NPN epitaxial planar transistor

ISSUED DATE :2004/11/18 REVISED DATE : G9018 Description NPN EPITAXIAL PLANAR T RANSISTOR The G9018 is designed for use in AM/FM amplifier and local oscillator of FM/VHF tuner. Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature www.DataSheet4U.com Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 30 15 5 50 400 Unit Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE fT Cob at Ta = 25 : Min. 30 15 5 39 700 Typ. 1100 1.3 Max. 50 0.5 198 1.7 MHz pF Unit V V V nA V IC=100uA , IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=12V, IE=0 IC=10mA, IB=1mA VCE=5V, IC=1mA VCE=5V, IC=5mA VCB=10V, IE=0 * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank hFE E 39 - 60 F 54 - 80 G 72 - 108 H 97 - 146 I 132 - 198 1/2 ISSUED DATE :2004/11/18 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2