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Pb Free Plating Product
ISSUED DATE :2004/12/21 REVISED DATE :
GJ9960
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
40V 16m 42A
The GJ9960 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Low Gate Charge *Fast Switching
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg
Ratings 40 ±20 42 26 195 45 -55 ~ +150 0.36
Unit V V A A A W : W/ :
Total Power Dissipation
Operating Junction and Storage Temperature Range
Linear Derating Factor
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.8 110 Unit : /W : /W
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Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 40 1.0 -
Typ. 0.032 30 18 6 12 9 110 23 10 1500 250 180
Max. 3.0 ±100 1 25 16 25 -
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=20A VGS= ±20V VDS=40V, VGS=0 VDS=32V, VGS=0 ID=20A, VGS=10V ID=18A, VGS=4.5V ID=20A VDS=20V VGS=4.5V VDS=20V ID=20A VGS=10V RG=3.3 RD=1 VGS=0V VDS=25V f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Symbol VSD Trr Qrr Min. Typ. 22 27.4 Max. 1.3 Unit V ns nC Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%.
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Characteristics Curve
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Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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