OPIC Output Case package Transmissive Photointerrupter



Part  Number GP1A57HRJ00F
Manufacturer Sharp Electrionic
Semiconductor DataSheet

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www.DataSheet4U.com GP1A57HRJ00F GP1A57HRJ00F Gap : 10mm, Slit : 1.8mm *OPIC Output Case package Transmissive Photointerrupter ■ Description GP1A57HRJ00F is a standard, OPIC output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. For this family of devices, the emitter and detector are inserted in a case, resulting in a through-hole design. This device has a wide gap. ■ Agency approvals/Compliance 1. Compliant with RoHS directive ■ Applications 1. General purpose detection of object presence or motion. 2. Example : Printer, FAX, Optical storage unit ■ Features 1. Transmissive with OPIC output 2. Highlights : • Vertical Slit for alternate motion detection • Output Low Level at intercepting optical path • Wide gap width (10mm) • Positioning Pin to prevent misalignment 3. Key Parameters : • Gap Width : 10mm • Slit Width (detector side) : 1.8mm • Package : 18.6×15.2×5mm 4. Lead free and RoHS directive compliant * "OPIC"(Optical IC) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and a signalprocessing Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. 1 Sheet No.: D3-A03901EN Date Oct. 3. 2005 © SHARP Corporation GP1A57HRJ00F ■ Internal Connection Diagram Top view Voltage regulator 3 Amp. 2 1 2 3 4 5 (15kΩ) 4 5 1 Anode Cathode VCC VO GND ■ Outline Dimensions 5 (Unit : mm) Detector center (2.5) Slit width (Detector side) 1.8±0.1 C1 18.6 10 GP1A57HR 15.2 5−0.4 C0.3 (1.5) (15.2) 8.95 5 1 Date code 0.7 1.5 5−0.45 (2.54) φ 0.7 φ0 3 4 2 • Tolerance : ±0.2mm • ( ) : Reference dimensions Product mass : approx. 0.7g Dip soldering material : Sn−3Ag−0.5Cu 2 .7 C 0. 2 4MIN. 3 φ1 .5 Sheet No.: D3-A03901EN 2 GP1A57HRJ00F Date code (2 digit) 1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z repeats in a 10 year cycle Country of origin Japan, Indonesia or Philippines (Indicated on the packing case) Sheet No.: D3-A03901EN 3 GP1A57HRJ00F ■ Absolute Maximum Ratings Parameter ∗1 Forward current ∗1, 2 Peak forward current Input Reverse voltage Power dissipation Supply voltage Output current Output Power dissipation Operating temperature Storage temperature ∗3 Soldering temperature ∗ ∗ ∗ Symbol Rating IF 50 IFM 1 VR 6 P 75 VCC −0.5 to +17 IO 50 250 PO Topr −25 to +85 Tstg −40 to +100 Tsol 260 (Ta=25˚C) Unit mA A V mW V mA mW ˚C ˚C ˚C 1 Refer to Fig. 1, 2, 3 2 Pulse width ≤ 100μs, Duty ratio=0.01 3 For 5s or less ■ Electro-optical Characteristics Input Parameter Symbol Forward voltage VF Reverse current IR Operating supply voltage VCC Low level output voltage VOL High level output voltage VOH Low level supply current ICCL High level supply current ICCH ∗4 "Low→High" threshold input current IFLH ∗5 Hysteresis IFHL/IFLH ∗6 "Low→High" Propagation delay time tPLH "High→Low" Propagation delay time tPHL Rise time tr Fall time tf Responce time Condition IF=7mA VR=3V − VCC=5V, IOL=16mA, IF=0 VCC=5V, IF=7mA VCC=5V, IF=0 VCC=5V, IF=7mA VCC=5V VCC=5V VCC=5V, IF=7mA, RL=280Ω MIN. − − 4.5 − 4.9 − − − 0.55 − − − − TYP. 1.14 − − 0.15 − 1.7 0.7 1 0.75 3 5 0.1 0.05 MAX. 1.4 10 17 0.4 − 3.8 2.2 7 0.95 9 15 0.5 0.5 Output Transfer characteristics (Ta=25˚C) Unit V μA V V V mA mA mA − μs ∗ ∗ ∗ 4 IFLH represents forward current when output goes from "Low" to "High". 5 IFHL represents forward current when output goes from "High" to "Low". 6 Test circuit for response time is shown in Fig.12. Sheet No.: D3-A03901EN 4 GP1A57HRJ00F Fig.1 Forward Current vs. Ambient Temperature 60 50 Forward current IF (mA) 40 30 Fig.2 Output Power Dissipation vs. Ambient Temperature 300 250 200 150 100 50 0 −25 20 10 0 −25 0 25 50 75 85 Ambient temperature Ta (˚C) 100 Output power dissipation PO (mW) 0 25 50 75 85 100 Ambient temperature Ta (C) Fig.3 Low Level Output Current vs. Ambient Temperature 60 Fig.4 Forward Current vs. Forward Voltage Ta=75˚C Low level output current IOL (mA) 50 40 30 20 10 0 −20 1 0 25 50 75 85 100 0 0.5 1 1.5 2 Forward current IF (mA) 100 50˚C 25˚C 0˚C −25˚C 10 2.5 3 Ambient temperature Ta (˚C) Foward voltage VF (V) Fig.5 