Compact Transmissive Photointerrupter

www.DataSheet4U.com GP1S25J0000F GP1S25J0000F SMT, Gap : 1.6mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter ■ Description GP1S25J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device has two positioning pins, right angle package, and is reflow solderable. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example: printer, lens control for camera ■ Features 1. Transmissive with phototransistor output 2. Highlights: • Compact Size • Positioning Pin • Surface Mount Type (SMT) • Sideling terminal 3. Key Parameters: • Gap Width: 1.6mm • Slit Width (detector side): 0.3mm • Package: 3.85×3.4×5.2mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A00102EN Date Sep. 1. 2006 © SHARP Corporation GP1S25J0000F ■ Internal Connection Diagram Top view 4 3 2 1 1 Anode 2 Collector 3 Emitter 4 Cathode ■ Outline Dimensions Top view a (Unit : mm) 2.5 a 0.6 (0.85) 1 1.6 1.25 SHARP mark "S" 5.2 3.4 Optical center (C0.3) 0.15−0.10 +0.20 a-a section (0.3) Slit width Date code φ0.8 Gate position 4 3 (1) 0.4 ∗0.87 ∗0.8 1 2 3 4 ∗0.87 (C0.3) 1 2 3 4 Product mass : approx. 0.09g • Tolerance : ± 0.2 mm • ( ) : In dimensions for reference • The dimensions indicated by ∗ refer to those measured from the lead base. • Dimensions shown do not include burr. Burr's dimension : 0.15mm MAX. Rest of gate : 0.3mm MAX. Plating material : SnCu (Cu : TYP. 2%) Sheet No.: D3-A00102EN 2 GP1S25J0000F Date code (2 digit) 1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z repeats in a 10 year cycle Rank mark There is no rank indicator. Country of origin Japan Sheet No.: D3-A00102EN 3 GP1S25J0000F ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ Symbol Rating IF 50 VR 6 P 75 VCEO 35 VECO 6 IC 20 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C) Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1 For 3s ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=50μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 50 − − − TYP. 1.2 − − − − 35 35 (Ta=25˚C) MAX. Unit 1.4 V 10 μA 100 nA 300 μA 0.4 V 100 μs 100 μs Sheet No.: D3-A00102EN 4 GP1S25J0000F Fig.1 Forward Current vs. Ambient Temperature 60 50 Fig.2 Power Dissipation vs. Ambient Temperature 120 100 Power dissipation P, Pc, Ptot (mW) 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 P, Pc Ptot Forward current IF (mA) 40 30 20 10 0 −25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Current vs. Forward Current 2 Ta=75˚C 100 50˚C 25˚C 0˚C −25˚C Collector current IC (mA) VCE=5V Ta=25˚C Forward current IF (mA) 1.6 1.2 10 0.8 0.4 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V) 0 0 4 8 12 16 20 Forward current IF (mA) Fig.5 Collector Current vs. Collector-emitter Voltage 3 Fig.6 Relative Collector Current vs. Ambient Temperature 120 110 100 Collector current IC (mA) 90 80 70 60 50 40 30 20 10 0 −25 IF=5mA VCE=5V Collector current IC (mA) 2.4 1.8 IF=50mA 40mA 1.2 30mA 20mA 0.6 10mA 5mA 0 2 4 6 8 10 0 0 25 50 75 Collector-emitter voltage VCE (V) Ambient temperature Ta (˚C) Sheet No.: D3-A00102EN 5 GP1S25J0000F Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.2 Collector-emitter saturation voltage VCE(sat) (V) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 −25 0 25 50 75 85 IF=10mA IC=50μA Fig.8 Dark Current vs. Ambient Temperature 10−6 VCE=20V 10−7 Dark current ICEO (A) 10−8 10−9 10−10 0 25 50 75 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance 1 000 VCE =5V IC =100μA tr tf Fig.10 Test Circuit for Response Time V CC RD Input RL Output Input Response time (μs) 100 Output td ts tr tf 10% 90% 10 td ts 1 0.1 1 10 100 1 000 Load resistance RL (kΩ) Fig.11 Detecting Position Characteristics (1) 100 90 Relative current transfer ratio (%) 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 Shield moving distance L (mm) IF=5mA VCE=5V L=0 L Fig.12 Detecting Position Characteristics (2) 100 90 Relative current transfer ratio (%) 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 Shield moving distance L (mm) IF=5mA VCE=5V L L=0 Sheet No.: D3-A00102EN Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 6 GP1S25J0000F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.6mm or more from the top of elements. (Example) 1.6mm or more 1.6mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 20 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy Sheet No.: D3-A00102EN 7 GP1S25J0000F ■ Manufacturing Guidelines ● Storage and management after open Storage condition Storage temp.: 5 to 30˚C, Storage humidity : 70%RH or less at regular packaging. Treatment after opening the moisture-proof package After opening, you should mount the products while keeping them on the condition of 5 to 25˚C and 70%RH or less in humidity within 4 days. After opening the bag once even if the prolonged storage is necessary, you should mount the products within two weeks. And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products and silicagel are sealed up again, you should keep them under the condition of 5 to 30˚C and 70%RH or less in humidity. Baking before mounting When the above-mentioned storage method could not be executed, please process the baking treatment before mounting the products. However the baking treatment is permitted within one time. Recommended condition : 125˚C, 16 to 24 Hour ∗Do not process the baking treatment with the product wrapped. When the baking treatment processing, you should move the products to a metallic tray or fix temporarily the products to substrate. ● Soldering Method Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please solder within one time. MAX 240˚C 1 to 4˚C/s 200˚C MAX 160˚C 1 to 4˚C/s 1 to 4˚C/s 25˚C MAX10s MAX120s MAX60s MAX90s Sheet No.: D3-A00102EN 8 GP1S25J0000F Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please take care not to let any external force exert on lead pins. Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Note for installing Please don't give force to lead. Because inner 2-leads in 4-leads are put in package by forming, they may come off by force. Lead pin Lead terminals of this product are tin copper alloy plated. Before usage, please evaluate solderability with actual conditions and confirm. And the uniformity in color for the lead terminals are not specified. ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame ret