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Pb Free Plating Product
ISSUED DATE :2006/09/05 REVISED DATE :
GE75NF75
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
75V 11m 80A
The GE75NF75 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*High Density Cell Design for Ultra Low On-Resistance *High power and Current handing capability
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 :
2
Ratings 75 ±25 80 56 200 268 1.78 350 38 -55 ~ +175
Unit V V A A A W W/ : mJ A :
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy
EAS IAS Tj, Tstg
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 0.56 60 Unit : /W : /W
GE75NF75
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ISSUED DATE :2006/09/05 REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : )
Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Min. 75 2.0 -
Typ. 34 114 33 18 21 39 70 24 7000 400 87
Max. 4.0 ±100 1 5 11 -
Unit V V S nA uA uA m
Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=15V, ID=40A VGS= ±25V VDS=75, VGS=0 VDS=60V, VGS=0 VGS=10V, ID=37.5A ID=30A VDS=30V VGS=10V VDS=30V VGS=10V RG=3 RL=1 VGS=0V VDS=30V f=1.0MHz
Static Drain-Source On-Resistance Total Gate Charge3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
3
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
3 3
Symbol VSD Trr Qrr IS
Min. -
Typ. 53 143 -
Max. 1.5 80
Unit V ns nC A
Test Conditions IS=75A, VGS=0V, Tj=25 : IS=30A, VGS=0V dI/dt=100A/ s VD= VG=0V, VS=1.5V
Reverse Recovery Time
Reverse Recovery Charge
Continuous Source Current (Body Diode)
Notes: 1. Pulse width limited by safe operating area. 2. Starting Tj=25 : , VDD=20V, L=0.1mH, RG=25 , IAS=20A. 3. Pulse width 300us, duty cycle 2%.
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ISSUED DATE :2006/09/05 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain Current and Gate Voltage
100 10
Fig 4. On-Resistance v.s. Junction Temperature
1
0.1
0.01
0.001
0.0001
Fig 5. On-Resistance v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
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ISSUED DATE :2006/09/05 REVISED DATE :
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Avalanche Capability
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
0.56 : /W
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
Fig 11. Normalized Maximum Transient Thermal Impedance Curve
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