Compact Transmissive Photointerrupter

www.DataSheet4U.com GP1S39J0000F GP1S39J0000F Gap : 1.5mm, Detector pitch : 1mm 2-phase Phototransistor Output, Compact Transmissive Photointerrupter ■ Description GP1S39J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This is a 2-phase output device, suitable for detection of rotational/linear speed and direction. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. Detection of object presence or motion. 2. Example : printer, lens control for camera ■ Features 1. Transmissive with phototransistor output 2. Highlights : • Compact Size • 2-phase output device 3. Key Parameters : • Gap Width : 1.5mm • Detector pitch : 1mm (Detecting pitch : TYP. 0.6mm) • Package : 4.5×4×3.5mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A01301EN Date Oct. 3. 2005 © SHARP Corporation GP1S39J0000F ■ Internal Connection Diagram Top view 3 PT2 2 1 2 3 4 4 4 PT1 5 1 5 Anode Cathode Emitter 2 Emitter 1 Collector ■ Outline Dimensions Top view aʻ b bʻ 4.5 1.5 Center of light path (0.7) 1.5 1.5 (C0.4) 4 (Unit : mm) a SHARP mark "S" 3.5 Date code 4.7 ∗1.27 b-b' selection (0.8) 4MIN. (0.7) (C0.3) 0.15 +0.2 −0.1 ∗3.14 5 1 Residual gate (2) 0.4 ∗1.27 a-a' selection (1) 4 3 2 (0.37) (0.37) • Unspecified tolerance : ±0.2mm • Dimensions in parenthesis are shown for reference. • The dimensions indicated by *refer to those measured from the lead base. • The dimensions shown do not include those of burrs. Burr's dimensions : 0.15mm MAX. Residual gate : 0.3mm MAX. portion has little thickness of outer molding, • Since the inner devices shall be appeared. Product mass : approx. 0.1g Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D3-A01301EN 2 GP1S39J0000F Date code (2 digit) 1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z repeats in a 10 year cycle Rank mark There is no rank indicator. Country of origin Japan Sheet No.: D3-A01301EN 3 GP1S39J0000F ■ Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Symbol Rating IF 50 VR 6 P 75 VCE1O 35 VCE2O VE1CO 6 VE2CO IC 20 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 Input (Ta=25˚C) Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1mm or more Soldering area Output Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ 1 For 5s or less ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current ∗2 Output Collector dark current Collector current ∗2 Transfer Collector current ratio charac- Collector-emitter saturation voltage Rise time teristics Response time Fall time ∗ Symbol VF IR ICEO IC IC1/IC2 VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=4mA VCE=5V, IF=4mA IF=8mA, IC=50μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 130 0.67 − − − TYP. 1.2 − − − − − 50 50 (Ta=25˚C) MAX. Unit 1.4 V 10 μA 100 nA 520 μA 1.5 − 0.4 V 150 μs 150 μs 2 Output and Transfer characteristics are common to both phototransistors Sheet No.: D3-A01301EN 4 GP1S39J0000F Fig.1 Forward Current vs. Ambient Temperature 60 50 Fig.2 Power Dissipation vs. Ambient Temperature 120 100 Power dissipation P (mW) 80 75 60 40 20 15 Ptot Forward current IF (mA) 40 30 20 10 0 −25 P, Pc 0 25 50 75 85 100 0 −25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Current vs. Forward Current 1 Collector current IC (mA) VCE=5V Ta=25˚C Ta=75˚C 50˚C Forward current IF (mA) 100 25˚C 0˚C −25˚C 0.8 0.6 0.4 10 0.2 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V) 0 0 5 Forward current IF (mA) 10 Fig.5 Collector Current vs. Collector-emitter Voltage 5 Collector current IC (mA) Ta=25˚C Fig.6 Relative Collector Current vs. Ambient Temperature 400 VCE=5V IF=4mA 4 IF=50mA 40mA 30mA 3 Collector current IC (μA) 10 300 200 2 20mA 10mA 4mA 100 1 0 0 2 4 6 8 0 −25 0 25 50 75 85 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Sheet No.: D3-A01301EN 5 GP1S39J0000F Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 Collector-emitter saturation voltage VCE (V) IF=8mA IC=50μA 0.14 Fig.8 Collector Dark Current vs. Ambient Temperature 10−6 VCE=20V Collector dark current ICEO (A) 10−7 0.12 0.1 0.08 0.06 10−8 10−9 −25 0 25 50 75 85 10−10 0 25 50 75 Ambient temperature Ta (˚C) 100 Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance VCE=5V IC=100mA Ta=25˚C Response time (ms) 100 td tr Fig.10 Test Circuit for Response Time VCC Input Output 10% 90% td ts tr tf tf Input RD RL Output 10 ts 1 0.5 1 10 20 Load resistance RL (kΩ) Fig.11 Detecting Position Characteristics (1) (Output of PT1 and PT2 are 100% at L=0) 100 Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 1 2 3 4 Shield moving distance L (mm) Sheet No.: D3-A01301EN − L=0 + L Shield Parameter PT2 detection width : L1 PT1 detection width : L2 Distance between detection positions : L3 TYP. 0.3 0.3 0.6 Unit mm PT2 PT1 IF=4mA VCE=5V Ta=25˚C 6 GP1S39J0000F Fig.12 Detecting Position Characteristics (2) (Output of PT1 and PT2 are 100% at L=0) Shield Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 0.5 1 1.5 IF=4mA VCE=5V Ta=25˚C L + 2 Shield moving distance L (mm) 100 Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. − L=0 Sheet No.: D3-A01301EN 7 GP1S39J0000F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 2mm or more from the top of elements. (Example) 2mm or more 2mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 2) Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 20 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy Lead frame plating SnCu plating Sheet No.: D3-A01301EN 8 GP1S39J0000F ■ Manufacturing Guidelines ● Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please solder within one time. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A01301EN 9 GP1S39J0000F ■ Package specification ● Sleeve package Package materials Sleeve : Polystyrene Stopper : Styrene-butadiene Package method MAX. 40 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. Sheet No.: D3-A01301EN 10 GP1S39J0000F ■ Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for