ISSUED DATE :2004/08/27 REVISED DATE :
GM BT8550L
Description Package Dimensions
P N P E P I TA X I A L T R A N S I S T O R
The GMBT8550L(large current) is designed for general purpose amplifier applications.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
www.DataSheet4U.com
Symbol Tj Tstg VCBO VCEO VEBO IC PD
Ratings +150 -55 ~ +150 -40 -25 -6 1.5 250
Unit
Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation
V V V A mW
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE hFE hFE fT Cob
at Ta = 25 :
Min. -40 -25 -6 45 120 40 100 Typ. Max. -100 -100 -0.5 -1.2 -1 500 10 MHz pF Unit V V V nA nA V V V IC=-100uA IC=-2mA IE=-100uA VCB=-35V, IE=0 VEB=-6V,IC=0 IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V,IC=-10mA VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz Test Conditions
Classification Of hFE
Rank hFE BLC 120 - 200 BLD 160 - 300 BLE 250 - 500
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ISSUED DATE :2004/08/27 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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