SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - FEBRUARY 1999 FZT491A PARTMARKING DETAIL – FZT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb =25°C www.DataSheet4U.com SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg VALUE 40 40 5 2 1 200 2 -55 to +150 UNIT V V V A A mA W °C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Breakdown Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current ICBO IEBO MIN. 40 40 5 100 100 100 0.3 0.5 1.1 1.0 300 300 200 35 150 10 TYP. MAX. UNIT V V V nA nA nA V V V V CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=30V VEB=4V VCES=30V IC=500mA, IB =50mA* IC=1A, IB =100mA* IC=1A, IB=100mA* IC =1A, VCE =5V* IC=1mA, VCE =5V IC =500mA, VCE =5V* IC =1A, VCE =5V* IC = 2A, VCE =5V* MHz pF IC=50mA, VCE=10V, f =100MHz VCB=10V, f=1MHz Collector-Emitter Cut-Off ICES Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current VCE(sat) VBE(sat) VBE(on) hFE 900 Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. For typical characteristics graphs see FMMT491A datasheet