Compact Transmissive Photointerrupter

GP1A91LCJ00F GP1A91LCJ00F Gap : 1.2mm, Slit : 0.23mm *OPIC Output, Compact Transmissive Photointerrupter ■ Description GP1A91LCJ00F is a compact-package, OPIC output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device has 2 positioning bosses on the detector side, open collector for the deviceʼs output. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. Detection of object presence or motion. 2. Example : printer, lens control for camera ■ Features www.DataSheet4U.com 1. Transmissive with OPIC output 2. Highlights : • Compact Size 3. Key Parameters : • Gap Width : 1.2mm • Slit Width (detector side): 0.23mm • Package : 3.7×2.6×3.1mm 4. Lead free and RoHS directive compliant * "OPIC"(Optical IC) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and a signalprocessing Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A01601EN Date Oct. 3. 2005 © SHARP Corporation GP1A91LCJ00F ■ Internal Connection Diagram Top view 3 4 1 1 2 3 4 2 5 5 Amp. Anode Cathode VCC VO GND ■ Outline Dimensions Top view b' a' (Unit : mm) a-a' section (0.8) 1.4 0.3 b a b-b' section (0.23) 1.25 (0.85) 3.7 1.2 (C0.4) Emitter Center (C0.3) 0.15+0.2 −0.1 ∗2.65 SHARP mark "S" 2.6 2 2.3 3.1 φ0.6 3.6±0.5 Residual gates (2) 5−0.4 (0.5) 4−(0.25) ∗1 ∗1 5 4 3 2 1 • Unspecified tolerance : ±0.2mm. • Dimensions in parenthesis are shown for reference. • The dimensions indicated by ∗ refer to those measured from the lead base. • The dimensions shown do not include those of burrs and residual gates. Burr's dimensions : 0.15mm MAX. Residual gate : 0.3mm MAX. Product mass : approx. 0.052g Plating material : SnCu (Cu : TYP. 2%) Country of origin Japan (0.5) Sheet No.: D3-A01601EN 2 GP1A91LCJ00F ■ Absolute Maximum Ratings Parameter ∗1 Forward current Reverse voltage Input Power dissipation Supply voltage Output ∗1 Out put current ∗1 Power dissipation Operating temperature Storage temperature ∗2 Soldering temperature ∗ ∗ Symbol Rating IF 50 VR 6 P 75 VCC 7 IO 2 PO 80 Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C) Unit mA V mW V mA mW ˚C ˚C ˚C 1mm or more Soldering area 1 Refer to Fig. 2, 3, 4. 2 For 5s or less ■ Electro-optical Characteristics Parameter Forward voltage Input Reverse current Operating supply voltage Low level output voltage High level output voltage Output Low level supply current High level supply current ∗3 "High→Low" threshold input current ∗4 Hysteresis Transfer "Low→High" Propagation delay time charac"High→Low" Propagation delay time teristics Rise time Fall time Responce time Symbol VF IR VCC VOL VOH ICCL ICCH IFHL IFLH/IFHL tPLH tPHL tr tf Condition IF=5mA VR=3V − VCC=3V, IOL=1mA, IF=5mA VCC=3V, IF=0 VCC=3V, IF=5mA VCC=3V, IF=0 VCC=3V VCC=3V VCE=3V, IF=5mA, RL=2.4kΩ MIN. − − 1.4 − 2.9 − − − 0.55 − − − − TYP. 1.15 − − 0.1 − 0.7 0.3 1.2 0.8 10 3 0.6 0.2 (Ta=25˚C) MAX. Unit 1.25 V 10 μA 7 V 0.4 V V − 1.2 mA 0.5 mA 3.5 mA 0.95 − 30 15 μs 3 1 In order to measure the characteristics above except response time, connect a resistance RL=15kΩ between VCC and VO. ∗ 3 IFHL represents forward current when output goes from "High" to "Low". ∗ 4 IFLH represents forward current when output goes from "Low" to "High". Sheet No.: D3-A01601EN 3 GP1A91LCJ00F Fig.1 Test Circuit for Response Time VCC 3V Amp. Vin 47Ω 0.1μF GND tr=tf=0.01μs ZO=50Ω tf tr 2.4kΩ VO tPHL tPLH VOH Input 50% 90% VOL 1.5V 10% Fig.2 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) 40 30 20 10 0 −25 Fig.3 Output Current vs. Ambient Temperature 3 2.5 Output current IO (mA) 2 1.5 1 0.5 0.4 0 25 50 75 85 100 0 −25 0 25 50 75 85 100 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig.4 Output Power Dissipation vs. Ambient Temperature 120 100 80 60 40 20 16 0 −25 Fig.5 Forward Current vs. Forward Voltage Output power