NPN EPITAXIAL PLANAR TRANSISTOR

ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B G M B TA 4 2 Description Package Dimensions NP N EP ITAXIAL PL ANAR T RANS ISTO R The GMBTA42 is designed for high voltage transistor. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : www.DataSheet4U.com Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 300 300 6 500 350 Unit V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob at Ta = 25 : Min. 300 300 6 25 40 40 50 Typ. 3 MHz pF Max. 100 100 500 900 Unit V V V nA nA mV mV IC=100uA , IE=0 IC=1mA ,IB=0 IE=100uA ,IC=0 VCB=200V, IE=0 VEB=6V ,IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, f=1MHz Test Conditions 1/2 ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2