www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/02/21 REVISED DATE :
GJ9915
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 50m 20A
The GJ9915 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Single Drive Requirement
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 : ID @TC=125 : IDM PD @TC=25 : Tj, Tstg
Ratings 20 ±12 20 16 41 26 0.2 -55 ~ +150
Unit V V A A A W W/ : :
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4.8 110 Unit : /W : /W
GJ9915
Page: 1/5
ISSUED DATE :2005/02/21 REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 20 0.5 -
Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50
Max. 1.2 ±100 1 25 50 80 -
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= ±12V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=5.2 A ID=10A VDS=20V VGS=5V VDS=10V ID=10A VGS=5V RG=3.3 RD=1 VGS=0V VDS=20V f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=125 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD IS ISM
1
Min. -
Typ. -
Max. 1.3 20 41
Unit V A A
Test Conditions IS=20A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.3V
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%.
GJ9915
Page: 2/5
ISSUED DATE :2005/02/21 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Maximum Drain Current v.s. Case Temperature
GJ9915
Fig 6. Type Power Dissipation
Page: 3/5
ISSUED DATE :2005/02/21 REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of Reverse Diode
GJ9915
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
Page: 4/5
ISSUED DATE :2005/02/21 REVISED DATE :
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ9915
Page: 5/5
