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ISSUED DATE :2005/01/12 REVISED DATE :
GE13003
Description
NPN SILICON POWER TRANSISTOR
The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical. It is particularly suited for 115 and 220v Switch-mode.
Features & Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 : ` ` ` 1A, 100 : is 290ns(Typ) tc @
&700V Blocking Capability &SOA and Switching Application Information
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous -Peak(1) Base Current -Continuous -Peak(1) Emitter Current -Continuous -Peak(1) Total Power Dissipation at Ta=25 : Derate above 25 : Total Power Dissipation at Tc=25 : Derate above 25 : Symbol Tj Tstg VCEO(sus) VCEO VEBO ICM IB IBM IE IEM PD PD IC Ratings +150 -55 ~ +150 400 700 9 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 V V V A A A W mW/ : W mW/ : Unit
Thermal Characteristics
Parameter Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Maximum Lead Temperature for Soldering Purposes:1/8” from Case for 5 Seconds
(1)Pulse Test: Pulse Width=5ms, Duty Cycle 10%
Symbol R R
JA JC
Value 89 3.12 275
Unit /W /W
TL
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ISSUED DATE :2005/01/12 REVISED DATE :
Electrical Characteristics(Tc = 25
Parameter
*Off Characteristics(1) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current *On Characteristics(1) VCE(sat)1 Collector-Emitter Saturation Voltage VCE(sat)2 VCE(sat)3 VCE(sat)4 VBE(sat)1 Base-Emitter Saturation Voltage VBE(sat)2 VBE(sat)3 DC Current Gain Current-Gain Bandwidth Product Output Capacitance *Switching Characteristics Delay Time Rise Time Storage Time Fall Time Storage Time Crossover Time Fall Time Td Tr Ts Tf Tsv Tc Tfi ¯ % HFE1 HFE2 fT Cob VCEO(sus) ICEV IEBO
Unless otherwise specified)
Min.
400 8 5 4 -
Symbol
Typ.
10 21 0.05 0.5 2 0.4 1.7 0.29 0.15
Max.
1 5 1 0.5 1.0 3.0 1.0 1.0 1.2 1.1 40 25 0.1 1 4 0.7 4 0.75 -
Unit
V mA mA
Test Conditions
IC=10mA , IB=0 VCEV=Rated Value, V BE(off)=1.5V VCEV=Rated Value, V BE(off)=1.5V, TC=100 : VEB=9V IC=500mA, IB=100mA
V
IC=1A, IB=250mA IC=1.5A, IB=500mA IC=1A, IB=250mA, TC=100 : IC=500mA, IB=100mA
V
IC=1A, IB=250mA IC=1A, IB=250mA, TC=100 : VCE=2V, IC=500mA VCE=2V, IC=1A
MHz pF
VCE=10V, IC =100mA, f=1MHz VCB=10V, IE=0, f=0.1MHz
s
VCC=125V, IC =1A, IB1=IB2=0.2A, Tp=25 s, Duty Cycle 1%
s
IC=1A, Vclamp=300V, IB1=0.2A, VBE(off)=5Vdc, TC=100 :
(1)Pulse Test: Pulse Width=300 s, Duty Cycle
Classification Of HFE1
Rank Range A 8~16 B 15~21 C 20~26 D 25~31 E 30~36 F 35~40
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Characteristics Curve
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Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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