NPN EPITAXIAL TRANSISTOR



Part  Number GJ8050
Manufacturer GTM
Semiconductor DataSheet

DataSheet View

www.DataSheet4U.com ISSUED DATE :2005/05/06 REVISED DATE : GJ8050 Description Features NPN EPITAXIAL TRANSISTOR The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8550 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 : Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO VCEO VEBO IC IB Tj TsTG PD 40 25 6 1.5 0.5 +150 -55 ~ +150 1.25 Unit V V V A A : : W Electrical Characteristics (Rating at 25 : Symbol Min. Typ. ambient temperature unless otherwise specified) Unit Test Conditions Max. BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob 40 25 6 45 120 40 100 - 9 100 100 0.5 1.2 1.0 500 - V V V nA nA V V V MHz pF IC=100uA IC=2mA IE=100uA VCB=35V VBE=6V lC=800mA, IB=80mA lC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE2 Rank Range C 120 ~ 200 D 160 ~ 300 E 250 ~ 500 GJ8050 Page: 1/2 ISSUED DATE :2005/05/06 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ8050 Page: 2/2



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