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International Rectifier
International Rectifier

G4PH40UD2-E Datasheet

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G4PH40UD2-E Datasheet Preview


PD - 96781
IRG4PH40UD2-E
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast IGBT optimized for high operating
frequencies up to 200kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast
ultra-soft-recovery anti-parallel diode for use in
resonant circuits
• Industry standard TO-247AD package with
extended leads
Benefits
• Higher switching frequency capability than
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less / no snubbing
Applications
• Induction cooking systems
• Microwave Ovens
• Resonant Circuits
TO-247AD
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
www.DataSheet4UIC.Mcom
ILM
Continuous Collector Current
ÙPulse Collector Current
dClamped Inductive Load current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Max.
1200
41
21
82
82
10
40
±20
160
65
-55 to +150
y y300 (0.063 in. (1.6mm) from case)
10 lbf in (1.1N m)
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.77
2.5
–––
40
–––
Units
°C/W
g (oz.)
www.irf.com
1
9/17/03
Page 1

IRG4PH40UD2-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
1200 — — V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
18 — — V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.43 — V/°C VGE = 0V, IC = 1mA
— 2.43 3.1 V IC = 21A
VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.97 —
IC = 41A
See Fig.2, 5
— 2.47 —
IC = 21A, TJ = 150°C
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
fForward Transconductance
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
16 24 — S VCE = 100V, IC = 21A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 1200V
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 3.4 3.8 V IF = 10A See Fig.13
— 3.3 3.7
IF = 10A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on)
— 100 150
IC = 21A
Qge Gate-to-Emitter Charge (turn-on)
— 18 24 nC VCC = 400V
See Fig.8
Qgc
Gate-to-Collector Charge (turn-on)
— 34 50
VGE = 15V
td(on)
Turn-On delay time
— 22 —
tr
td(off)
Rise time
Turn-Off delay time
— 26 — ns IC = 21A, VCC = 800V
— 100 140
VGE = 15V, RG = 10
tf Fall time
— 200 300
Energy losses include "tail" and
Eon Turn-On Switching Loss
— 1950 —
diode reverse recovery.
Eoff Turn-Off Switching Loss
— 1710 — µJ See Fig. 9, 10, 11, 18
Etot Total Switching Loss
— 3660 4490
www.DataSheet4Utd.(coon)m
tr
Turn-On delay time
Rise time
— 21 —
TJ = 150°C, See Fig. 9, 10, 11, 18
— 25 — ns IC = 21A, VCC = 800V
td(off)
Turn-Off delay time
— 220 —
VGE = 15V, RG = 10
tf Fall time
— 380 —
Energy losses include "tail" and
ETS Total Switching Loss
— 6220 — µJ diode reverse recovery.
LE Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies Input Capacitance
— 2100 —
VGE = 0V
Coes Output Capacitance
— 99 — pF VCC = 30V, See Fig.7
Cres Reverse Transfer Capacitance
— 12 —
f = 1.0MHz
trr Diode Reverse Recovery Time
— 50 76 ns TJ=25°C
See Fig
— 72 110
TJ=125°C 14 IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
— 4.4 7.0 A TJ=25°C
See Fig
Qrr Diode Reverse Recovery Charge
— 5.9 8.8
TJ=125°C
— 130 200 nC TJ=25°C
15
See Fig
VR = 200V
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
— 250 380
TJ=125°C
— 210 — A/µs TJ=25°C
16
See Fig
di/dt = 200A/µs
During tb
— 180 —
TJ=125°C
17
2 www.irf.com
Page 2

IRG4PH40UD2-E
50
45
40
35
30
25
20
15
10
5
0
0.1
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
1
f , Frequency ( kHz )
10
Square wave:
60% of rated
voltage
I
Ideal diodes
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
www.DataSheet4U.com
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20µs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5µs PULSE WIDTH
1
5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
Page 3
Part Number G4PH40UD2-E
Manufactur International Rectifier
Description Search -----> IRG4PH40UD2-E
Total Page 10 Pages
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