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Pb Free Plating Product
ISSUED DATE :2006/06/06 REVISED DATE :
GE75N07
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
75V 11m 80A
The GE75N07 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristics *RoHS Compliant
Description
Features
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 :
3
Ratings 75 ±20 80 56 300 156 0.125 450 -55 ~ +150
Unit V V A A A W W/ : mJ :
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy
EAS Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 0.8 62 Unit : /W : /W
GE75N07
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ISSUED DATE :2006/06/06 REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 75 1.0 -
Typ. 0.08 40 83 10 51 15 73 340 200 4270 690 320 1.8
Max. 3.0 ±100 10 100 11 130 6830 2.7
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=1mA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=40A VGS= ±20V VDS=60, VGS=0 VDS=75V, VGS=0 VGS=10V, ID=40A ID=40A VDS=60V VGS=4.5V VDS=40V ID=30A VGS=10V RG=10 RD=1.33 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : )
VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Total Gate Charge
2
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Symbol VSD Trr Qrr Min. Typ. 90 235 Max. 1.5 Unit V ns nC Test Conditions IS=40A, VGS=0V, Tj=25 : IS=40A, VGS=0V dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. 3. Starting Tj=25 : , VDD=50V, L=1mH, RG=25 , IAS=30A.
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ISSUED DATE :2006/06/06 REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GE75N07
Fig 6. On-Resistance v.s. Drain Current
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ISSUED DATE :2006/06/06 REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GE75N07
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