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www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability SGB02N120 SGD02N120 C G E P-TO-252-3-1 (D-PAK) (TO-252AA) P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP02N120 SGB02N120 SGD02N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 °C 1) VCE 1200V IC 2A Eoff 0.11mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) TO-252AA(DPAK) Ordering Code Q67040-S4270 Q67040-S4271 Q67040-S4269 Symbol VCE IC Value 1200 6.2 2.8 Unit V A ICpul s VGE EAS tSC Ptot 9.6 9.6 ±20 10 10 62 V mJ µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 Power Semiconductors www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB 1) SGB02N120 SGD02N120 Max. Value Unit Symbol Conditions RthJC RthJA RthJA TO-220AB TO-263AB(D2PAK) 2.0 62 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 1 00 µA VCE(sat) V G E = 15 V , I C = 2 A T j =2 5 °C T j =1 5 0° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 10 0 µA , V C E = V G E V C E = 12 0 0V , V G E = 0V T j =2 5 °C T j =1 5 0° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 1200 2.5 3 typ. 3.1 3.7 4 1.5 205 20 12 11 7 24 max. 3.6 4.3 5 Unit V µA 25 100 100 250 25 14 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 2 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =2 A V G E = 15 V T O - 22 0A B V G E = 15 V ,t S C ≤ 10 µs 10 0 V≤ V C C ≤ 12 0 0 V, T j ≤ 15 0° C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 1) 2 Power Semiconductors 2 Jul-02 www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 °C , V C C = 80 0 V, I C = 2 A, V G E = 15 V /0 V , R G = 91 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. Symbol Conditions SGB02N120 SGD02N120 Value min. typ. 23 16 260 61 0.16 0.06 0.22 max. 30 21 340 80 0.21 0.08 0.29 mJ Unit ns Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0° C V C C = 80 0 V, I C = 2 A, V G E = 15 V /0 V , R G = 91 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 26 14 290 85 0.27 0.11 0.38 31 17 350 102 0.33 0.15 0.48 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Jul-02 www.DataSheet4U.com www.DataSheet4U.com SGP02N120, SGB02N120 SGD02N120 tp=10µs 12A Ic 10A 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 8A TC=80°C 6A TC=110°C 4A 50µs 1A 150µs 500µs 0.1A 20ms DC 2A Ic 0.01A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 91Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 7A 60W 6A 50W 5A 4A 3A 2A 1A 0A 25°C 40W 30W 20W 10W 0W 25°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50°C 75°C 100°C 125°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) Power Semiconductors 4 Jul-02 www.DataSheet4U.com www.DataSheet4U.com SGP02N120, 7A 6A 5A 4A 3A 2A 1A 0A 0V 7A 6A 5A 4A 3A 2A 1A 0A 0V SGB02N120 SGD02N120 IC, COLLECTOR CURRENT 1V 2V 3V 4V 5V 6V 7V IC, COLLECTOR CURRENT VGE=17V 15V 13V 11V 9V 7V VGE=17V 15V 13V 11V 9V 7V 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 6A 5A 4A 3A 2A 1A 0A 3V Tj=+150°C Tj=+25°C Tj=-40°C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 7A 6V 5V IC=4A 4V IC=2A 3V IC=1A 2V IC, COLLECTOR CURRENT 1V 5V 7V 9V 11V 0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Jul-02 www.DataSheet4U.com www.DataSheet4U.com SGP02N120, SGB02N120 SGD02N120 td(off) td(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES tf 100ns tf td(on) tr td(on) tr 10ns 0A 2A 4A 6A 8A 10ns 0Ω 50Ω 100Ω 150Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1 Ω, dynamic test circuit in Fig.E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E) 6V td(off) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5V max. t, SWITCHING TIMES 100ns 4V tf 3V typ. td(on) 2V min. 1V tr 10ns -50°C 0°C 50°C 100°C 150°C 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1Ω, dynamic test circuit in Fig.E) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) Power Semiconductors 6 Jul-02 www.DataSheet4U.com www.DataSheet4U.com SGP02N120, 2.0mJ *) Eon and Ets include losses due to diode recovery. SGB02N120 SGD02N120 0.5mJ Ets* *) Eon and Ets include losses due to diode recovery. E, SWITCHING ENERGY LOSSES 1.5mJ E, SWITCHING ENERGY LOSSES 0.4mJ Ets* 0.3mJ 1.0mJ Eon* Eon* 0.2mJ 0.5mJ Eoff 0.1mJ Eoff 0.0mJ 0A 2A 4A 6A 8A 0.0mJ 0Ω 50Ω 100Ω 150Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E ) 0.4mJ *) Eon and Ets include losses due to diode recovery. ZthJC, TRANSIENT THERMAL IMPEDANCE Ets* D=0.5 10 K/W 0.2 0.1 0.05 10 K/W 0.02 0.01 R1 R2 -1 0 E, SWITCHING ENERGY LOSSES 0.3mJ Eon* 0.2mJ R,(K/W) 0.66735 0.70472 0.62778 τ, (s)= 0.04691 0.00388 0.00041 0.1mJ Eoff 10 K/W single pulse C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -2 0.0mJ -50°C 0°C 50°C 100°C 150°C 1µs 10µs 100µs 1ms 10ms 100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1Ω, dynamic test circuit in Fig.E ) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 7 Jul-02 www.DataSheet4U.com www.DataSheet4U.com SGP02N120, 20V SGB02N120 SGD02N120 Ciss VGE, GATE-EMITTER VOLTAGE 15V C, CAPACITANCE 100pF 10V UCE=960V 5V Coss 0V 0nC 10pF 0V Crss 10V 20V 30V 5nC 10nC 15n QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 30µs 40A tsc, SHORT CIRCUIT WITHSTAND TIME 25µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 11V 12V 13V 14V 15V 30A 20µs 15µs 20A 10µs 10A 5µs 0µs 10V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) Power Semiconductors 8 Jul-02 www.DataSheet4U.com www.D