NPN EPITAXIAL PLANAR TRANSISTOR

GM BT5551 Description 1/2 NP N E PITAXI AL P L ANAR T RANS ISTO R The GMBT5551 is designed for general purpose applications requiring high breakdown voltages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 C 0C Absolute Maximum Ratings Parameter www.DataSheet4U.com Symbol Tj Tstg VCBO VCES VEBO IC PD Ratings +150 -55 ~ +150 180 160 6.0 600 225 Unit Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob at Ta = 25 : Min. 180 160 6 80 80 30 100 Typ. Max. 50 50 150 200 1 1 250 300 6 MHz pF Unit V V V nA nA mV mV V V IC=100uA IC=1mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz Test Conditions 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165