N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B GM2306A N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 40m 5A The GM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GM2306A is universally used for all commercial-industrial surface mount applications. Description *Capable of 2.5V gate drive *Lower on-resistance Features Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current , VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings 30 ±12 5 4 20 1.5 0.012 -55 ~ +150 Value 83.3 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. GM2306A Page: 1/4 www.DataSheet4U.com ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 30 0.5 - Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70 Max. 1.2 ±100 1 25 35 40 50 90 15 1050 - Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=5A VGS= ±12V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=5A Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance RDS(ON) - m VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A ID=5A VDS=16V VGS=4.5V VDS=15V ID=5A VGS=10V RG=3.3 RD=3 VGS=0V VDS=25V f=1.0MHz Total Gate Charge 2 Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. - Typ. 14 7 Max. 1.2 - Unit V ns nC Test Conditions IS=1.2A, VGS=0V IS=5A, VGS=0V dI/dt=100A/ s Reverse Recovery Time2 Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GM2306A Page: 2/4 www.DataSheet4U.com ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GM2306A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 www.DataSheet4U.com ISSUED DATE :2006/01/20 REVISED DATE :2006/05/03B Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GM2306A Page: 4/4