Compact Transmissive Photointerrupter

www.DataSheet4U.com GP1S196HCZ0F/GP1S196HCZSF GP1S196HCZ0F GP1S196HCZSF Gap : 1.1mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter ■ Description GP1S196HCZ0F is a compact-package, photo-transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device is half the size of the rest of the parts in this family. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example : printer, lens control for camera ■ Features 1. Transmissive with phototransistor output 2. Highlights : • Compact Size • Low Profile • Narrow Gap • Through-hole : GP1S196HCZ0F • SMT : GP1S196HCZSF 3. Key Parameters : • Gap Width : 1.1mm • Slit Width (detector side): 0.3mm • Package : 3.1×2×2.7mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A01001EN Date Jun. 30. 2005 © SHARP Corporation GP1S196HCZ0F/GP1S196HCZSF ■ Internal Connection Diagram Top view 2 1 1 2 3 4 3 4 Anode Collector Emitter Cathode ■ Outline Dimensions Through-Hole [GP1S196HCZ0F] 2−(0.3) 2−(0.7) Top view a (Unit : mm) SMT Gullwing Lead-Form [GP1S196HCZ0F] 2−(0.3) 2−(0.7) 2−(1.62) 2−(1.5) 2−(1.75) a-aʼ section G at e Top view a 2 (R 0. 2) a' 3.1 1.1 0. 2) 4− 2−(1.5) 2−(1.75) a-aʼ section G at e 4− (R 2−(1.62) a' 3.1 2.7 2.7 (0.3) Slit width (1.2) 2 1.1 (0.3) Slit width (1.2) n tio si po n tio si po 2.1 (0.04) 2.1 Identification mark ∗2 2−(0.85) (2.15) (1.05) 3 4−0.15 2−1.7±0.3 4−0.3 ∗1.3 2−1.5±0.3 (0.75) Center of light path ∗0.1 2−(0.85) 4 0. Identification mark ∗3.2±0.2 (0.75) Center of light path ∗4−0.3 ∗1.3 4 0. (2.15) (1.05) 3 4 Same potential as 1 4 Same potential as 1 2−(0.2) 2 1 2−(0.2) 2 1 Same potential as 3 ∗2−1.85 3 Same potential as • Unspecified tolerance : ±0.1mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured from the lead base. • The dimensions shown do not include those of burrs. Burr's dimensions : 0.15mm MAX. • The lead may be exposed at the painting out portion. • There is agreer identification mark on he light emitting side. • Unspecified tolerance : ±0.1mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured lead plating portion. • The dimensions shown do not include those of burrs. Burr's dimensions : 0.15mm MAX. • The lead may be exposed at the painting out portion. • There is agreer identification mark on he light emitting side. Product mass : approx. 0.022g Product mass : approx. 0.02g Plating material : SnCu (Cu : TYP. 2%) Country of origin Japan Sheet No.: D3-A01001EN 2 GP1S196HCZ0F/GP1S196HCZSF ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ Symbol Rating IF 30 VR 6 P 75 VCEO 35 VECO 6 IC 20 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C ) Unit mA V mW V V mA mW mW ˚C ˚C ˚C 0.3mm or more Soldering area (GP1S196HCZ0F) 1 For 3s or less ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=40μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 100 − − − TYP. 1.2 − − − − 50 50 (Ta=25˚C ) MAX. Unit 1.4 V 10 μA 100 nA 400 μA 0.4 V 150 μs 150 Sheet No.: D3-A01001EN 3 GP1S196HCZ0F/GP1S196HCZSF Fig.1 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) 40 30 20 10 0 25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Fig.2 Power Dissipation vs. Ambient Temperature 120 100 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 Ptot Power dissipation P, Pc, Ptot (mW) P,Pc Ambient temperature Ta (˚C) Fig.3 Forward Current vs. Forward Voltage 100 Fig.4 Collector Current vs. Forward Current 1.1 1 0.9 Collector current IC (mA) VCE=5V Ta=25˚C Forward current IF (mA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 Ta=85˚C 65˚C 45˚C 25˚C 0˚C −25˚C 1 0 0.5 1 1.5 2 Forward voltage VF (V) 0 