Relative Threshold Input Current vs. Supply Voltage 1.1 Relative threshold input current IFHL,IFLH 1 0.9 0.8 IFHL 0.7 0.6 0.5 0 5 10 15 20 25 Supply voltage VCC (V) IFLH Ta=25˚C IFLH=1 at VCC=5V Fig.6 Relative Threshold Input Current vs. Ambient Temperature 1.6 Relative threshold input current IFHL,IFLH 1.4 1.2 IFLH 1 0.8 0.6 0.4 −25 IFHL VCC=5V IFLH=1 at Ta=25˚C 0 25 50 75 100 Ambient temperature Ta (˚C) Sheet No.: D3-A03901EN 5 GP1A57HRJ00F Fig.7 Low Level Output Voltage vs. Low Level Output Current 1 Fig.8 Low Level Output Voltage vs. Ambient Temperature 0.6 VCC=5V VCC=5V Ta=25˚C Low level output voltage VOL (V) Low level output voltage VOL (V) 0.5 0.4 0.3 0.2 0.1 0.1 IOL=30mA 16mA 5mA 0.01 1 10 100 0 −25 0 25 50 75 100 Low level output current IOL (mA) Ambient temperature Ta (˚C) Fig.9 Supply Current vs. Ambient Temperature 3 2.5 Supply current ICC (mA) 2 1.5 1 VCC=17V 0.5 10V 0 −25 0 25 50 ICCH 5V 75 100 VCC=17V 10V ICCL 5V Fig.10 Propagation Delay Time vs. Forward Current 12 Propagation delay time tPLH, tPHL (μs) 10 8 6 4 tPLH 2 0 0 10 20 30 40 50 60 VCC=5V RL=280Ω Ta=25˚C tPHL Ambient temperature Ta (˚C) Forward current IF (mA) Fig.11 Rise Time,Fall Time vs. Load Resistance 0.8 0.7 Rise time, fall time tr, tf (μs) 0.6 0.5 0.4 0.3 tr Ta=25˚C VCC=5V IF=7mA Fig.12 Test Circuit for Response Time Voltage regulator Input (15kΩ) tr=tf=0.01μs ZO=50Ω 47Ω Amp. GND Input +5V 280Ω Output 0.01μF 0.2 0.1 0 0.1 tf 1 Load resistance RL (kΩ) 10 Output tr tPLH 50% tPHL 10% tf V 90% OH 1.5V VOL Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. Sheet No.: D3-A03901EN 6 GP1A57HRJ00F ■ Design Considerations ● Recommended operating conditions Parameter Output current Forward current Operating terperature Symbol IO IF Topr MIN. − 10 0 TYP. − − − MAX. 16 20 70 Unit mA mA ˚C ● Notes about static electricity Transisiter of detector side in bipolar configuration may be damaged by static electricity due to its minute design. When handing these devices, general countermeasure against static electricity should be taken to avoid breakdown of devices or degradation of characteristics. ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) In order to stabilize power supply line, connect a by-pass capacitor of more than 0.01μF between VCC and GND near the device. 3) Position of opaque board Opaque board shall be installed at place 4mm or more from the top of elements. (Example) 4mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. Sheet No.: D3-A03901EN 7 GP1A57HRJ00F ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) [Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit] Category Photodiode Maximum Sensitivity wavelength (nm) 900 Sensitivity wavelength (nm) 400 to 1 200 Response time (μs) 3 • Photo emitter (qty. : 1) Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3 • Material Case Black NORYL resin Lead frame plating Solder dip. (Sn−3Ag−0.5Cu) • Others Laser generator is not used. Sheet No.: D3-A03901EN 8 GP1A57HRJ00F ■ Manufacturing Guidelines ● Soldering Method Flow Soldering: Soldering should be completed below 260˚C and within 5 s. Please take care not to let any external force exert on lead pins. Please don't do soldering with preheating, and please don't do soldering by reflow. Hand soldering Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature. Other notice Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Flux Some flux, which is used in soldering, may crack the package due to synergistic effect of alcohol in flux and the rise in temperature by heat in soldering. Therefore, in using flux, please make sure that it does not have any influence on appearance and reliability of the photointerrupter. Sheet No.: D3-A03901EN 9 GP1A57HRJ00F ● Cleaning instructions Solvent cleaning : Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less. Ultrasonic cleaning : The effect to device by ultrasonic cleaning differs by cleaning bath size, ultrasonic power output, cleaning time, PCB size or device mounting condition etc. Please test it in actual using condition and confirm that doesn't occur any defect before starting the ultrasonic cleaning. Re



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