivity (Detecting Side) 100 Ta =25˚C 80 Relative sensitivity (%) 60 40 20 0 600 700 800 900 1 000 Wavelength λ (nm) 1 100 1 200 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A01901EN 8 GP2S27J0000F Series ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Distance characteristic Please refer to Fig.10 (Relative collector current vs. Distance) to set the distance of the photointerrupter and the object. This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Phototransister Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 20 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polyphenylene sulfide resin Lead frame 42Alloy Lead frame plating SnCu plating Sheet No.: D3-A01901EN 9 GP2S27J0000F Series ■ Manufacturing Guidelines ● Storage and management after open Storage condition Storage temp.: 5 to 30˚C, Storage humidity : 70%RH or less at regular packaging. Treatment after opening the moisture-proof package After opening, you should mount the products while keeping them on the condition of 5 to 25˚C and 70%RH or less in humidity within 4 days. After opening the bag once even if the prolonged storage is necessary, you should mount the products within two weeks. And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products and silicagel are sealed up again, you should keep them under the condition of 5 to 30˚C and 70%RH or less in humidity. Baking before mounting When the above-mentioned storage method could not be executed, please process the baking treatment before mounting the products. However the baking treatment is permitted within one time. Recommended condition : 125˚C, 16 to 24 hours ∗Do not process the baking treatment with the product wrapped. When the baking treatment processing, you should move the products to a metallic tray or fix temp