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Pb Free Plating Product
ISSUED DATE :2006/01/20 REVISED DATE :
GM2308
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 160m 3A
The GM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GM2308 is universally used for all commercial-industrial surface mount applications.
Description
Features
*Simple Drive Requirement *Small Package Outline
Package Dimensions SOT-89
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V 3 Continuous Drain Current , VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Ratings 60 ±20 3.0 2.3 10 1.5 0.01 -55 ~ +150 Value 83.3
Unit V V A A A W W/ : : Unit : /W
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
GM2308
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ISSUED DATE :2006/01/20 REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 60 1.0 -
Typ. 0.05 5.0 6 1.6 3 6 5 16 3 490 55 40
Max. 3.0 ±100 10 25 160 220 10 780 -
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=3A VGS= ±20V VDS=60V, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=2.0A VGS=4.5V, ID=1.7A ID=3A VDS=48V VGS=4.5V VDS=30V ID=1A VGS=10V RG=3.3 RD=30 VGS=0V VDS=25V f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD Trr Qrr
Min. -
Typ. 25 26
Max. 1.2 -
Unit V ns nC
Test Conditions IS=1.2A, VGS=0V IS=3A, VGS=0V dI/dt=100A/ s
Reverse Recovery Time Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
GM2308
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ISSUED DATE :2006/01/20 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GM2308
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2006/01/20 REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GM2308
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