dissipation PO (mW) Ta=75˚C 50˚C Forward current IF (mA) 100 25˚C 0˚C −25˚C 10 1 0 25 50 75 85 100 0 0.5 1 1.5 2 2.5 3 3.5 Ambient temperature Ta (˚C) Forward voltage VF (V) Sheet No.: D3-A01601EN 4 GP1A91LCJ00F Fig.6 Relative Threshold Input Current vs. Supply Voltage 1.2 Relative threshold input current IFHL,IFLH IFHL 1 0.8 0.6 0.4 0.2 0 0 2.5 5 7.5 10 Supply voltage VCC (V) Ta=25˚C IFHL=1 at VCC=3V Fig.7 Relative Threshold Input Current vs. Ambient Temperature 1.8 Relative threshold input current IFHL,IFLH 1.6 1.4 1.2 1 0.8 0.6 0.4 −25 IFLH VCC=3V IFHL=1 at Ta=25˚C IFHL IFLH 0 25 50 75 100 Ambient temperature Ta (˚C) Fig.8 Low Level, High Level Supply Current vs. Supply Voltage (1) 2.2 Low level, high level supply current ICC (mA) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 Supply voltage VCC (V) ICCH ICCL ICCL:IF=5mA ICCH:IF=0 Ta=−25˚C RL=15kΩ Fig.9 Low Level, High Level Supply Current vs. Supply Voltage (2) 2.2 Low level, high level supply current ICC (mA) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 Supply voltage VCC (V) ICCH ICCL ICCL:IF=5mA ICCH:IF=0 Ta=25˚C RL=15kΩ Fig.10 Low Level, High Level Supply Current vs. Supply Voltage (3) 2.2 Low level, high level supply current ICC (mA) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 Supply voltage VCC (V) ICCH ICCL ICCL:IF=5mA ICCH:IF=0 Ta=85˚C RL=15kΩ Fig.11 Low Level Output Voltage vs. Low Level Output Current 220 200 Low level output voltage VOL (mV) 180 160 140 120 100 80 60 40 20 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Low level output current IOL (mA) Sheet No.: D3-A01601EN IF=5mA VCC=3V Ta=25˚C RL=15kΩ 3 5 GP1A91LCJ00F Fig.12 Low Level Output Voltage vs. Ambient Temperature 0.4 IF=5mA VCC=3V RL=15kΩ Fig.13 Rise Time, Fall Time vs. Load Resistance 1.6 1.4 Rise time, fall time tf,tr (μs) 1.2 1 0.8 0.6 0.4 0.2 tf 1 10 100 VCC=3V IF=5mA Ta=25˚C Low level output voltage VOL (V) tr 0.3 0.2 IOL=2mA 0.1 IOL=0mA 0 −25 IOL=1mA 0 25 50 75 100 0 0.1 Ambient temperature Ta (C) Load resistance RL (kΩ) Fig.14 Propagation Delay Time vs. Forward Current 10 Propagation delay time tPHL,tPLH (μs) VCC=3V RL=2.4kΩ Ta=25˚C tPLH Fig.15 Low, High Level Output vs. Shield Distance (1) (Typical Value) IF=5mA VCC=3V RL=15kΩ Ta=25˚C L=0 Shield Sensor 8 High Low, high level output 6 Shield distance L 4 2 tPHL Low 0 0 10 20 30 40 50 Forward current IF (mA) −1 0 1 2 3 Shield moving distance L (mm) Fig.16 Low, High Level Output vs. Shield Distance (2) (Typical Value) IF=5mA VCC=3V RL=15kΩ Ta=25˚C Shield L=0 Shield distance L Sensor High Low, high level output Low −1 0 1 2 Shield moving distance L (mm) Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A01601EN 6 GP1A91LCJ00F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.6mm or more from the top of elements. (Example) 1.6mm or more 1.6mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. Please decide the input current which become 2 times of MAX. IFHL. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) [Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit] Category Photo diode Material Silicon (Si) Maximum Sensitivity wavelength (nm) 900 Sensitivity wavelength (nm) 700 to 1 200 Response time (μs) 3 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 Sheet No.: D3-A01601EN 7 GP1A91LCJ00F • Material Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy Lead frame plating SnCu plating • Others Laser generator is not used. Sheet No.: D3-A01601EN 8 GP1A91LCJ00F ■ Manufacturing Guidelines ● Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please solder within one time. Soldering area is 1 mm or more away from the bottom of housing. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : Do not execute ultrasonic cleaning. Recommended solvent materials : Ethyl alcohol, Methyl alc