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA) Fig.5 Collector Current vs. Collectoremitter Voltage 2 Ta 25˚C IF 30mA Fig.6 Relative Collector Current vs. Ambient Temperature 130 120 110 Relative collector current (%) 100 90 80 70 60 50 40 30 20 10 0 −25 IF=5mA VCE=5V IC=100% at Ta=25˚C 1.6 Collector current IC (mA) 1.2 20mA 0.8 10mA 0.4 5mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 0 25 50 75 Ambient temperature Ta (C) Sheet No.: D3-A01001EN 4 GP1S196HCZ0F/GP1S196HCZSF Fig.7 Collector-emitter Saturation Votage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 −25 0 25 50 75 IF=10mA IC=40μA Fig.8 Collector Dark Current vs. Ambient Temperature 10 6 VCE 20V Collector dark current ICEO (A) 10 7 10 8 10 9 10 10 0 25 50 75 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance 1 000 VCE=5V IC=100μA Ta=25˚C tr Fig.10 Test Circuit for Response Time VCC RD Input RL Output Input Output 10% 90% Response time (μs) 100 tf td ts td tr ts tf 10 1 0.1 1 10 Load resistance RL (kΩ) 100 Fig.11 Relative Collector Current vs. Shield Distance (1) 100 90 Relative collector current (%) 80 70 60 50 40 30 20 10 0 0 IF=5mA VCE=5V 0.5 1 1.5 2 0 L Fig.12 Relative Collector Current vs. Shield Distance (1) 100 90 Relative collector current (%) 80 70 60 50 40 30 20 10 0 0 IF=5mA VCE=5V 0.5 1 1.5 2 L 0 Shield moving distance L (mm) Sheet No.: D3-A01001EN Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 5 GP1S196HCZ0F/GP1S196HCZSF ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.4mm or more from the top of elements. (Example) 1.4mm or more 1.4mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Recommended Foot Print (Only for GP1S196HCZSF) 3.7 1.65 1.3 0.7 0.6 Sheet No.: D3-A01001EN 6 GP1S196HCZ0F/GP1S196HCZSF ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 20 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy Lead frame plating SnCu plating Sheet No.: D3-A01001EN 7 GP1S196HCZ0F/GP1S196HCZSF ■ Manufacturing Guidelines ● Storage and management after open (Only for GP1S196HCZSF) Storage condition Storage temp.: 5 to 30˚C, Storage humidity : 70%RH or less at regular packaging. Treatment after opening the moisture-proof package After opening, you should mount the products while keeping them on the condition of 5 to 25˚C and 70%RH or less in humidity within 4 days. After opening the bag once even if the prolonged storage is necessary, you should mount the products within two weeks. And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products and silicagel are sealed up again, you should keep them under the condition of 5 to 30˚C and 70%RH or less in humidity. Baking before mounting When the above-mentioned storage method could not be executed, please process the baking treatment before mounting the products. However the baking treatment is permitted within one time. Recommended condition : 125˚C, 16 to 24 hours ∗Do not process the baking treatment with the product wrapped. When the baking treatment processing, you should move the products to a metallic tray or fix temporarily the products to substrate. ● Soldering Method Reflow Soldering (Only for GP1S196HCZSF) : Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please solder within one time. MAX 240˚C 1 to 4˚C/s 200˚C MAX 160˚C 1 to 4˚C/s 1 to 4˚C/s 25˚C MAX10s MAX120s MAX60s MAX90s Sheet No.: D3-A01001EN 8 GP1S196HCZ0F/GP1S196HCZSF Flow Soldering: Soldering should be completed below 260˚C and within 3 s. Please solder within one time. Soldering area is 0.3mm or more away from the bottom of housing. Please take care not to let any external force exert on