Compact Transmissive Photointerrupter

www.DataSheet4U.com GP1S093HCZ0F GP1S093HCZ0F Gap : 2mm Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter ■ Description GP1S093HCZ0F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. The device has a low profile, and wide gap. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example : printer, lens control for camera ■ Features 1. Transmissive with phototransistor output 2. Highlights : • Compact Size 3. Key Parameters : • Gap Width : 2mm • Slit Width (detector side): 0.3mm • Package : 4.5×2.6×2.9mm 4. Lead free and RoHS directive compliant Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A00401EN Date Oct. 3. 2005 © SHARP Corporation GP1S093HCZ0F ■ Internal Connection Diagram Top view 1 2 3 3 4 4 2 1 Anode Collector Emitter Cathode ■ Outline Dimensions Top view aʻ (Unit : mm) a (C0.3) (0.75) 4.5 2 Optical center (C0.3) (C0.4) 2.9 2.6 a-aʼ section (0.3) Slit width 2.1 ∗∗∗ ∗∗∗ ∗∗ ∗∗∗ 0.4 ∗2 0.15+0.2 −0.1 ∗3.55 3 4 2 1 • Unspecified tolerance shall be ±0.2mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured from the lead base. • The dimensions shown do not include those of burrs. Burr's dimension shall be 0.15mm MAX. • The lead may be exposed at the shaded portion. • ∗∗ This portion has no solder plating. • ∗∗∗ This portion does not have any solder plating in some cases. Product mass : approx. 0.05g Plating material : SnCu (Cu : TYP. 2%) Country of origin Japan 3.5±0.5 Sheet No.: D3-A00401EN 2 GP1S093HCZ0F ■ Absolute Maximum Ratings Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature ∗ Symbol Rating IF 50 VR 6 P 75 VCEO 35 VECO 6 20 IC 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C ) Unit mA V mW V V mA mW mW ˚C ˚C ˚C 1mm or more Soldering area 1 For 5s or less ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=40μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 100 − − − TYP. 1.2 − − − − 50 50 (Ta=25˚C ) MAX. Unit 1.4 V 10 μA 100 nA 400 μA 0.4 V 150 μs 150 μs Sheet No.: D3-A00401EN 3 GP1S093HCZ0F Fig.1 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) 40 30 20 10 0 25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Fig.2 Power Dissipation vs. Ambient Temperature 120 100 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 Ptot Power dissipation P, Pc, Ptot (mW) P, Pc Ambient temperature Ta (˚C) Fig.3 Forward Current vs. Forward Voltage 100 25˚C 50˚C 75˚C 10 25˚C 0˚C Fig.4 Collector Current vs. Forward Current 1.1 1 0.9 Collector current IC (mA) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE=5V Ta=25˚C Forward current IF (mA) 1 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Forward voltage VF (V) 3 0.1 0 0 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA) Fig.5 Collector Current vs. Collector-emitter Voltage 3.3 3 2.7 Collector current IC (mA) 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 1 2 3 4 5 6 7 8 9 10 Collector-emitter voltage VCE (V) IF=5mA IF=30mA IF=20mA IF=10mA IF=40mA Ta=25˚C Fig.6 Relative Collector Current vs. Ambient Temperature 120 110 100 IF 5mA VCE 5V IF=50mA Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 25 0 25 50 75 Ambient temperature Ta (˚C) Sheet No.: D3-A00401EN 4 GP1S093HCZ0F Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 −25 0 25 50 75 IF=10mA IC=40μA Fig.8 Collector Dark Current vs. Ambient Temperature 10 6 VCE 20V Collector dark current ICEO (A) 10 7 10 8 10 9 10 10 0 25 50 75 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.9 Response Time vs. Load Resistance 1 000 VCE 5V IC 100 A Ta 25˚C Fig.10 Test Circuit for Response Time VCC RD Input RL Output Input Output 10% 90% Response time ( s) 100 tf tr td tr td ts ts tf 10 1 0.1 1 10 100 Load resistance RL (k ) Fig.11 Detecting Position Characteristics (1) 100 90 Relative collector current (%) 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 Shield moving distance L (mm) IF=5mA VCE=5V Fig.12 Detecting Position Characteristics (2) 100 90 Relative collector current (%) 80 L=0 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 Shield moving distance L (mm) L IF=5mA VCE=5V L=0 L Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A00401EN 5 GP1S093HCZ0F ■ Design Considerations ● Design guide 1) Prevention of faulty operation To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.6mm or more from the top of elements. (Example) 1.6mm or more 1.6mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 20 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy Lead frame plating SnCu plating Sheet No.: D3-A00401EN 6 GP1S093HCZ0F ■ Manufacturing Guidelines ● Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please solder within one time. Soldering area is 1mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at room temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alcohol and Isopropyl alcohol. ● Presence of ODC This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). •Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE). Sheet No.: D3-A00401EN 7 GP1S093HCZ0F ■ Package specification ● Sleeve package Package materials Sleeve : Polystyrene Stopper : Styrene-Elastomer Package method MAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 50 sleeves in one case. Sheet No.: D3-A00401EN 8 GP1S093HCZ0F ■ Important Notices · The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. · Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. · Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the