PNP EPITAXIAL TRANSISTOR



Part  Number GJ8550
Manufacturer GTM
Semiconductor DataSheet

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www.DataSheet4U.com CORPORATION GJ8550 Description Features PNP EPITAXIAL TRANSISTOR ISSUED DATE :2005/05/06 REVISED DATE : The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8050 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 : Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Base Current Junction Temperature Storage Temperature Range Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO -40 VCEO -25 VEBO -6 IC -1.5 IB -0.5 Tj +150 TsTG -55 ~ +150 PD 1.25 Unit V V V A A : : W Electrical Characteristics (Ta = 25 : Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. -40 -25 -6 45 120 40 100 Typ. 9 , unless otherwise specified) Max. Unit Test Conditions V IC=-100uA V IC=-2mA V IE=-100uA -100 nA VCB=-35V -100 nA VBE=-6V -0.5 V lC=-800mA, IB=-80mA -1.2 V lC=-800mA, IB=-80mA -1 V VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA 500 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA MHz VCE=-10V, IC=-50mA, f=100MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE2 Rank Range C 120 ~ 200 D 160 ~ 300 E 250 ~ 500 GJ8550 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/05/06 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ8550 Page: 2/2



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