Snap-in fi xing Transmissive Photointerrupter

www.DataSheet4U.com GP1S74PJ000F GP1S74PJ000F Gap : 5mm Slit : 0.5mm Phototransistor Output, Snap-in fixing Transmissive Photointerrupter with Connector ■ Description GP1S74PJ000F is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are inserted in a case, and a 3-pin connector is included to allow remote-mount or off-board designs. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example : PPC, FAX, Printer ■ Features 1. Transmissive with phototransistor output 2. Highlights : • Special position hooks compatible with 3 different plate thicknesses (1.0, 1.2, 1.6mm) • Snap insertion 3. Key Parameters : • Gap Width : 5mm • Slit Width (detector side): 0.5mm • Package : 17×12.8×8mm (without connector and hooks) • Connector : Tyco Electronics AMP K.K. (PN : 292133-3) 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A04401EN Date Oct. 3. 2005 © SHARP Corporation GP1S74PJ000F ■ Internal Connection Diagram 3 2 1 1 2 3 Collector GND Anode ■ Outline Dimensions Model No.(1) 74 (Unit : mm) (6.8) (7.8) Connector : 292133-3 (Tyco Electronics AMP K.K) (2.3) (Dector center) 8 (Case plane) 13.6 4.3 5 4.3 1.6 6.8±1 (5.8) 3.2 4.7 2−0.5±0.1 (Slit) 1 2 Model No.(2) 7.2 Date code P 3 Z 5.6 Collector GND 3 Anode 1.1 0.6 0.2 1.1 5.4 2.4 2.3 6.9 9.9 11.4 13.8 16.8 17 2.3 2−0.5 4 2−0.9 0.7 • Unspecified tolerance shall be as follows ; Dimensions(d) d≤5 5≤d<15 15≤d • ( ) : Reference dimensions Tolerance ±0.15 ±0.2 ±0.3 Product mass : approx. 0.8g Connector terminal plating material : Sn Sheet No.: D3-A04401EN 2 GP1S74PJ000F Date code (2 digit) 1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z repeats in a 10 year cycle Country of origin Japan or Philippines (Indicated on the packing case) Sheet No.: D3-A04401EN 3 GP1S74PJ000F ■ Absolute Maximum Ratings Parameter Symbol ∗1 Forward current IF ∗1, 2 Peak forward current IFM Input Reverse voltage VR Power dissipation P Collector-emitter voltage VCEO Emitter-collector voltage VECO Output Collector current IC ∗1 Collector power dissipation PC ∗3 Operating temperature Topr ∗3 Storage temperature Tstg ∗ ∗ ∗ Rating 50 1 6 75 35 6 20 75 −25 to +85 −40 to +85 (Ta=25˚C) Unit mA A V mW V V mA mW ˚C ˚C 1 Refer to Fig. 1, 2, 3 2 Pulse width ≤ 100μs, Duty ratio=0.01 3 The connector should be plugged in/out at normal temperature. ■ Electro-optical Characteristics Parameter Forward voltage Input Peak forward voltage Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF VFM IR ICEO IC VCE(sat) tr tf Condition IF=20mA IFM=0.5A VR=3V VCE=20V VCE=5V, IF=20mA IF=40mA, IC=0.5mA VCE=2V, IC=2mA, RL=100Ω MIN. − − − 0.5 − − − TYP. 1.2 3 − 1 − − 3 4 (Ta=25˚C) MAX. Unit 1.4 V 4 V 10 μA 100 nA 15 mA 0.4 V 15 μs 20 Sheet No.: D3-A04401EN 4 GP1S74PJ000F Fig.1 Forward Current vs. Ambient Temperature 60 Fig.2 Collector Power Dissipation vs. Ambient Temperature 120 Collector power dissipation PC (mW) 100 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 50 Forward current IF (mA) 40 30 20 10 0 −25 0 25 50 75 85 Ambient temperature Ta (˚C) 100 Ambient temperature Ta (˚C) Fig.3 Peak Forward Current vs. Duty Ratio Pulse width≤100μs Ta=25˚C Peak forward current IFM (mA) 1 000 Fig.4 Forward Current vs. Forward Voltage 1 000 Forward current IF (mA) 100 Ta=75˚C 50˚C 10 25˚C 0˚C −25˚C 100 10 10−2 10−1 Duty ratio 1 1 0 0.5 1 1.5 2 2.5 3 3.5 Foward voltage VF (V) Fig.5 Collector Current vs. Forward Current 10 VCE=5V Ta=25˚C Fig.6 Collector Current vs. Collector-emitter Voltage 10 Ta=25˚C Collector current IC (mA) Collector current IC (mA) 8 8 IF =50mA 40mA 6 6 30mA 4 20mA 2 10mA 4 2 0 0 10 20 30 40 50 Forward