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International Rectifier
International Rectifier

GB15B60KD Datasheet

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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
www.DataSheet4U.com • Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
PD - 94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
VCES = 600V
IC = 15A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current „
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB15B60KD IRGS15B60KD IRGSL15B60KD
Max.
600
31
15
62
62
31
15
64
± 20
208
83
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.6
2.1
–––
62
40
–––
Units
°C/W
g
1
8/18/04
Page 1

IRG/B/S/SL15B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
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V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage 1.5
–––
–––
Gate Threshold Voltage
3.5
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.3 ––– V/°C
1.80 2.20
2.05 2.50 V
2.10 2.60
4.5 5.5 V
-10 ––– mV/°C
10.6 ––– S
5.0 150 µA
500 1000
1.20 1.45
1.20 1.45 V
––– ±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 15A, VGE = 15V
5, 6,7
IC = 15A, VGE = 15V TJ = 125°C 9, 10,11
IC = 15A, VGE = 15V TJ = 150°C
VCE = VGE, IC = 250µA
9, 10,11
VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
VCE = 50V, IC = 20A, PW=80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
8
IC = 15A TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg Total Gate Charge (turn-on)
Qge Gate - Emitter Charge (turn-on)
––– 56 84
––– 7.0 10
IC = 15A
nC VCC = 400V
CT1
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 26 39
––– 220 330
––– 340 455
––– 560 785
––– 34 44
––– 16 22
––– 184 200
VGE = 15V
µJ IC = 15A, VCC = 400V
VGE = 15V,RG = 22Ω, L = 200µH
Ls = 150nH
TJ = 25°C ƒ
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 200µH
ns Ls = 150nH, TJ = 25°C
CT4
CT4
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
––– 20 26
––– 355 470
IC = 15A, VCC = 400V
CT4
––– 490 600 µJ VGE = 15V,RG = 22Ω, L = 200µH
13,15
––– 835 1070
Ls = 150nH
TJ = 150°C ƒ WF1WF2
td(on)
tr
Turn-On Delay Time
Rise Time
––– 34 44
––– 18 25
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 200µH
14, 16
CT4
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 203 226 ns Ls = 150nH, TJ = 150°C
––– 28 36
WF1
WF2
Cies
Coes
Input Capacitance
Output Capacitance
––– 850 –––
––– 75 –––
VGE = 0V
pF VCC = 30V
Cres
RBSOA
SCSOA
Erec
trr
Irr
Reverse Transfer Capacitance
––– 35 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 62A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 22CT2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V,RG = 22
VCC = 360V, VGE = +15V to 0V
Reverse Recovery energy of the diode ––– 540 720 µJ TJ = 150°C
Diode Reverse Recovery time
––– 92 111 ns VCC = 400V, IF = 15A, L = 200µH
Diode Peak Reverse Recovery Current ––– 29 33 A VGE = 15V,RG = 22Ω, Ls = 150nH
CT3
WF4
17,18,19
20,21
CT4,WF3
Note  to „ are on page 15
2
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Page 2

IRG/B/S/SL15B60KD
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8
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10 µs
10
100 µs
1
1ms
DC
0.1
1
10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C
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100
10
1
0
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
1000
3
Page 3

IRG/B/S/SL15B60KD
100
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90 VGE = 18V
80 VGE = 15V
VGE = 12V
70 VGE = 10V
60 VGE = 8.0V
50
40
30
20
10
0
0123456
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 300µs
100
90 VGE = 18V
80 VGE = 15V
VGE = 12V
70 VGE = 10V
60 VGE = 8.0V
50
40
30
20
10
0
0123456
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 300µs
100
90 VGE = 18V
80 VGE = 15V
VGE = 12V
70 VGE = 10V
60 VGE = 8.0V
50
40
30
20
10
0
0123456
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 300µs
4
60
-40°C
50 25°C
150°C
40
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
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Page 4
Part Number GB15B60KD
Manufactur International Rectifier
Description Search -----> IRGB15B60KD
Total Page 15 Pages
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