current IF (mA) 0 0 1 2 3 4 5 6 7 8 9 10 Collector-emitter VCE (V) Sheet No.: D3-A04401EN 5 GP1S74PJ000F Fig.7 Collector Current vs. Ambient Temperature 4 I F=20mA V CE=5V Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.25 Collector-emitter saturation voltage VCE (sat) (V) IF=40mA IC=0.5mA 0.2 Collector current IC (mA) 3 0.15 2 0.1 1 0.05 0 −25 0 25 50 75 Ambient temperature Ta (˚C) 100 0 −25 0 25 50 75 100 Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance 100 Fig.10 Test Circuit for Response Time VCE= 2V IC = 2mA Ta =25˚C Response time (μs) 10 VCC RD Input tf tr td RL Output Input 10% 90% td tr ts tf Output 1 ts 0.1 0.01 0.1 1 Load resistance RL (kΩ) 10 Fig.11 Frequency Response 5 VCE=2V IC=2mA Ta=25˚C RL= 10kΩ 1kΩ 100Ω −5 Fig.12 Collector Dark Current vs. Ambient Temperature 10−6 VCE=20V Collector dark current ICEO (A) 0 Voltage gain AV (dB) 10−7 10−8 −10 10−9 −15 −20 102 103 104 Frequency f (Hz) 105 106 10−10 −25 0 25 50 75 Ambient temperature Ta (˚C) 100 Sheet No.: D3-A04401EN 6 GP1S74PJ000F Fig.13 Detecting Position Characteristics (1) 100 Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 1 2 3 4 Shield moving distance L (mm) 5 Ta=25˚C VCE=5V 0L Fig.14 Detecting Position Characteristics (2) 100 Ta=25˚C VCE=5V Shield plate L Sensor 1 2 3 4 Shield moving distance L (mm) 0 80 70 60 50 40 30 20 10 0 5 Sheet No.: D3-A04401EN Shield plate Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 7 Relative collector current (%) 90 Sensor GP1S74PJ000F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 4mm or more from the top of elements. (Example) 4mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 400 to 1 200 Response time (μs) 3 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polycarbonate resin (UL94 V-2) Lead frame 42Alloys (No plating) Connector terminal finish Sn plating Sheet No.: D3-A04401EN 8 GP1S74PJ000F ● Recommended Installation Hole drawing 1) We recommend to fix the product at punching side on the fixing plate (metal plate). 2) Please decide the final dimensions at your side after confirmation by the actual applications. Because mounting efficiency and mounted stabilization are dependent on mounting hole corner curve and punched state. 3) Tolerance shall be ±0.1mm Normal type 8−R0.1 8−R0.1 8−R0.1 3.5 17 7.5 Plate thickness : 1mm 3.5 12−R0.1 3.5 17 2.4 7.5 Plate thickness : 1mm 2.4 3.5 17 17 7.5 7.5 17 7.7 Plate thickness : 1.6mm 7.5 Plate thickness : 1.2mm Reverse-insertion prevention type 12−R0.1 12−R0.1 7.5 7.5 17 2.4 7.7 2.4 2.4 7.5 2.4 Plate thickness : 1.6mm Plate thickness : 1.2mm 6 6 6 6 Sheet No.: D3-A04401EN 9 GP1S74PJ000F ■ Manufacturing Guidelines ● Notes of cleaning Please carry out neither the immersion cleaning nor the ultrasonic cleaning to avoid the solvent residue inside the case. When necessary, dust and stain shall clean by air-blow or wipe off by soft cloth soaked in cleaning agent. The cleaning agent used to wipe off must use only the following kind. Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A04401EN 10 GP1S74PJ000F ■ Package specification ● Case package Package materials Anti-static plastic bag : Polyethtylene Moltopren : Urethane Partition : Corrugated fiberboard Packing case : Corrugated fiberboard Package method 100 pcs of products shall be packaged in a plastic bag, Ends shall be sealed by stapler. The bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. Each partition should have 1 plastic bag. The 10 plastic bags containing a product are put in the packing case. Moltopren should be located after all product are settled (1 packing conteains 1 000 pcs). Packing composition Mo